MF200K06F3 APTSEMI | Alldatasheet
Document overview
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Technical content
Features
y Soft Reverse Recovery Characteristics y Ultrafast Reverse Recovery Time y Low Reverse Recovery Loss y Low Forward Voltage y High Surge Current Capability y Low Inductance Package Circuit
D o c u m e n t N u m b e r : S - M 0 0 6 0 www.apt-semi.com Rev.1.0, May.31, 2013 2
Electrical Characteristics
Fig3. Reverse Recovery Current vs diF/dt Fig4. Reverse Recovery Charge vs diF/dt Fig1. Forward Voltage Drop vs Forward Current Fig2. Reverse Recovery Time vs diF/dt 0 di F/dt 500 A/us 1000 500 ns 400 300 200 100 trr Symbol Conditions Values Units Min. Typ. Max. IRM VR=600V -- -- 0.5 mA VR=600V, TJ=125°C -- -- 1 mA VF IF=100A -- 1.15 V IF=100A, TJ=125°C -- 1.0 V trr IF=1A, VR=30V, diF/dt=-200A/μs -- 48 -- ns trr VR=300V, IF=100A, diF/dt=-200A/μs, TJ=25°C -- 105 -- ns IRRM -- 10 -- A trr VR=300V, IF=100A, diF/dt=-200A/μs, TJ=125°C -- 200 -- ns IRRM -- 18 -- A 200 A 160 120 IF 0 V F 1 2 V 2 . 5 100 A 2 0 IRRM 0 di F/dt 500 A/us 1000 0 di F/dt 500 A/us 1000 uc Qrr
D o c u m e n t N u m b e r : S - M 0 0 6 0 www.apt-semi.com Rev.1.0, May.31, 2013 3 Package Outline Information CASE: F3 Dimensions in mm Fig5. Dynamic Parameters vs Junction Temprature Fig6. Transient Thermal Impedance 1.4 1.2 0.8 0.6 0.4 0.2 Kf