MFE122

MFE120 DIGITRON | Alldatasheet

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phone +1.908.245-7200 MFE120–MFE122 DU AL GATE MOSFET VHF AMPLIFIER MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Current ID 30 mAdc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 300 1.7 mW mW/°C Operating and Storage Temperature Range TJ, Tstg -65 to +175 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain Source Breakdown Voltage (ID = 100 µAdc, VS = 0, VG1S = -4.0 Vdc, VG2S = 4.0V) V(BR)DSX 25 - - Vdc Gate 1 – Source Breakdown Voltage (1) (IG1 = ±10 µAdc, VG2S = 0) V(BR)G1SO ±7.0 - ±20 Vdc Gate 2 – Source Breakdown Voltage (1) (IG2 = ±10 µAdc, VG2S = 0) V(BR)G2SO ±7.0 - ±20 Vdc Gate 1 Leakage Current G1S = ±6.0 Vdc, VG2S = 0, VDS = 0) IG1SS - - 20 nAdc Gate 2 Leakage Current G2S = ±6.0 Vdc, VG1S = 0, VDS = 0) IG2SS - - 20 nAdc Gate 1 to Source Cutoff Voltage DS = 15 Vdc, VG2S = 4.0 Vdc, ID = 200 µAdc) VG1S(off) - - -4.0 Vdc Gate 2 to Source Cutoff Voltage DS = 15 Vdc, VG1S = 0, ID = 200 µAdc) VG2S(off) - - -4.0 Vdc ON CHARACTERISTICS Zero-Gate Voltage Drain Current DS = 15 Vdc, VG1S = 0, VG2S = 4.0 Vdc) MFE120 MFE121 MFE122 I DSS 2.0 5.0 2.0 7.0 9.0 mAdc SMALL SIGNAL CHARACTERISTICS Forward Transfer Admittance (Gate 1 to Drain) (VDS = 15 Vdc, VG2S = 4.0 Vdc, ID = 10mAdc, f = 1.0 kHz) MFE120, MFE122 MFE121 fs⎪ 8000 10000 18000 20000 µmhos Input Capacitance DS = 15 Vdc, VG2S = 4.0 Vdc, ID = IDSS, f = 1.0 MHz) MFE120, MFE122 MFE121 C iss 4.5 4.5 7.0 6.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VG2S = 4.0 Vdc, ID = 6.0 mAdc, f = 1.0 MHz) Crss 0.023 - pF Output Capacitance (VDS = 15 Vdc, VG2S = 4.0 Vdc, ID = IDSS, f = 1.0 MHz) MFE120, MFE122 MFE121 C oss 2.5 2.5 4.0 3.5 pF FUNCTIONAL CHARACTERISTICS Noise Figure DS = 15 Vdc, VG2S = 4.0 Vdc, ID = 6.0mAdc, ZS is optimized for NF) (f = 105MHz, Figure 1) (f = 60MHz, figure 3) (f = 200MHz, figure 3) MFE120 MFE121 MFE121 NF 2.9 2.6 2.6 5.0 5.0 5.0 dB sales@digitronco rp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20121114

phone +1.908.245-7200 MFE120–MFE122 DU AL GATE MOSFET VHF AMPLIFIER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Common Source Power Gain (VDS = 15 Vdc, VG2S = 4.0 Vdc, ID = 6.0mAdc, ZS is optimized for NF) (f = 105MHz, Figure 1) (f = 60MHz, figure 3) (f = 200MHz, figure 3) MFE120 MFE121 MFE121 G ps 19.6 27.8 18.6 dB Level of Unwanted Signal for 1.0% Cross Modulation DS = 15 Vdc, VG2S = 4.0 Vdc, ID = 6.0mAdc) - 100 - mV Common Source Conversion Power Gain (gate 1 Injection, figure 2) DS = 15 Vdc, VG2S = 4.0 Vdc, local oscillator voltage = 925mVrms (Signal Frequency = 60MHz, local oscillator frequency = 104MHz) (Signal Frequency = 200MHz, local oscillator frequency = 244MHz) MFE122 MFE122 G C 16.5 13.3 dB sales@digitronco rp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20121114

phone +1.908.245-7200 MFE120–MFE122 DU AL GATE MOSFET VHF AMPLIFIER sales@digitronco rp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20121114

phone +1.908.245-7200 MFE120–MFE122 DU AL GATE MOSFET VHF AMPLIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. sales@digitronco rp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20121114