MFE212 MOTOROLA | Alldatasheet
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a —’ SS _ N-CHANNEL DUAL-GATE . SILICON-NITRIDE PASSIVATED MFE21 1 . MOS FIELD-EFFECT TRANSISTORS + -high Yfs depletion mode dual gate transistors designed for VHF - MFE212 i ‘amplifier and mixer applications. : © MFE211 — VHF Amplifier/IF Amplifier ° CASE 20-03, STYLE 9 : . MFE212 — VHF Mixer TO-72 (TO-206AF) 5 ‘© High Forward Transfer Admittance — |Yfs| = 17-40 mmhos i © Low Reverse Transfer Capacitance — Crs = 0.03 pF (Max) © Diode Protected Gates 2 Casi Gate 2 Drain-Source Voitege [osx [20 [vee | | off 5 Vo Goto Current ‘ot [sg [om | DUAL-GATE 162 210 MOSFETs [Brain Current— Continuous | to |_ 80 | made | Total Power Dissipation @ Ta = 26°C 360 mW _ Derate above 25°C 24 mwWre N-CHANNEL — DEPLETION Total Power Dissipation @ Tc = 26°C ‘Watt Derate above 25°C mwrc Tiorago Channel Temperature Range | Tag [esto +20] c_| Junction Temperature Range =é5to+175| c__—| Lead Temperature, 1/16" From Seated TL c . Surface for 10 Seconds: ELECTRICAL CHARACTERISTICS (Ta = 26°C unless otherwise noted.) [Characteristic Symbol [in Tox [nit | OFF CHARACTERISTICS Drain-Source Breakdown Voltage Vienyosx lp = 10 zAde, Veis = VG2s = ~4.0 Vde) Gate 1— Source Breakdown Voltage(1) V(gR)G1so Vie (igs = #10 mAdo, Va2s = Vos = 0) Gate 2 — Source Breakdown Voltage(1) V(BR)G2SO 260 Vde (ig2 = #10 mAdo, Va1g = Vos = 0) Gate 1 to Source Cutoff Voltage MFE211 -55 Vde (ps = 15 Vde, Vg2g = 4,0 Vde, Ip = 20 wAde) MFE212, -40 Gate 2 to Source Cutoff Voltage Mre211 | Ve2sioty Vae ps = 18 Vdo, Vais = 0, Ip = 20 wAdc) MFE212 Gis = +5.0 Vi 1G2s = Vos = (eis = ~5.0 Vac, Vgzs = Vos = 0, Ta = 150°C) Ade Gate 2 Leakage Current ‘ess (VG2g = *5.0 Vde, Vais = Vps = 0) nade (Ves = —5.0 Vde, Vgis = Vos = 0, TA = 180°C) pAde ON CHARACTERISTICS ‘Zaro-Gate Voltage Drain Current(2) (Vps = 15 Vde, Vets = 0, Va2g = 4.0 Vde) SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance(3) (ps = 15 Vdc, Vgag = 4.0 Vdc, Va1g = 0,f = 1.0 kH2) Reverse Transfer Capacitance Wps = 15 Vde, Vg2g = 4.0 Vdo, Ip = 10 mAde, f = 1.0 MHz) ‘continued ee MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 4435 | »
Gan Control Gate-Supply Voltagela).
- Pulse Test: Pulse Width = 300 us, Duty Cycle = 2.0%.
- This parameter must bo measured with bias voltages applied for loss than § seconds to avold overheating The signal is applied to gate 1 with gate 2 at
4, &Gpg i defined as the change in Gpe from the value ot Veg = 7.0 volts (MFE2t1).
- Power Gain Conversion, Amplitude a Inut from local osciator fs adjusted for maximum Ge.
1 Cc @ Loan
Figure 2. 45 MHz Power Gain and Noise Figure Test Circuit for MFE211