MD03P075LK HUIXIN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 6

Technical content

Features

  • Built-in G-S Protection Diode
  • Typical ESD Protection HBM Class 1B

Applications

  • Portable applications
  • battery management
  • high speed switch Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage -V DS 30 V Gate-Source Voltage V GS ± 20 V Drain Current -I D 4.6 A Peak Drain Current, Pulsed 1 ) -I DM 16 A Power Dissipation 2) P D 1.6 W Operating Junction and Storage Temperature Range T j, Tstg - 55 to + 150 ℃ Thermal Characteristics Parameter Symbol Max. Unit Thermal Resistance from Junction to Ambient 2) R θJA 78 ℃/W 1) Pulse Test: Pulse Width ≤ 100 μs,Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C. 2) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air. Classification Voltage Range(V) 0A < 125 0B 125 to < 250 1A 250 to < 500 1B 500 to < 1000 1C 1000 to < 2000 2 2000 to < 4000 3A 4000 to < 8000 3B ≥ 8000 1.Drain 2. Drain 3. Gate 4.Source 5. Drain 6. Drain SOT-26 Plastic Package +86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6

Characteristics at Ta = 25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit STATIC PARAMETERS Drain-Source Breakdown Voltage a t - ID = 250 μA -BVDSS 30 - - V Drain-Source Leakage Current a t - VDS = 24 V -IDSS - - 1 µA Gate Leakage Current a t VGS = ± 20 V IGSS - - ± 10 µA Gate-Source Threshold Voltage a t VDS = VGS, -ID = 250 µA -VGS(th) 1 - 2.1 V Drain-Source On-State Resistance a t - VGS = 10 V, -ID = 4 A a t - VGS = 4.5 V, -ID = 3 A RDS(on) mΩ DYNAMIC PARAMETERS Forward Transconductance a t - VDS = 10 V, -ID = 4 A gFS - 4.6 - S Gate resistance at VDS = 0 V, VGS = 0 V, f = 1 MHz Rg - 851 - Ω Input Capacitance a t - VDS = 15 V, VGS = 0 V, f = 1 MHz Ciss - 735 - pF Output Capacitance a t - VDS = 15 V, VGS = 0 V, f = 1 MHz Coss - 87 - pF Reverse Transfer Capacitance a t - VDS = 15 V, VGS = 0 V, f = 1 MHz Crss - 23 - pF Total Gate Charge a t - VDS = 15 V, -VGS = 10 V, -ID = 4 A a t - VDS = 15 V, -VGS = 4.5 V, -ID = 4 A Qg nC Gate-Source Charge at -V DS = 15 V, -VGS = 10 V, -ID = 4 A Qgs - 2.7 - nC Gate-Drain Charge a t - VDS = 15 V, -VGS = 10 V, -ID = 4 A Qgd - 2.7 - nC Turn-On Delay Time a t - VGS = 10 V, -VDS = 15 V, -ID = 4 A , Rg = 3.3 Ω td(on) - 958 - nS Turn-On Rise Time at -V GS = 10 V, -VDS = 15 V, -ID = 4 A , Rg = 3.3 Ω tr - 266 - nS Turn-Off Delay Time at -VGS = 10 V, -VDS = 15 V, -ID = 4 A , Rg = 3.3 Ω td(off) - 538 - nS Turn-Off Fall Time at -VGS = 10 V, -VDS = 15 V, -ID = 4 A , Rg = 3.3 Ω tf - 168 - nS Body-Diode PARAMETERS Body Diode Voltage at -lS = 1 A -VSD - - 1.2 V Body-Diode Continuous Current -IS - - 4.6 A Body Diode Reverse Recovery Time at -I S = 4 A, di/dt = 100 A / µs trr - 8.4 - nS Body Diode Reverse Recovery Charge at -I S = 4 A, di/dt = 100 A / µs Qrr - 3.3 - nC +86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6

Electrical Characteristics Curves Fig. 6 Typical Forward Characteristics Fig. 5 on-Resistance vs. Drain Current Fig. 3 on-Resistance vs. Gate-Source Voltage Fig. 4 on-Resistance vs.Tj Fig. 2 Typical Transfer Characteristics Fig. 1 Typical Output Characteristics +86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 6

Electrical Characteristics Curves Fig. 9 Typical Junction Capacitance Fig. 10 Gate Charge Fig. 8 Gate Threshold Variation vs. Tj Fig. 11 Drain-Source Leakage Current vs. Tj Fig. 7 V(BR)DSS vs. Junction Temperature 86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 6

Fig.1-1 Switching times test circuit Fig.1-2 Switching Waveform Fig.2-1 Gate charge test circuit Fig.2-2 Gate charge waveform +86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6

Package Outline (Dimensions in mm) SOT-26 Unit A A1 B C D E e1 F HE Lp bp mm 1.2 1.0 0.1 2.1 1.7 0.20 0.08 3.1 2.7 1.7 1.3 0.95 typ. 0.65 0.6 3.0 2.6 0.6 0.2 0.5 0.3 Recommended Soldering Footprint Packing information Marking information " PH " = Part No. "YM" = Date Code Marking "Y" = Year "M" = Month Font type: Arial Package Tape Width (mm) Pitch Reel Size Per Reel Packing Quantity mm inch mm inch SOT-26 8 4 ± 0.1 0.157 ± 0.004 178 7 3,000 PH Pin1 point 2.4 0.7 1.0 0.950.95 1 2 3 6 5 4 bp A1 A B HE D E F Lp C 86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of6