MF100C12F1 APTSEMI | Alldatasheet
Document overview
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Technical content
Features
y Soft Reverse Recovery Characteristics y Ultrafast Reverse Recovery Time y Low Reverse Recovery Loss y Low Forward Voltage y High Surge Current Capability y Low Inductance Package Circuit
D o c u m e n t N u m b e r : S - M 0 0 6 9 www.apt-semi.com Rev.1.0, May.31, 2013 2
Electrical Characteristics
Fig3. Reverse Recovery Current vs diF/dt Fig4. Reverse Recovery Charge vs diF/dt Fig1. Forward Voltage Drop vs Forward Current Fig2. Reverse Recovery Time vs diF/dt 0 di F/dt 500 A/us 1000 600 ns 300 trr Symbol Conditions Values Units Min. Typ. Max. IRM VR=1200V -- -- 1 mA VR=1200V, TJ=125°C -- -- 10 mA VF IF=100A -- 1.58 V IF=100A, TJ=125°C -- 1.35 V trr IF=1A, VR=30V, diF/dt=-200A/μs -- 55 -- ns trr VR=600V, IF=100A, diF/dt=-200A/μs, TJ=25°C -- 135 -- ns IRRM -- 10 -- A trr VR=600V, IF=100A, diF/dt=-200A/μs, TJ=125°C -- 380 -- ns IRRM -- 21 -- A 200 A 120 IF 0 V F 0 . 8 1 . 6 V 2 . 4 25℃ 125℃ VR=600V TJ=125℃ 120 A IRRM 0 di F/dt 500 A/us 1000 VR=600V TJ=125℃ IF=200A IF=100A IF=50A IF=200A IF=100A IF=50A 0 di F/dt 500 A/us 1000 uc Qrr IF=200A IF=100A IF=50A VR=600V TJ=125℃
D o c u m e n t N u m b e r : S - M 0 0 6 9 www.apt-semi.com Rev.1.0, May.31, 2013 3 Package Outline Information CASE: F1 Dimensions in mm