MFS112 MICROSEMI | Alldatasheet
Document overview
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Technical content
L Dim. Inches Millimeter LA T A .081 087 2.06 2.21 B 160 180 4.06 457 c 130 155 3.30 3.94 8 D075 095 1.90 2.41 E .270 .290 6.86 7.37 — oh F 1015 "030 381 762 iL DO-215AA i E Working Repetitive . Microsemi Peak Reverse Peak Reverse ¢ Fast Recovery Rectifier Catalog Number Voltage Voltage Surface Mount Package westt9 200¥ 200 . VRRM 1200 to 1600 Volts MFS114 1400V 1400V @ ©RR 500nS Max. MFSII6 '600v 1600v © 175°C Junction Temperature
Electrical Characteristics
Average forward current | F(AV) 1.0 Amps TL_= 102°C, Square wave, ROL = 20°C/W Maximum surge current | FSM 25 Amps 8.3ms, half sine, TJ = 175°C Max peak forward voltage VFM 1.6 Volts IPM = 1A:TJ = 25°C Max peak reverse current IRM 1.5 mA VRRM, TJ = 125°C Max peak reverse current RM 10 wa VRRM, TJ = 25°C Max reverse recovery time tRR 500 ns 1/24, 1A, 1/4A, Ty = 25°C Typical junction capacitance Cy 6.5 pF TW = 25°C,VR = 10V *Pulse test: Pulse width 300 usec, Duty cycle 2% Thermal and Thermal Characteristics Storage temperature range Tst¢ -55°C to 175°C Operating junction temp range Ty -55°C to 175°C Maximum thermal resistance Rew 20°C/W Junction to lead Weight .0047 ounces (.013 grams) typical 5-16-01 Rev. 1 a ___ COLORADO _ 800 Hoyt Street Broomfield, CO. 80020 Microsemi 6 FAX: (303) 466-3775 www.microsemi.com
Typical Forward Characteristics Typical Junction Capacitance 100 100 Ee go Fo FRR ee a 80 Fe Cy a A OS ao A Ce ea & 99 SSS TUM MOTTTIIGMEGTTil j Sg occ TIT TTT 5 = =e eee = 6 a A A
20 Bp 8 8 rer eee secon
| L & 4, Pt Pi Pe ZK | ° a a ee a ee s ,/ EOI Tn Ceri so 8 A 5 Fe) 7 AA 1 | 0.1 05 1.0 5.0 10 50 100 SERnF=7¢/50008 8 20 sed A\\_/ 2gc ni [| a A sSos-tf rr vir ree 8 8 3 oer 2 ~r_T PAT y terre S o4 Pett ita yt yy Ty TY & LETT PUTT TTT TTT got tT TTT TTT 5 0.2 i =o L 0 04 08 12 16 20 24 28 Instantaneous Forward Voltage — Volts Figure 2 Typical Reverse Characteristics 1000 pp a) a a co 2) a £ = = SS SS SS 8 _——— a a a SS a
8 SS SS
@ (9) Ee Soo ed Reverse Voltage — Volts 5-16-01 Rev. 1