MECP01 CET | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
© 60V , 15A, Rosionj=80MQ @Ves=10V. D Rosion=85MQ @Ves=5V. © Super high dense cell design for extremely low Ros(on). e High power and current handling capability. © T0-252 package. e ° o CEU SERIES TO-252AA(D-PAK) Ss ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Drain Current-Continuous Poe fos fa Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25°C Derate above 25°C Operating and Storage Temperature Range -55 to 175 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Rava 50 6-92
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) [Parameter | 5ymboi] conn [in| Ty a nt parsunemoning [ee [ verme=eaa [wf [TT tscenisbarGrsi —[ oe [verte > [poe] ieoainn————[w [ vosvecmet | [pero oom fp ome te Pvecresca [fa | stata [wa [ venue fe PP a feet | ts | vere | To [Ts mCIGIES - Vos = 25V, Ves= OV feceee fee] St” Catala mre man | [ea a EES vo, CLs fal] Src facade [0 pepe pe esta [0 mes 6-93
a Pulse Test:Pulse Width <300 1 s, Duty Cycle < 2%. b.Guaranteed by design, not subject to production testing.
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Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Capacitance Figure 4, On-Resistance Variation with
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Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
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Figure 9. Gate Charge Figure 10. Maximum Safe