MF400K04F3 APTSEMI | Alldatasheet
Document overview
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Technical content
Features
y Soft Reverse Recovery Characteristics y Ultrafast Reverse Recovery Time y Low Reverse Recovery Loss y Low Forward Voltage y High Surge Current Capability y Low Inductance Package Circuit
D o c u m e n t N u m b e r : S - M 0 0 6 3 www.apt-semi.com Rev.1.0, May.31, 2013 2
Electrical Characteristics
Fig3. Reverse Recovery Current vs diF/dt Fig4. Reverse Recovery Charge vs diF/dt Fig1. Forward Voltage Drop vs Forward Current Fig2. Reverse Recovery Time vs diF/dt 0 di F/dt 400 600 A/us 1000 500 ns 400 300 200 100 trr Symbol Conditions Values Units Min. Typ. Max. IRM VR=400V -- -- 1 mA VR=400V, TJ=125°C -- -- 2 mA VF IF=200A -- 1.1 1.35 V trr IF=1A, VR=30V, diF/dt=-200A/μs -- 45 -- ns trr VR=200V, IF=200A,diF/dt=-200A/μs, TJ=25°C -- 135 -- ns IRRM -- 12 -- A trr VR=200V, IF=200A,diF/dt=-200A/μs, TJ=125°C -- 210 -- ns IRRM -- 20 -- A 300 A 200 100 IF 25℃ 125℃ VR=200V TJ=125℃ 100 A IRRM 0 di F/dt 500 A/us 1000 VR=200V TJ=125℃ IF=400A IF=200A IF=100A IF=400A IF=200A IF=100A 0 di F/dt 500 A/us 1000 uc Qrr IF=400A IF=200A IF=100A VR=200V TJ=125℃
D o c u m e n t N u m b e r : S - M 0 0 6 3 www.apt-semi.com Rev.1.0, May.31, 2013 3 Package Outline Information CASE: F3 Dimensions in mm Fig5. Transient Thermal Impedance KW 10-1 10-2 ZthJC 10-4 10-4 1 0 -3 10-2 1 0 -1 1