MFE3006 MOTOROLA | Alldatasheet

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MFE3006 (suicon) thru N-CHANNEL N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED DUAL GATE MOS FIELD-EFFECT TRANSISTORS MOS FIELD-EFFECT TRANSISTORS - +. depletion mode (Type B) dual gate transistors designed for VHF TYPEB amplifier and mixer applications. These types are specified as follows: MFE3006 — RF Amplifier @'100 MHz MFE3007 — RF Amplifier @ 200 MHz MFE3008 — Mixer @ 100 and 200 MHz © Silicon Nitride Passivation for Excellent Long Term Stebility © High Common-Source Power Gain — MFE3006: Gps = 20 dB (Min) @ f = 100 MHz MFE3007: Gps = 18 dB (Min) @ f = 200 MHz © High Common-Source Conversion Gain — MFE3008: Gps = 14 dB (Min) @ f= 100 MHz Gps= 10 dB (Min) @ f = 200 MHz © Low Reverse Transfer Capacitance — Crss = 0.02 pF (Typ) @ Vpg = 15 Vde im ia eG be i { MAXIMUM RATINGS a i PLANE [ Gate 1 Source Vortage Vaiss vee 2 GATE? jp © source [ Drain Current tg sane SUBSTRATE “ | ‘Total Device Dissipation @ Ta = 25°C 300 mW sal ht | Derate above 25°C 20 m/c ys [-sstori7s [oc | “ 2 | [Stem tenewenre nine | tag ators |e SD [mic cimTERS| — INCHES) | HANDLING PRECAUTIONS: jo] 041 | 053 1 ooie | 0.02 | WC fides rire Sigh cee. Hny on derapd eaerer see bby the accumulation of excess static charge. Avoid possible damage to the devices while [at as [ir [aoe [one] ‘handling, testing, or in actual operation, by following the procedures outlined below: Eepertar rts maf Oe | | 1. To avoid the build-up of static charge, the leads of the devices should remsin pe fie fF osoo f= shorted togethor with a metal ring excapt when being tested or used. He SR tee eras —| 2 Avoid unnecessary handling. Pick up devices by the case instead of the leads. aT | 3. Do not insert or remove devices from circuits with the power on because transient Cet Til — 10060} voltages may cause permanent demage to the devices. ‘ALL JEDEG dimensions and nates apply | case 2003 To72

MFE3006 thru MFE3008 (continued) TEST CIRCUITS f= 100 MHz f= 200 MHz FIGURE 1 — NOISE AND POWER GAIN FIGURE 4 — NOISE AND POWER GAIN ‘exTeRWAL 7 an EXTER! s- LI 7 Smet. NFO Od , SNE a yMFEI0O7 gag O uy t oO eS “ee. Fro son. Fy ‘ 3 TGA -Fnom son oe se Ga au a tam] aE som ems Toei nom so yoo ont a ee ccntastan ar sencaton ae JP ‘OR NOISE 7a) | l= Ps ‘OR NOISE. ee) eh 0 miiace Fe) 1 Sere ‘ous | = 2 FE, 7” t 25 |e i: ior a atk ak 18k m0 ak ak Lax: 200: T oat eer = er = = F yes yi fem SS 300 ‘Magic tv po deme osw ohms ‘Al capcinca wt 9 acy tm ae 1,03, CA: Jobanson Type 2951 or equivalent C1, C3, CA: Johanson Type 2951 ot aquivalent Cx Caan ype € oro Cx etna Type 308 eet Li: 6 Tome #16 AWG Wire (Internel diaenater 5/16", Length 5/8") Li: 4 Turns £16 AWG Wire (Internal diameter 1/4", Longth 3/4”) ‘U2; 5 Turns #18 AWG Wire (Intsinel dismeter 3/8". Length 6/8") LZ: 5 Turns #16 AWG Wire (totermal diameter 1/4", Length 3/6") dy 62,3 he antag te 1m Er amen jc, on 8 oe Sletten 2 ta ies cieseuaien poo own a, sang pow Peerorerrectintryrs neat eae" me Sa einee-t005 ‘ease 800 FIGURE 2 — GAIN REDUCTION FIGURE 5 — GAIN REDUCTION EXTERNAL, _ ‘SHIELO-"~ Tures00s 4, LT wees aah vamanue 180 gy ap OM og vans. a oy tan Se a a ‘eng - n vate tH) 3 eS volte oP Teh kor T eoee Las ee ute Tel £4 £1 dare 7 nrc a) From son 409 ‘0 SOHAL 103 om sent eH fee onenaton (i estenaon ai ue Aa ake Suk Lid nase Fe aosm | TEL t ounce fas T Yoo SOURCE t von = > + = busy ¥ = = = ov scape nae pa ety sn ah. ‘Atacama on pric yen sm Eker reapoemtins iene) 1.8, 4 han Ty 21 o eat Sons Type-S i arose 2 Sn 1p 308 at Ui: § Yom 18 Ae an nd Sew anh 77 Ui: Stars fi¢ AW Weel deter 14° Lang 3°) L2: 5 Tuna $16 AWG Wire (internal diameter 3/6", Length 5/8") L2: 5 Tums #16 AWG Wire (internal diameter 1/4", Leageh 3/4") Ont eid "20 ir 20 08 neal tate sie 8-30 08 Games veimre-s0et FIGURE 3 — CONVERSION POWER GAIN FIGURE 6 — CONVERSION POWER GAIN ory ovo Wk | RFC! +18v yoo TO0Me stat

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MFE3006 thru MFE3008 (continued) COMMON-SOURCE ADMITTANCE PARAMETERS (Vpg = 15 Vde, VGas = 4.0 Vde, Ip = 10 mAdc) FIGURE 13 — INPUT ADMITTANCE FIGURE 14 — REVERSE TRANSFER ADMITTANCE

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0 70 100 208 00 ‘400 $00 0 nn 100 200 300 ‘400500 f, FREQUENCY (MHz) f, FREQUENCY (MHz)