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Technical content

Features

Applications

  • High short circuit capability , self limiting short circuit current
  • VCE(sat) with positive temperature coefficient
  • Fast switc hing and short tail current
  • Free wheeling diodes with f ast and soft reverse recovery
  • Lo w switching losses Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit IGBT VCES Collector - Emitter Voltage TJ=25°C 600 V VGES Gate - Emitter Voltage ±20 V IC DC Collector Current TC=25°C 125 A TC=70°C 100 A ICM Repetitive Peak Collector Current tp=1ms 200 A Ptot Power Dissipation Per IGBT 330 W Diode V RRM Repetitive Reverse Voltage TJ=25°C 600 V IF(AV) Average Forward Current TC=25°C 125 A TC=70°C 100 A IFRM Repetitive Peak Forward Current tp=1ms 200 A I2t TJ =125°C, t=10ms, VR=0V 1000 A2s Module Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit TJ max Max. Junction Temperature 175 °C TJ op Operating Temperature -40 150 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage AC, t=1min 3000 V CTI Comparative Tracking Index 350 Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M5) 2.5 5 N·m Weight 160 g
  • High frequency switching application
  • Medical applications
  • Motion/ser vo control
  • UPS systems Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. ®RoHS Agency Approvals AGENCY AGENCY FILE NUMBER E71639

©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 MG06100S-BN4MM 600V 100A IGBT Module Symbol Parameters Test Conditions Min Typ Max Unit IGBT VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=1 .6mA 4.9 5.8 6.5 V VCE(sat) Collector - Emitter Saturation Voltage IC=100A, VGE=15V , TJ=25°C 1 .45 1. 9 V IC=100A, VGE=15V , TJ=125°C 1. 6 V ICES Collector Leakage Current VCE=600V , VGE=0V , TJ=25°C 1 mA VCE=600V , VGE=0V , TJ=125°C 5 mA IGES Gate Leakage Current VCE=0V ,VGE=±15V , TJ=125°C -400 400 nA RGint Integrated Gate Resistor 2 Ω Qge Gate Charge VCC=300V , IC=100A , VGE=±15V 1. 1 μC Cies Input Capacitance VCE=25V , VGE=0V , f =1MHz 6.2 nF Cres Reverse Transfer Capacitance 0.19 nF td(on) Turn - on Delay Time VCC=300V IC=100A RG =3.3Ω VGE=±15V Inductive Load TJ =25°C 70 ns TJ =125°C 80 ns tr Rise Time TJ =25°C 20 ns TJ =125°C 20 ns td(off) Turn - off Delay Time TJ =25°C 260 ns TJ =125°C 290 ns tf Fall Time TJ =25°C 70 ns TJ =125°C 70 ns Eon Turn - on Energy TJ =25°C 0.3 mJ TJ =125°C 0.7 mJ Eoff Turn - off Energy TJ =25°C 2.5 mJ TJ =125°C 3.35 mJ ISC Short Circuit Current tpsc≤6μS , VGE=15V; TJ=125°C,VCC=360V 500 A RthJC Junction-to-Case Thermal Resistance (Per IGBT) 0.45 K/W Diode VF Forward Voltage IF=100A , VGE=0V , TJ =25°C 1 .55 1 .95 V IF=100A , VGE=0V , TJ =125°C 1 .50 V IRRM Max. Reverse Recovery Current IF=100A , VR=300V diF/dt=-5100A/μs TJ =125°C 150 A Qrr Reverse Recovery Charge 8.0 μC Erec Reverse Recovery Energy 2.25 mJ RthJC Junction-to-Case Thermal Resistance (Per Diode) 0.75 K/W Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)

©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 MG06100S-BN4MM 600V 100A IGBT Module Packing Options Part Number Marking Weight Packing Mode M.O.Q MG06100S-BN4MM MG06100S-BN4MM 160g Bulk Pack 100 Part Numbering System Part Marking System PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT CIRCUIT TYPE WAFER TYPE PACKAGE TYPE MG06100 S - BN4 MM VOLTAGE RATING CURRENT RATING ASSEMBLY SITE 06: 600V 100: 100A 2x(IGBT+FWD) Dimensions-Package S MG06100S-BN4MM LOT NUMBER Space reserved for QR code Circuit Diagram