ME75N80C THINKISEMI | Alldatasheet

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R DS(ON) = 0.011 ohm I D = 80A BV DSS = 75V 2. Drain 3. Source 1. Gate Pb Free Plating Product ME75N80C Pb 75V,80A Heatsink Planar N-Channel Power MOSFETs General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technol- ogy intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220M-SQ pkg is well suited for adaptor power units,amplifiers,inverters and SMPS application. TO-220M-SQ 1 2 3 ME75N80C © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/5Rev.08C

FEATURES

  • R DS(ON) = 9.5mΩ @V GS = 10 V(Typical) * Ultra low gate charge ( typical 117 nC ) * Fast switching capability * Low reverse transfer Capacitance (C RSS = typical 240 pF ) * Avalanche energy Specified * Improved dv/dt capability, high ruggedness „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 75 V Gate-Source Voltage V GSS ±20 V Continuous Drain Current T C = 25°C I D 80 A Pulsed Drain Current (Note 2) I DM 320 A Single Pulsed Avalanche Energy (Note 3) E AS 700 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 12 V/ns TO-220/TO-263 300 W Power Dissipation TO-220F P D 45 W Junction Temperature T J +175 °C Storage Temperature T STG -55 ~ +175 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings onl y and functional device operation is not implied. 2. Pulse width limited by safe operating area 3. Starting T J =25°C, I D =40A, V DD =37.5V 4. I SD ≤80A, di/dt≤300A/µs, V DD ≤BV DSS , T J JMAX

„ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-220/TO-263 62.5 °C /W Junction to Ambient TO-220F θ JA 62.5 °C /W TO-220/TO-263 0.5 °C /W Junction to Case TO-220F θ JC 3.33 °C /W „ ELECTRICAL CHARACTERISTICS C = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0 V, I D = 250 µA 75 V Drain-Source Leakage Current I DSS V DS = 75 V, V GS = 0 V 1 µA Forward V GS = 20V, V DS = 0 V 100 nA Gate-Source Leakage Current Reverse I GSS V GS = -20V, V DS = 0 V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = V GS , I D = 250 µA 2.0 3.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10 V, I D = 40 A 9.5 11 m Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 3700 pF Output Capacitance C OSS 730 pF Reverse Transfer Capacitance C RSS V GS = 0 V, V DS = 25 V f = 1MHz 240 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 25 ns Turn-On Rise Time t R 100 ns Turn-Off Delay Time t D(OFF) 66 ns Turn-Off Fall Time t F V DD = 37.5V, I D =45A, V GS =10V, R G =4.7Ω 30 ns Total Gate Charge Q G 117 160 nC Gate-Source Charge Q GS 27 nC Gate-Drain Charge Q GD V DS = 60V, V GS = 10 V I D = 80A 47 nC „ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 2) V SD V GS = 0 V, I S = 80A 1.5 V Continuous Source Current I S 80 A Pulsed Source Current (Note 1) I SM 320 A Reverse Recovery Time t RR 132 ns Reverse Recovery Charge Q RR I S = 80A, V DD = 25 V dI F / dt = 100 A/µs 660 µC Note: 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 2/5Rev.08C ME75N80C

„ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L V DD Drive r V GS R G V D S D.U.T. + * dv/dt controlled by R G * I SD controlled by pulse period * D.U.T.-Device Under Test P. W. Period D=V GS (Driver) I SD (D.U.T.) I FM , Body Diode Forward Current di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop V DD 10V V DS (D.U.T.) V GS P.W. Period 1A Peak Diode Recovery dv/dt Test Circuit 1B Peak Diode Recovery dv/dt Waveforms © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 3/5Rev.08C ME75N80C

„ TEST CIRCUITS AND WAVEFORMS (Cont.) 2A Switching Test Circuit 2 B S w i t c h i n g W a v e f o r m s

3 A G a t e C h a r g e T e s t C i r c u i t 3 B G a t e C h a r g e W a v e f o r m

4A Unclamped Inductive Switching Test Circuit 4B Unclamped Inductive Switching Waveforms © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 4/5Rev.08C ME75N80C

„ TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current, I D (µA) Drain-Source Breakdown Voltage, BV DSS (V) 250 100 150 200 300 40 80 100 350 400 450 0.500 Drain Current vs. Gate Threshold Voltage Drain Current, I D (µA) Gate Threshold Voltage, V TH (V) 250 100 150 200 300 1 4.02.01.5 2.5 3.0 3.5 1500 Drain-Source On-State Resistance Characteristics Drain Current, I D (A) Drain to Source Voltage, V DS (mV) 10050 200 0.20 Drain Current vs. Source to Drain Voltage Drain Current, I D (A) Source to Drain Voltage, V SD (V) 0.80.4 0.6 1.0 1.8 1.6 1.4 1.2 0.8 0.6 0.4 0.2 V GS =10V I D =20A V GS =10V I D =1A © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 5/5Rev.08C ME75N80C