MFS300A-12 SHUNYE | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 5
Technical content
■特征 Features 低反向漏电流 Low reverse leakage current 高耐浪涌电流能力 High surge current capability 符合 RoHS 指令 2011/65/EU Compliant to RoHS directive 2011/65/EU ■应用范围 Applications 工业电源 Industrial power supply 工业自动化设备 Industrial power supply PWM 逆变器直流电源 DC supply for PWM inverter 直流电源设备用电源 Supplies for DC power equipment ■机械参数 Mechanical Data 本体: Case : MFS 极性:极性符号铸在管体上 Polarity: Polarity symbols being marked on body 安装扭矩:22.0 kgf.cm Mounting torque: 22.0 kgf.cm max 重量:约 150 克 Weight : About 150 grams ■最大额定值 Maximum Ratings @ Ta = 25℃ unless otherwise noted 关键参数 KEY PARAMETERS 参数 PARAMETER 数值 VALUE 单位 UNIT IF(AV) 300 A VRRM 1200 V IFSM 1000 A Package MFS MFS MFS300A/12 RECTIFIER MODULE Reverse Voltage - 1200 Volts Forward Current - 300.0 Ampere www.shunyegroup.com.cn mail to: sales@shunyegroup.com.cn G11 OUTLINE DRAWING & CIRCUIT DIAGRAM
IFM=300A 1.1 V Rth(j-c) Junction to heatsink Single side cooled 0.75 °C /W Viso Isolation voltage 50Hz,R.M.S,t=1min, I iso:1mA(max) 2500 V Terminal connection torque N.m Fm Mounting torque(M5) 1.5 N.m Tstg Stored temperature -40 125 °C Wt Weight 160 g Outline VTM Peak on-state voltage ITM= 300A 25 1.5 V dv/dt Critical rate of rise of off-state voltage VDM=67%V DRM 125 500 V/μs di/dt Critical rate of rise of on-state current From 67%V DRM to 120A, Gate source 1.5A tr ≤0.5μs Repetitive 125 50 A/μ s IGT Gate trigger current 30 60 mA VGT Gate trigger voltage 0.7 1.5 V IH Holding current VA=12V, IA=1A 25 30 50 mA VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(°C) Min Type Max UNIT IT(AV) Mean on-state current 180° half sine wave 50Hz Single side cooled,Tc=85°C 125 300 A IT(RMS) RMS on-state current Single side cooled,Tc=85°C 125 95 A VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&V RRM tp=10ms VDsM&V RsM= VDRM&V RRM+200V respectively 125 600 1600 V IDRM IRRM Repetitive peak current at VDRM at VRRM 125 8 mA ITSM Surge on-state current 0.6 KA I2t I2T for fusing coordination 10ms half sine wave VR=60%V RRM 125
5.10 A2s*103
VTO Threshold voltage 0.85 V rT On-state slop resistance 125 5.57 mΩ MFS300A/12 www.shunyegroup.com.cn mail to: sales@shunyegroup.com.cn
Fig.1 Fig.2 Fig.5 Fig.6 Fig.4 Fig.3 0.65 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.001 0.01 0.1 1 10 time,S Transient thermal impedance,°C/W MTC40 0.8 1.2 1.6 2.4 2.8 3.2 3.6 10 100 1000 Instantaneous on-state currant,amperes Instantaneous on-state voltage,volts MTC40 0 10 20 30 40 50 Mean on-state current,amperes Max on-state dissipation,watts 120 180 MTC40 0 10 20 30 40 50 60 Mean on-state current,amperes Max.on-state dissipation,watts 120 180 270 DC 100 120 140 0 20 40 60 80 Mean on-state current,amperes Case temperature,°C 30 60 90 120 180 MTC40 100 120 140 0 30 60 90 120 Mean on-state current,amperes Case temperure,°C D270180120906030 M ax. junction To case Ther m ai Im pedance Vs.Time 360 Conduction Angle Max. Powe r Dissipation Vs.Mean On-state Current Max. Power Dissipation Vs.Mean On-state Current Conduction Angle 1800 Max. case Temperature Vs.Mean On-state Current Conduction Angle 1800 Max. case Temperature Vs.Mean On-state Current 360 Conduction Angle Peak On-state Voltage Vs.Peak On-state Current Tj=125°C MFS300A/12 www.shunyegroup.com.cn mail to: sales@shunyegroup.com.cn
Fig.7 Fig.8 Fig.10 Fig.9 1.00 0.2 0.4 0.6 0.8 1.2 1 10 100 Cycles at 50Hz Total peak half-sine surge current,kA Surge Current Vs.Cycles 5.1 1.5 2.5 3.5 4.5 5.5 1 10 Time,m.seconds Maximum I2t(Kamps2,secs) I2t Vs.Time Gate current,IGT mA0 Gate voltage,VGT V 125癈 25癈 -10癈 -30癈 Gate Trigger Zone at variestemperature 0 2 4 6 8 10 12 14 Gate current,IGT A Gate voltage,VGT V max. min. PGM=50W (100 s pulse) PG2W Gate characteristic at 25 junction t em p er a tu re MFS300A/12 www.shunyegroup.com.cn mail to: sales@shunyegroup.com.cn