MF200K04F3 APTSEMI | Alldatasheet
Document overview
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Technical content
Features
y Soft Reverse Recovery Characteristics y Ultrafast Reverse Recovery Time y Low Reverse Recovery Loss y Low Forward Voltage y High Surge Current Capability y Low Inductance Package Circuit
D o c u m e n t N u m b e r : S - M 0 0 5 9 www.apt-semi.com Rev.1.0, May.31, 2013 2
Electrical Characteristics
Fig3. Reverse Recovery Current vs diF/dt Fig4. Reverse Recovery Charge vs diF/dt Fig1. Forward Voltage Drop vs Forward Current Fig2. Reverse Recovery Time vs diF/dt 0 di F/dt 500 A/us 1000 300 ns 150 trr Symbol Conditions Values Units Min. Typ. Max. IRM VR=400V -- -- 0.5 mA VR=400V, TJ=125°C -- -- 1 mA VF IF=100A -- 1.1 1.35 V trr IF=1A, VR=30V, diF/dt=-200A/μs -- 38 -- ns trr VR=200V, IF=100A, diF/dt=-200A/μs, TJ=25°C -- 95 -- ns IRRM -- 8.5 -- A trr VR=200V, IF=100A, diF/dt=-200A/μs, TJ=125°C -- 150 -- ns IRRM -- 14 -- A 300 A 200 100 IF 0 V F 1 2 V 2 . 5 25℃ 125℃ VR=200V TJ=125℃ A IRRM 0 0 di F/dt 500 A/us 1000 VR=200V TJ=125℃ IF=200A IF=100A IF=50A IF=200A IF=100A IF=50A 0 di F/dt 500 A/us 1000 uc 1.5 Qrr IF=200A IF=100A IF=50A VR=200V TJ=125℃
D o c u m e n t N u m b e r : S - M 0 0 5 9 www.apt-semi.com Rev.1.0, May.31, 2013 3 Package Outline Information CASE: F3 Dimensions in mm