MFE211

MFE211 DIGITRON | Alldatasheet

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phone +1.908.245-7200 MFE211 – MFE212 N-CHAN NEL DUAL GATE SILICON NITRIDE P A S S I V A T E D MOS FIELD EFFECT TRANSISTORS MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSX 20 Vdc Drain Gate Voltage VDG1 VDG2

35 Vdc

±10 ±10 mAdc Drain Current – Continuous ID 50 mAdc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 360 2.4 mW mW/°C Total Power Dissipation @ TC = 25°C Derate above 25°C PD 1.2 8.0 Watt mW/°C Storage Channel Temperature Range Tstg -65 to +200 °C Junction Temperature Range TJ -65 to +175 °C Lead Temperature, 1/16” from Seated Surface for 10 Seconds TL 300 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Drain Source Breakdown Voltage D = 10 µAdc, VG1S = VG2S = -4.0 Vdc) V(BR)DSX 20 - Vdc Gate 1 – Source Breakdown Voltage (1) (IG1 = ±10 mAdc, VG2S = VDS = 0) V(BR)G1SO ±6.0 - Vdc Gate 2 – Source Breakdown Voltage (1) (IG2 = ±10 mAdc, VG1S = VDS = 0) V(BR)G2SO ±6.0 - Vdc Gate 1 to Source Cutoff Voltage DS = 15 Vdc, VG2S = 4.0 Vdc, ID = 20 µAdc) MFE211 MFE212 V G1S(off) -0.5 -0.5 -5.5 -4.0 Vdc Gate 2 to Source Cutoff Voltage DS = 15 Vdc, VG1S = 0, ID = 20 µAdc) MFE211 MFE212 V G2S(off) -0.2 -0.2 -2.5 -4.0 Vdc Gate 1 Leakage Current G1S = ±5.0 Vdc, VG2S = VDS = 0) (VG1S = -5.0 Vdc, VG2S = VDS = 0, TA = 150°C) IG1SS ±10 -10 mAdc µAdc Gate 2 Leakage Current G2S = ±5.0 Vdc, VG1S = VDS = 0) (VG2S = -5.0 Vdc, VG1S = VDS = 0, TA = 150°C) IG2SS ±10 -10 nAdc µAdc ON CHARACTERISTICS Zero-Gate Voltage Drain Current (2) (VDS = 15 Vdc, VG1S = 0, VG2S = 4.0 Vdc) IDSS 6.0 40 mAdc SMALL SIGNAL CHARACTERISTICS Forward Transfer Admittance (3) (VDS = 15 Vdc, VG2S = 4.0 Vdc, VG1S = 0, f = 1.0 kHz) ⎪Yfs⎪ 17 40 mmhos Reverse Transfer Capacitance (VDS = 15 Vdc, VG2S = 4.0 Vdc, ID = 10 mAdc, f = 1.0 MHz) Crss 0.005 0.05 pF FUNCTIONAL CHARACTERISTICS Noise Figure DD = 18 Vdc, VGG = 7.0 Vdc, f = 200 MHz) (VDD = 24 Vdc, VGG = 6.0 Vdc, f = 45 MHz) MFE211 MFE212 NF 3.5 4.0 dB Common Source Power Gain DD = 18 Vdc, VGG = 7.0 Vdc, f = 200 MHz) (VDD = 18 Vdc, VGG = 6.0 Vdc, f = 45 MHz) (VDD = 18 Vdc, fLO = 245 MHz, f RF = 200 MHz) MFE211 MFE211 MFE212 G ps Gc (5) dB sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20120705

phone +1.908.245-7200 MFE211 – MFE212 N-CHAN NEL DUAL GATE SILICON NITRIDE P A S S I V A T E D MOS FIELD EFFECT TRANSISTORS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Max Unit Bandwidth (VDD = 18 Vdc, VGG = 7.0 Vdc, f = 200 MHz) (VDD = 18 Vdc, fLO = 245 MHz, f RF = 200 MHz) (VDD = 18 Vdc, VGG = 6.0 Vdc, f = 45 MHz) MFE211 MFE212 MFE211 BW 5.0 4.0 3.5 7.0 6.0 MHz Gain Control Gate Supply Voltage (4) (VDD = 18 Vdc, ΔGps = -30 dB, f = 200 MHz) (VDD = 18 Vdc, ΔGps = -30 dB, f = 45 MHz) MFE211 MFE211 V GG(GC) -2.0 ±1.0 Vdc 1. All gate breakdown voltages are measured while the device is conducting rated gate current. This ensures that the gate voltage limiting network is functioning properly. 2. Pulse test: Pulse width = 300µs, duty cycle ≤ 2%. 3. This parameter must be measured with bias voltages applied for less than 5 seconds to avoid overheating. The signal is applied to gate 1 with gate 2 at ac ground. 4. Δ Gps is defined as the change in Gps from the value at VGG = 7.0 volts (MFE211). 5. Power Gain Conversion. Amplitude at input from local oscillator is adjusted for maximum GC. Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20120705

phone +1.908.245-7200 MFE211 – MFE212 N-CHAN NEL DUAL GATE SILICON NITRIDE P A S S I V A T E D MOS FIELD EFFECT TRANSISTORS sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20120705

phone +1.908.245-7200 MFE211 – MFE212 N-CHAN NEL DUAL GATE SILICON NITRIDE P A S S I V A T E D MOS FIELD EFFECT TRANSISTORS sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20120705

phone +1.908.245-7200 MFE211 – MFE212 N-CHAN NEL DUAL GATE SILICON NITRIDE P A S S I V A T E D MOS FIELD EFFECT TRANSISTORS TO-72 Inches Millimeters Dim Min Max Min Max A - 0.230 - 5.840 B - 0.195 - 4.950 C - 0.210 - 5.330 D - 0.021 - 0.530 E - 0.030 - 0.760 F - 0.019 - 0.480 G 0.100 BSC 2.540 BSC H - 0.046 - 1.170 J - 0.0480 - 1.220 K 0.500 - 12.700 - L 0.250 - 6.350 - M 45°C BSC 45°C BSC N 0.050 BSC 1.270 BSC P - 0.050 - 1.270 sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20120705