MFE201 MOTOROLA | Alldatasheet
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N-CHANNEL DUAL-GATE - . SILICON-NITRIDE PASSIVATED MFE201, MOS FIELD-EFFECT TRANSISTORS thru «+. depletion mode dual gate transistors designed for VHF amplifier and. tnixer applications. MFE203 © MFE201 — VHF Amplifier MFE202 — VHF Mixer CASE 20-03, STYLE 9 MFE203 — IF Amplifier TO-72 (TO-206AF) © Low Reverse Transfer Capacitance — Cres = 0.03 pF (Max) : 1 ‘© High Forward Transfer Admittance — Goto 2 Ovain lyfs| = 8-20 mmhos — MFE201, MFE202 = 7-15 mmhos — MFE203 ® Diode Protected Gates MAXIMUM RATINGS at 3 4 Gute 8 [ating Symbol [Value [Unit] “ve | Drain-Source Voltage | Vosx | 20 «| vide ‘| DUAL-GATE Drain-Gate Voltage Vde MOSFETs Voge jerome oearon #10 Drain Curent = Continuous [ip] 60] mace] Total Power Dissipation @ Ta = 25°C Derate above 25°C Total Power Dissipation @ Tc = 25°C ‘Watt Derate above 25°C mwrc Storage Channel Tarnpotatare Range “Junction Temperature Range Lead Temperature, 1/16" From Seated Th ed Surface for 10 Seconds ELECTRICAL CHARACTERISTICS (Ta = 26°C unless otherwise noted.) [tharecteristig vb [tiny Moe [Unit] OFF CHARACTERISTICS Drain-Source Breakdown Voltage ip = 10 zAde, Vg = 0, Vgis = Vazs = -5.0 Vde) Gate 1 — Source Breakdown Voltage(1) ViBR)GI: +60 Vde {igi = #10 mAde, Vogs = Vos = 0) Ged Gate 2— Source Breakdown Voltage(1) Vi(BRIG2SO 212 £30 Vdeo (ig2 = #10 mAdc, Vets = Vos = 0 gal Gate 1 to Source Cutoff Voltage Versi Vdc (ps = 15 Vde, Vaas = 4.0 Vdc, Ip = 20 Ade) ee Gate 2 to Source Cutoff Voltage vu 14 Wes ada ea = 2 pase cose [mae | ee oe : on eave ve 0) 04 nAdc = #80 Vas, Vos = Vos = 204 (VG28 = 60 Vée, VE9S = VBS. = 0, Ta = 1500) S nade = £60 Ve, Vis = Vos = + fo ves = -5.0 Vdo, ves = vos = 0, Ta = 150°C) =10 Ade ON CHARACTERISTICS aioe eve vee woe 0 Vdo) MFE201, MFE202 0g = 15 Vde, Varig = 0, VG2s = 40 Vde) 1 IS Gis Gas MFE203 SMALL-SIGNAL CHARACTERISTICS Forward renter Aanattencela ‘ Ot = 10 Ki = 18 Vde, Vezg ~ 4.0 Vde, Varg = 0,f = 1. os ae ae MFEZO1, MFE202 8.0 MFE203 7.0 Input Capacitance ‘Vos = 15 Vde, Vg2g = 4.0 Vde, Ip = Ings, f = 1.0 MHz) Output Capacitance - Wo: = 15 Vde, Vg2g = 4.0 Vde, Ip = Ings, f = 1.0 MHz) Roverse Transfer Capacitance Crea 0.008 {Vg = 15 Vdo, Vag = 4.0 Vdo, Ip = 10 mAdo, f = 1.0 MHz) OO MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 4-124
2, Pulse Test Pulse Width = 300 us, Duty Cyclo 2.0%. This poremeter must be meosured with bles voltages applied for less than 6 seconds to avoid overeating.
- Adee Ts datined as tho change In Gp fom the value at Vag = 7.0 volts (MFEZO1) and Vag ~ 60 vos (MFE20I-
Figure 1. 200 MHz Test Circuit Schematic
220 Mie (o> a 18 TURNS:
Figure 2. 200 MHz to 45 MHz Test Circuit Schematic
Figure 3. 45 MHz Test Circuit Schematic
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Figure 4. Drain Current versus Drain-to-Source Voltage [cure Oaaseeonns vonaey
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Figure 6. Small-Signal Common-Source Gate-One Figure 7. Small-Signal Common-Source Gate-One
Figure 8. Small-Signal Common-Source Gate-One Figure 9. Small-Signal Common-Source Gate-One
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Figure 10. Common-Source Power Gain and Spot Figure 11. Common-Source Power Gain and Spot