ME2328 YFWDIODE | Alldatasheet
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Technical content
1 / 5 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Parameter Symbol Rating Unit Drain-Source Voltage V DSS 105 V Gate-Source Voltage V GSS ±20 V T A =25℃ 1.5 Continuous Drain Current(Tj=150℃) T A =70℃ I D 1.2 A Pulsed Drain Current I DM 6 A T A =25℃ 1.3 Maximum Power Dissipation T A =70℃ P D 0.8 W Operating Junction Temperature T J -55 to 150 ℃ Thermal Resistance-Junction to Ambient R θJA 100 ℃/W PIN CONFIGURATION Absolute Maximum Ratings (T C =25℃ Unless Otherwise Noted) GENERAL DESCRIPTION The ME2328 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. * The device mounted on 1in FR4 board with 2 oz copper
FEATURES
- R DS(ON) ≦270mΩ@V GS =10V
- R DS(ON) ≦340mΩ@V GS =4.5V
- Super high density cell design for extremely low R DS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- DC/DC Converter
- Load Switch
- LCD Display inverter Ordering Information: M E 2 3 2 8 ( P b - f r e e ) ME2328-G (Green product-Halogen free) (SOT-23) Top View
2 / 5 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Symbol Parameter Limit Min Typ Max Unit STATIC BV DSS Drain-Source Breakdown Voltage V GS =0V, I D =250μA 105 110 V V GS(th) Gate Threshold Voltage V DS GS , I D =250μA 1 2 3 V I GSS Gate-Body Leakage V DS =0V, V GS =±20V ±100 nA I DSS Zero Gate Voltage Drain Current V DS =105V, V GS =0V 1 μA V GS =10V, I D =1.5A 230 270 R DS(ON) Drain-Source On-Resistance* V GS =4.5V, I D =1.0A 275 340 mΩ V SD Diode Forward Voltage * I SD =1.0A, V GS =0V 0.8 1.2 V DYNAMIC Qg Total Gate Charge V DS =50V, V GS =10V, I D =1.5A 12 Qg Total Gate Charge 6.6 Qgs Gate-Source Charge 2.6 Qgd Gate-Drain Charge V DS =50V, V GS =4.5V, I D =1.5A 3.3 nC Rg Gate Resistance V DS =0V, V GS =0V, f=1MHz 0.8 Ω C iss Input Capacitance 326 C oss Output Capacitance 38 C rss Reverse Transfer Capacitance V DS =15V, V GS =0V, f=1MHz pF t d(on) Turn-On Delay Time 10 t r Turn-On Rise Time 6 t d(off) Turn-Off Delay Time 30 t f Turn-Off Fall Time V DD =50V, R L =33Ω I D =0.2A, V GEN =10V, R G =6Ω ns Notes: a, pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing. b. Matsuki reserves the right to improve product design, functions and reliability without notice. Electrical Characteristics (T A =25℃ Unless Otherwise Specified)
3 / 5 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Typical Characteristics (T J =25℃ Noted)
4 / 5 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Typical Characteristics (T J =25℃ Noted)
5 / 5 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. SOT-23 SOT-23 3000Tape/Reel,7”reel Package Outline Summary of Packing Options Package Packing Description Packing Quantity Industry Standard EIA-481-1 UNIT A max. b p cD E e H E L p Qw v mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 bp D e A Lp Q detail X H E E w M v M A B A B 0 1 2 mm scale A 1.1 0.9 c X