ME7804AS-G ETC | Alldatasheet

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Jun, 2012-Ver1.6 N-Channel 30V (D-S) MOSFET ME7804AS-G Parameter Symbol Maximum Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current* TA=25℃ ID 11.5 A TA=70℃ 9.2 TC=25℃ 26.9 TC=100℃ 17 Pulsed Drain Current IDM 46 A Maximum Power Dissipation* TA=25℃ PD 3.8 W TA=70℃ 2.4 TC=25℃ 20.8 TC=100℃ 8.3 Operating Junction T emperature TJ -55 to 150 ℃ Thermal Resistance-Junction to Ambient* RθJA 33 ℃/W Thermal Resistance-Junction to Case* RθJC 6 ℃/W GENERAL DESCRIPTION The ME7804AS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on -state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.

FEATURES

  • RDS(ON) ≦18 mΩ@VGS=10V
  • RDS(ON) ≦30 mΩ@VGS=4.5V
  • Super high density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability

APPLICATIONS

  • Power Management in Note book
  • Portable Equipment
  • Battery Powered System
  • DC/DC Converter
  • Load SwitchC
  • LCD Display inverter PIN CONFIGURATION Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) * The * *The device mounted on 1in2 FR4 board with 2 oz copper * Th Ordering Information: ME7804AS-G (Green product-Halogen free) (DFN(S) 3.3x3.3) T op View DCC 正式發行

Jun, 2012-Ver1.6 N-Channel 30V (D-S) MOSFET ME7804AS-G Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing. b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. Symbol Parameter Limit Min Typ Max Unit STATIC BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 3.0 V IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V 1 μA RDS(ON) Drain-Source On-State Resistance a VGS=10V, ID= 10A 14 18 mΩ VGS=4.5V, ID= 5A 23 30 ｇFS Forward Transconductance VDS=5V, ID=8A 14 S VSD Diode Forward Voltage IS=2.3A, VGS=0V 0.76 1.1 V DYNAMIC Qg Gate Charge VDS=15V, VGS=10V, ID=10A 15.5 nC Qgt T otal Gate Charge VDS=15V, VGS=4.5V, ID=10A 7.8 Qgs Gate-Source Charge 3.2 Qgd Gate-Drain Charge 3.8 Ciss Input capacitance VDS=15V, VGS=0V, f=1MHz 535 pF Coss Output Capacitance 95 Crss Reverse Transfer Capacitance 30 Rg Gate Resistance VDS=0V, VGS=0V, F=1MHz 0.9 Ω td(on) Turn-On Delay Time VDD=25V, RL =25Ω ID=1A, VGEN=10V RG=6Ω ns tr Turn-On Rise Time 9 td(off) Turn-Off Delay Time 39 tf Turn-Off Fall Time 6 Electrical Characteristics (TA =25℃ Unless Otherwise Specified) DCC 正式發行

Jun, 2012-Ver1.6 N-Channel 30V (D-S) MOSFET ME7804AS-G Typical Characteristics (TJ =25℃ Noted) DCC 正式發行

Jun, 2012-Ver1.6 N-Channel 30V (D-S) MOSFET ME7804AS-G Typical Characteristics (TJ =25℃ Noted) DCC 正式發行

Jun, 2012-Ver1.6 N-Channel 30V (D-S) MOSFET ME7804AS-G DFN(S) 3.3x3.3 Package Outline DCC 正式發行