MEP4435Q8_14 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • Simple drive requirement
  • Low on-resistance
  • Fast switching speed
  • Pb-free lead plating package Equivalent Circuit Outline MEP4435Q8 S：Source D：Drain G：Gate SOP-8

CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : 2014.03.05 Page No. : 2/9 MEP4435Q8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS -30 V Gate-Source V oltage VGS ±25 V Continuous Drain Current @ TA=25°C, VGS=-10V -13 A Continuous Drain Current @ TA=100°C, VGS=-10V ID -8.2 A Pulsed Drain Current IDM -50 *1 A Avalanche Current IAS -13 A Avalanche Energy @ L=0.1mH, ID=-13A, RG=25Ω EAS 8.5 mJ Repetitive Avalanche Energy @ L=0.05mH EAR 2.5 *2 mJ TA=25℃ 2.5 *3 W Total Power Dissipation TA=100℃ PD 1 *3 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 20 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 50 *3 °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - V VGS=0, ID=-250μA VGS(th) -1 -1.5 -3 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±25V , VDS=0 IDSS - - -1 μA VDS=-24V , VGS=0 IDSS - - -10 μA VDS=-24V , VGS=0, Tj=125°C - 9.3 12 VGS=-10V , ID=-13A - 14 20 VGS=-5V , ID=-7A RDS(ON) *1 15 21 mΩ VGS=-4.5V , ID=-5A GFS *1 - 20 - S VDS=-5V , ID=-10A Dynamic Ciss - 2994 - Coss - 323 - Crss - 258 - pF VDS=-15V , VGS=0, f=1MHz

CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : 2014.03.05 Page No. : 3/9 MEP4435Q8 CYStek Product Specification Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions tr *1, 2 - 10 - td(OFF) *1, 2 - 44 - tf *1, 2 - 15 - ns VDD=-15V , ID=-1A, VGS=-10V , RG=2.7Ω Qgs *1, 2 - 12 - Qgd *1, 2 - 13 - nC VDS=-15V , ID=-10A, VGS=-10V , Rg - 4 - Ω VGS=15mV , VDS=0, f=1MHz Source-Drain Diode IS *1 - - -3 ISM *3 - - -12 A VSD *1 - - -1.2 V IF=IS, VGS=0V trr - 40 - ns Qrr - 28 - nC IF=IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature.

Ordering Information

(Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : 2014.03.05 Page No. : 4/9 MEP4435Q8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 100 01234 -10V -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) VGS=-4V VGS=-3V Brekdown Voltage vs Ambient Temperature -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) -BVDSS, Drain-Source Breakdown Voltage(V) ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=-4.5V VGS=-2.5V VGS=-10V Source Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 048 1 2 1 6 2 S, Source Drain Current(A) -VSD, Source-Drain Voltage(V) VGS=0V Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=-10V, ID=-10A -VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=-10A

CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : 2014.03.05 Page No. : 5/9 MEP4435Q8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) -VGS(th), Threshold Voltage(V) ID=-250μA ID=-1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.01 0.1 1 10 100 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=-5V Pulsed TA=25°C Gate Charge Characteristics 0 8 16 24 32 40 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) ID=-10A VDS=-5V VDS=-10V VDS=-15V Maximum Safe Operating Area 0.01 0.1 100 0.1 1 10 100 -ID, Drain-Source Voltage(V) -ID, Drain Current(A) DC 10ms 100ms 1ms 100μs 10μs TA=25°C, Tj=150°C, VGS=-10V θJA=50°C/W, Single Pulse Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A)TA=25°C, VGS=-10V

CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : 2014.03.05 Page No. : 6/9 MEP4435Q8 CYStek Product Specification Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C θJA=50°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50°C/W Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : 2014.03.05 Page No. : 7/9 MEP4435Q8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : 2014.03.05 Page No. : 8/9 MEP4435Q8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

ech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : 2014.03.05 Page No. : 9/9 CYSt MEP4435Q8 CYStek Product Specification SOP-8 Dimension Marking: Device Name Year Code : Last digit of Christian year Month Code : A, B, C, D, E, F, G , H, J, K, L, and M represent Jan thru Dec Production Lot Serial number: Rolling from 01 each month 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 *: Typical Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.