ME2302A29T SUNMATE | Alldatasheet
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20V N-Channel Enhancement Mode Field Effect Transistor z Features V DS 20V, V GS 8V, I D 2.5A, R DS(ON) = 75mΩ @V GS = 4.5V. R DS(ON) = 90mΩ @V GS = 2.5V. Advanced trench process technology High-density cell design for ultra low on-resistance Compact and low profile SOT23 package z General Description ME2302 is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities. z Pin configurations See Diagram below z Package Information SOT23 Unit:mm ME2302
z Absolute Maximum Ratings @ T A = 25°C unless otherwise specified Parameter Symbol Ratings Unit Drain-Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V Continuous 2.5 Drain Current Pulsed I D A Power Dissipation (1) P D 350 mW Operating and Storage Junction Temperature Range T J , T STG -55 to +150 °C z Electrical Characteristics @ T A = 25°C unless otherwise specified Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage V (BR) DSS V GS = 0 V, I D = 10uA 20 -- -- V Zero Gate Voltage Drain Current I DSS V DS = 20 V, V GS = 0 V -- -- 1 uA Gate–Body Leakage I GSS V GS = ±8 V, V DS ON CHARACTERISTICS (2) Gate Threshold Voltage V GS(th) V DS = V GS , I D = 50uA 0.4 0.75 2.0 V V GS = 4.5 V, I D = 3.6 A -- 70 85 Static Drain–Source On-Resistance R DS(on) V GS = 2.5 V, I D = 3.1 A -- 90 115 mΩ Forward Transconductance g FS V DS = 5 V, I D = 3.6 A 2 7.7 14 S DYNAMIC CHARACTERISTICS Input Capacitance C iss -- 450 -- Output Capacitance C oss -- 70 -- Reverse Transfer Capacitance C rss V DS = 10 V, V GS = 0 V, f = 1.0 MHz -- 43 -- pF SWITCHING CHARACTERISTICS Turn–On Delay Time t d(on) -- -- 15 Turn–On Rise Time t r -- -- 80 Turn–Off Delay Tim t d(off) -- -- 60 Turn–Off Fall Time t f V DD = 5 V, I D = 3.6A, V GS =4.5 V,R GEN =6Ω -- -- 25 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage (2) V SD V GS = 0 V, I S = 1.1 A 0.6 0.8 1.15 V Notes : (1). Surface Mounted on FR4 Board, t < 10 sec. (2). Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
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