MFE140 MOTOROLA | Alldatasheet
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MOTOROLA SC {XSTRS/R FY Sb DE pose zes4 ggéebb? O I ; 6367254 MOTO! ROLA SC CXSTRS/R F) S6D 82667 ie) . : TH 2-28" \\ MFE140 CASE 20-03, STYLE 9 TO-72 (TO-206AF)
1 Drain
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7 MOSFET
Total Device Dissipation @ Ta = 25°C (Samees=e [oe | = [| FA AMPLIFIER ‘Operating and Storage Channel Tchannel: | —65to +175 c 7 _ : ELECTRICAL CHARACTERISTICS (Tq = 25°C unless otherwise noted.) ‘OFF CHARACTERISTICS Drain-Source Breakdown Voltage VipRIDSX ip = 10 wAdo, Vg = 0, Vat = —4.0 Vde, Vez = +40 Vde) Gate 1-Source Breakdown Voltage V(gR)G1SO ligt = #10 wAde, Va2g = 0) Gate ZSource Breakdown Voltage Vpenjazao r- | (igz = #10 Adc, Vozs = 0) Gate 1 Leakage Current Ie1ss Weis = #80 Vdc, Vazs = 0. Vos = 0) Gato 2 Leakage Current . Wa2s = #60 Vdc, Vos = 0, Vos = 0 Gate 1 to Source Cutoff Voltage Vers(ott) eal Woo Wps = 18 Vde, Voz = 4.0 Vde, Ip = 200 Ade) Gate 2 to Source Cutoff Voltage WVps = 18 Vee, Veis = 0, Ip ~ 200 ude) ! (ON CHARACTERISTICS. Zero-Gate-Voltage Drain Current 30 Wos = 15 Ve, Ve2s = 0. Va2s = 40 Vde) SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance (Gate 1 connected to Drain) Weel 10 Wps = 15 Vde, Ve2g = 4.0 Vdc, Ip = 10 mAdo, f = 1.0 kHe) Input Capacitance Ciss (ps = 15 Vdc, Vaas = 4.0 Vd, Ip = Ipss f= 1.0 MH2) Reverse Transfer Capacitance Cres Wos = 16 Vde, Ve2g = 4.0 Vde, Ip = Iss. = 1.0 MH2) ‘Output Capacitance Coss 40 Wps = 15 Vde, Ve2g = 4.0 Vdc, Ip = Ings, = 1.0 MHz) FUNCTIONAL CHARACTERISTICS ‘Noise Figure (Figure 8) (See Test Circuit n Figure 11) ‘Common Source Power Gain (Figure 7) (See Test Circuit in Figure 11) Level of Unwanted Signal for 1.0% Cross Modulation (Figure 10) mv (See Test Circuit in Figure 19) a . MOTOROLA SMALL-SIGNAL SEMICONDUCTORS | i 6-139
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ELECTRICAL CHARACTERISTICS (continued) (Ta = 25°C unless otherwise noted.) [—CCharnctertle | Smbot ‘Tin [tye [Max | Umit | ‘Common-Source Conversion Power Gain (Gate 1 or Gate 2 Injection, ‘Figure 12) | (See Test Circuit in Figure 13) (Signal Frequency = 100 MHz, Local Oscillator Frequency = 110.7 MHz) ' {See Test Circuit in Figure 13) : : COMMON-SOURCE ADMITTANCE PARAMETERS . {Vps* 15 Vee, Vegas = 4.0 Vee, Ip = 6.0 mAdel FIGURE 1 — INPUT ADMITTANCE FIGURE 2 — REVERSE TRANSFER ADMITTANCE a a | eS PP 4 ! eA a ya a a A PN 4 5 se a OA Pc Bee es Peg Eos Te & Boost Pos a a 7 Fa = a > : Ea a ca
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0 0 oa 100 a0 ‘0a 700 08 ‘FREQUENCY Hd «FREQUENCY Me) FIGURE 3 — FORWARD TRANSFER ADMITTANCE FIGURE 4 - OUTPUT ADMITTANCE Reo oe” eee A as A Es es 2 5 a a a Bee Se ss Ss
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§ Comers OB 2 sf ae Bee er 8 ee 2 CORT eT? Be Oe " 203 Eon 0 1 oes ae a 0 se ee a 3 Ee a = Fg a Oe i a a ae] “a oo 2 0 200 m0 Ey 40 0 2 100 00 00 ‘FREQUENCY Ota) ‘FREQUENCY sd FORWARD TRANSFER ADMITTANCE {Wps = 15 Vee f= 1.0 ke) ; FIGURE 5—GATE1 FIGURE 6 ~ GATE 2 a a A a = oe A Fe DG OO a a ae a 2 gett ARN het | ee eee Bs
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A Rn | OO ea ° 1 et) a a a a a ‘Vais. GATE 1 SOURCE VOLTAGE (VOLTS) + Vgag, GATE 2S0URCE VOLTAGE (VOLTS) . a MOTOROLA SMALL-SIGNAL SEMICONDUCTORS : 6140”
MOTOROLA SC {XSTRS/R FY qb DE | ee oosebbs 4 {6367254 MOTOROLA SC (XSTRS/R F) 96D 82669 OD MFE140 T-2)-a5 FIGURE 7 — POWER GAIN FIGURE 8— NOISE FIGURE Ce A es 45) Fe a FAH z Oc a} ae Cir Trt yy | | E NEE tee 5 4 wXNS EP : EA a a sO 2 oF ANH+H t+ TAH : Fa a dS IN {| 3 Fs : Ey a a a roe ENYA : a i : a = i 2 ae wlLETTTH TT 1 4) i 300400 200800 «10K Tok 30k 300400 woo G00 10k Zk 30k i fs, SOURCE IMPEDANCE (OHMS) ‘Rs, SOURCE IMPEDANCE (OHMS) | - FIGURE 9 — GAIN REDUCTION . FIGURE 10~ CROSS MODULATION Q a Cs ct AAT HH ede EEE eee i watt TT yet | SO ,LttttaA Try SO BEPC eZEEEee] PP ERRAEEREEE EEE 3a 2 CCRC e cere eee PERRY EEERREEEEFEEEETE g iN BEE SCE eS EEERESCECEE RE
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wa J TTT) Tt tT 2 a a SNE EL a aan a are? To GROUND VOLTAGE WoLTS) LEVEL OF UNWANTED SLGNAL. FOR 1.8% CROSS HOOULATION ni) FIGURE 11 ~ 105MHe POWER GAIN AND NOISE FIGURE TEST CIRCUIT ony 120k a7 001 nF Tew a2 k 30.004 Ferrite Beads <1 ur 7100: “ ue cs . RF Input Z| Zn 202 = ; ¢ ) “ 10K oo - on “Te following component sues re fora sun stabliyfactor= 2.0 2 Nomina! A09F ARCO 402 TylL2 12s nh PAUL SMITH CO, 1264 5 Nominet 13:73 pr Anco 403 ie Torn yellow Gd Nomina! £30 pf JONANSON JMC2061 1 Nomina 7.0 9 Adlrd fr sore ronda Ali Decoupling Capecitors are Caramic Discs. an MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 6-141
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= | : i | a a WT 7 rr vit RS HAEETON VOLTAGE OLS! FIGURE 12 CONVERSION GAIN TEST CIRCUIT See ee ov15V 160 k: 120k eediadl
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6367254 MOTOROLA SC (XSTRS/R F) 96D 82671 D
. MFE140 T-3/-as : . PRINTED CIRCUIT BOARD LAYOUT INFORMATION FIGURE 14 - TEST FIXTURES : . 105 Miz POWER GAIN AND NOISE | ounetesreneor AF ovgut ct oath 270 ou -O) ue | eee “ Pag © | 0.001 HF 47 0.001uF 100k0.001 uF 120k 82k Ea 100 et 102 CONVERSION Saw wesreineurr 100k 120% Fete ouae 0.14F 47_0001aF : Local Osittor input pomeetes: B genta amit, j . Peete e/a \\ A) ie Me CO ee § oe. a Me ; +S, 7 von pediad rg) ee Fe 4 DUT 270 0,001 nF C6 IF Output Note 11s on th bottom sd of he hoard
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