MCZ33661EFR2

33661 FREESCALE | Alldatasheet

Document overview

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Technical content

Features

• Operational from V SUP 6.0 V to 18 V DC, Functional up to 27 V DC, and Handles 40 V During Load Dump
• Active Bus Waveshaping Offering Excellent Radiated Emission Performance
• 5 . 0 kV ESD on LIN Bus Pin
• 3 0 kΩ Internal Pullup Resistor
• LIN Bus Short-to-Ground or High Leakage in Sleep Mode
• - 1 8 V to +40 V DC Voltage at LIN Pin
• 8 . 0 µA in Sleep Mode
• Local and Remote Wake-Up Capability Reported by INH and RXD Pins
• 5 . 0 V and 3.3 V Compatible Digital Inputs Without Any External Components Required
• Pb-Free Packaging Designated by Suffix Code EF

Figure 1. 33661 Simplified Application Diagram

ORDERING INFORMATION

Range (TA) Package MC33661D/R2 - 40°C to 125°C 8 SOICN MCZ33661EF/R2 D SUFFIX EF SUFFIX (PB-FREE) 98ASB42564B 8-PIN SOICN RXD 33661 MCU TXD EN WAKE LIN INH GND VSUP LIN Bus VPWR 5.0 V Regulator 12 V VDD

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Figure 2. 33661 Simplified Internal Block Diagram

Figure 3. 33661 8-SOICN Pin Connections Table 1. 33661 8-SOICN Pin Definitions A functional description of each pin can be found in the Functional Pin Description section beginning on page page 12. 1 RXD Data Output MCU interface that reports the state of the LIN bus voltage. 2 EN Enable Control Controls the operation mode of the interface. 3 WAKE Wake Input High-voltage input used to wake up the device from Sleep mode. 4 TXD Data Input MCU interface to control the state of the LIN output. 5 GND Ground Device ground pin. 6 LIN LIN Bus Bidirectional pin that represents the single-wire bus transmitter and receiver. 7 VSUP Power Supply Device power supply pin.

8 INH Inhibit Output This pin can have two main functions: controlling an external switchable voltage

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ELECTRICAL CHARACTERISTICS

Table 2. Maximum Ratings permanent damage to the device. accordance with the Machine Model (CZAP = 220 pF, RZAP = 0 Ω). cause malfunction or permanent damage to the device.

1. Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow

MC33xxxD enter 33xxx), and review parametrics.

Analog Integrated Circuit Device Data Freescale Semiconductor 5 33661 STATIC ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.

13.5 V < VSUP < 18 V

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STATIC ELECTRICAL CHARACTERISTICS LIN PIN (VOLTAGE EXPRESSED VERSUS VSUP VOLTAGE) Low-Level Bus Voltage (Dominant State) External Bus Pullup 500 Ω VDOM — — 1.4 V High-Level Bus Voltage (Recessive State) TXD HIGH, IOUT = 1.0 µA VREC VSUP - 1.0 — — V Internal Pullup Resistor to VSUP (Normal Mode) RPU 20 30 47 kΩ Internal Pullup Current Source (Sleep Mode) IPU — 20 — µA Overcurrent Shutdown Threshold IOV-CUR 50 75 150 mA Leakage Current to GND Recessive State, 8.0 V ≤ VSUP ≤ 18 V, 8.0 V ≤ VLIN ≤ 18 V GND Disconnected, VGND = VSUP, VLIN at - 18 V VSUP Disconnected, VLIN at +18 V ILEAK - 1.0 3.0 1.0 1.0 µA mA µA LIN Receiver, Low-Level Input Voltage TXD HIGH, RXD LOW VLINL 0 VSUP — 0.4 VSUP V LIN Receiver, High-Level Input Voltage TXD HIGH, RXD HIGH VLINH

0.6 VSUP — VSUP

V LIN Receiver Threshold Center (VLINH - VLINL) / 2 VLINTH 0.475 VSUP 0.5 VSUP 0.525 VSUP V LIN Receiver Input Voltage Hysteresis VLINH - VLINL VLINHYST — — 0.175 VSUP V LIN Wake-Up Threshold Voltage VLINWU — 0.5 VSUP — V INH OUTPUT PIN Driver ON Resistance (Normal Mode) INHON — 35 70 Ω Leakage Current (Sleep Mode)

0 V < VINH < VSUP

0 — 5.0 µA WAKE INPUT PIN Typical Wake-Up Threshold Voltage (EN = 0 V, 7.0 V ≤ VSUP ≤ 18 V) (5) HIGH-to-LOW Transition LOW-to-HIGH Transition VWUTH

0.3 VSUP

0.4 VSUP

0.43 VSUP

0.55 VSUP

0.65 VSUP

V Wake-Up Threshold Voltage Hysteresis VWUHYST 0.1 VSUP 0.16 VSUP 0.2 VSUP V WAKE Input Current VWAKE < 27 V IWU — 1.0 5.0 µA Notes 4 This parameter is guaranteed by design; however, it is not production tested. 5 When V SUP > 18 V, the wake-up voltage thresholds remain identical to the wake-up thresholds at 18 V. Table 3. Static Electrical Characteristics (continued) values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.

Analog Integrated Circuit Device Data Freescale Semiconductor 7 33661 DYNAMIC ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS Table 4. Dynamic Electrical Characteristics values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. 7 This parameter is guaranteed by design; however, it is not production tested. 8 Measured between LIN signal threshold VLINL or VLINH and 50% of RXD signal.

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DYNAMIC ELECTRICAL CHARACTERISTICS SLEEP MODE AND WAKE-UP TIMINGS EN Pin Wake-Up Time (9) t LWUE — 5.0 15 µs WAKE Pin Filter Time (10) t WF 10 — 70 µs LIN Pin Wake-Up Filter Time (LIN Bus Wake-Up) (11) t WUF 40 70 120 µs Sleep Mode Delay Time (12) EN HIGH-to-LOW t SD 50 — — µs Delay for INH Turning off When Device Enters in Sleep Mode(16), (17) EN HIGH-to-LOW and INH HIGH-to-LOW tSD_INH — — 50 µs Delay Time Between EN and TXD for Mode Selection (13), (14) t D_MS 5.0 — — µs Delay Time Between First TXD after Device Mode Selection (13), (14) t D_COM 50 — — µs FAST BAUD RATE TIMING Delay Entering Fast Baud Rate Using Toggle Function (15) EN LOW to EN HIGH t 1 — — 35 µs Delay on EN Pin Resetting Fast Baud Rate to Previous Baud Rate (15) EN LOW to EN HIGH t 2 — — 5.0 µs Notes 9 See Figures 7 and 8, 10. 10 See Figures 9 and 10, 10. 11 See Figures 11 and 12, 11. 12 See Figure 14a, 11. 13 See Figures 7 through 12, pp. 10–11. 14 This parameter is guaranteed by desi gn; however, it is not production tested. 15 See Figure 13, 11. 16 No capacitor is connected to the INH pi n. Measurement is done between the EN HIGH-to-LOW transition at 80% of INH voltage. 17 See Figure 14b, 11. Table 4. Dynamic Electrical Characteristics (continued) values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.

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Figure 7. EN Pin Wake-Up and Figure 8. EN Pin Wake-Up and Figure 9. WAKE Pin Wake-Up and Figure 10. WAKE Pin Wake-Up and Figure 11. LIN Bus Wake-Up and

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The 33661 is a Physical Layer component dedicated to automotive LIN sub-bus applications. The 33661 features include slew rate selection for optimized operation at 10 kbps and 20 kbps, fast baud rate for test and programming modes, excellent radiated emission performance, and safe behavior in case of LIN bus short-to- ground or LIN bus leakage during low power mode. Digital inputs are 5.0 V and 3.3 V compatible without any external component required. The INH output may be used to control an external voltage regulator or to drive a LIN bus pullup resistor. FUNCTIONAL PIN DESCRIPTION POWER SUPPLY PIN (VSUP) The VSUP supply pin is the power supply pin for the 33661. The pin is connected to a battery through a serial diode for reverse battery protection. The DC operating voltage is from 7.0 V to 27 V. This pin sustains standard automotive voltage conditions such as 27 V DC during jump- start conditions and 40 V during load dump. Supply current in the Sleep mode is typically 8.0 µA. GROUND PIN (GND) In case of a ground disconnection at the module level, the 33661 does not have significant current consumption on the LIN bus pin when in the recessive state. (Less than 100 µA is sourced from LIN bus pin, which creates 100 mV drop voltage from the 1.0 kΩ LIN bus pullup resistor.) LIN BUS PIN (LIN) This I/O pin represents the single-wire bus transmitter and receiver. Transmitter Characteristics The LIN driver is a low-side MOSFET with internal overcurrent thermal shutdown. An internal pullup resistor with a serial diode structure is integrated so no external pullup components are required for the application in a slave node. An additional pullup resistor of 1.0 kΩ must be added when the device is used in the master node. Voltage can go from - 18 V to 40 V without current other than the pullup resistance. The LIN pin exhibits no reverse current from the LIN bus line to VSUP, even in the event of GND shift or V PWR disconnection. The transmitter has two slew rate selections: 20 kbps (normal slew rate) and 10 kbps (slow slew rate). The slow slew rate can be used to improve radiated emissions. Receiver Characteristics The receiver thresholds are ratiometric with the device supply pin. DATA INPUT PIN (TXD) The TXD input pin is the MCU interface to control the state of the LIN output. When TXD is LOW, LIN output is LOW; when TXD is HIGH, the LIN output transistor is turned OFF. The threshold is 3.3 V and 5.0 V compatible. The baud rate selection (normal or Slow mode) is done at device wake-up by the state of the TXD pin prior to a HIGH level at the EN pin (see Figures 7 through 12, pp. 10–11). DATA OUTPUT PIN (RXD) The RXD output pin is the MCU interface, which reports the state of the LIN bus voltage. LIN HIGH (recessive) is reported by a high voltage on RXD; LIN LOW (dominant) is reported by a low voltage on RXD. The RXD output structure is a CMOS-type push-pull output stage. The low level is fixed. The high level is dependant on the EN voltage. If EN is set at 3.3 V, RXD VOH is 3.3 V. If EN is set at 5.0 V, RXD VOH is 5.0 V. In the Sleep mode, RXD is high impedance. When a wake- up event is recognized from WAKE pin or from the LIN bus pin, RXD is pulled LOW to report the wake-up event. An external pullup resistor may be needed. ENABLE INPUT PIN (EN) The EN input pin controls the operation mode of the interface. If EN = 1, the interface is in Normal mode, with transmission path from TXD to LIN and from LIN to RXD both active. The threshold is 3.3 V and 5.0 V compatible. The high level at EN defines the VOH at RXD. The Sleep mode is entered by setting EN LOW while TXD is HIGH. Sleep mode is active after the t SD filter time (see Figure 14, 11). INHIBIT OUTPUT PIN (INH) The INH output pin may have two main functions. It may be used to control an external switchable voltage regulator having an inhibit input. The high drive capability also allows it to drive the bus external resistor in the master node application. This is illustrated in Figures 18 and 19, 17. In Sleep mode, INH is turned OFF. If a voltage regulator inhibit input is connected to INH, the regulator will be disabled. If the master node pullup resistor is connected to INH, the pullup resistor will be disabled from the LIN bus.

Analog Integrated Circuit Device Data Freescale Semiconductor 13 33661 FUNCTIONAL DESCRIPTION FUNCTIONAL PIN DESCRIPTION WAKE INPUT PIN (WAKE) The WAKE pin is a high-voltage input used to wake up the device from the Sleep mode. WAKE is usually connected to an external switch in the application. The typical wake thresholds are V SUP / 2. The WAKE pin has a special design structure and allows wake-up from both HIGH-to-LOW or LOW-to-HIGH transitions. When entering into Sleep mode, the LIN monitors the state of the WAKE pin and stores it as a reference state. The opposite state of this reference state will be the wake-up event used by the device to enter again into Normal mode. An internal filter is implemented (40 µs typical filtering time delay). WAKE pin input structure exhibits a high impedance, with extremely low input current when voltage at this pin is below 14 V. When voltage at the WAKE pin exceeds 14 V, input current starts to sink into the device. A serial resistor should be inserted in order to limit the input current mainly during transient pulses. Recommended resistor value is kΩ. Important The WAKE pin should not be left open. If the wake-up function is not used, WAKE should be connected to ground to avoid false wake-up.

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FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES As described below and depicted in Figure 15 and Table 5 on 15, the 33661 has two operational modes, Normal and Sleep. Normal mode may be adjusted to improve radiated emissions by changing the slew rate of the LIN bus output to Fast or Slow mode. In addition, there are two transitional modes: Awake Mode, which allows the device to go in Normal or Slow mode, and Wait Slow mode, which is a temporary state before the device enters the Slow mode. NORMAL MODE In the Normal mode, the 33661 has slew rate and timing compatible with the LIN protocol specification and operates from 1.0 kbps to 20 kbps. This mode is selected after Sleep mode by setting the TXD pin HIGH prior to setting EN from LOW to HIGH. Once Normal mode is selected, it is impossible to select the Slow mode unless the 33661 is set to Sleep mode. Slow Mode In the Slow mode, the slew rate is around half the normal slew rate, and bus speed operation ranges from 1.0 kbps to 10 kbps. The radiated emission is significantly reduced compared to the already excellent emission level of the Normal mode. Slow mode is entered after Sleep mode by setting the TXD pin LOW prior to setting EN from LOW to HIGH. Once the Slow mode is selected, it is impossible to select the Normal mode unless the device is set to Sleep mode. Fast Mode In the Fast mode, the slew rate is around 10 times faster than the Normal mode. This allows very fast data transmission (> 100 kbps) — for instance, for electronic control unit (ECU) tests and microcontroller program download. The bus pullup resistor might be reduced to ensure a correct RC time constant in line with the high baud rate used. Fast mode can be selected from either Normal or Slow mode. Fast mode is entered via a special sequence (called toggle function) as follows: TXD and EN pins set LOW, then TXD pulled HIGH, and at the EN pin LOW-to-HIGH transition, the device enters into the Fast Baud Rate. The duration of this sequence must be less than 35 µs. The toggle function is described in Figure 13, 11. Once in the Fast mode, two different procedures will bring the device back to the previously selected mode (Normal or Slow):

• The toggle function already described.
• A glitch on EN where t 2 < 5.0 µs also resets the device to the previously selected mode (Normal or Slow) (Figure 13). SLEEP MODE In the Sleep mode, the transmission path is disabled and the 33661 is in low power mode. Supply current from VSUP is very low. Wake-up can occur from LIN bus activity from node internal wake-up through the EN pin and from the WAKE input pin. In the Sleep mode, the 33661 has an internal 20 µA pullup source to VSUP. This avoids the high current path from the battery to ground in the event the bus is shorted to ground. (Refer to succeeding paragraphs describing wake-up behavior.) DEVICE POWER-UP (AWAKE TRANSITIONAL MODE) At power-up (VSUP rises from zero), the 33661 automatically switches to the Awake transitional mode. It switches the INH pin to HIGH state and RXD to LOW state. The MCU of the application will then confirm Normal or Slow mode by setting the TXD and EN pins appropriately. DEVICE WAKE-UP EVENTS The 33661 can be awakened from Sleep mode by three wake-up events:
• Remote wake-up via LIN bus activity
• Internal node wake-up via the EN pin
• Toggling the WAKE pin Remote Wake from LIN Bus (Awake Transitional Mode) The LIN bus wake-up is recognized by a recessive-to- dominant transition, followed by a dominant level with a duration greater than 70 µs, followed by a dominant-to- recessive transition. This is illustrated in Figures 11 and 12 on 11. Once the wake-up is detected, the 33661 enters the Awake transitional mode, with INH HIGH and RXD pulled LOW. Wake-Up from Internal Node Activity (Normal or Wait Slow Mode) The 33661 can wake up by internal node activity through a LOW-to-HIGH transition of the EN pin. When EN is switched from LOW to HIGH, the device is awakened and enters either the Normal or the Wait Slow transitional mode depending on the level of TXD input. The MCU must set the TXD pin LOW or HIGH prior to waking up the device through the EN pin. Wake-Up from WAKE Pin (Awake Transitional Mode) If the WAKE input pin is toggled, the 33661 enters the Awake transitional mode, with INH HIGH and RXD pulled LOW.

Figure 15. Operational and Transitional Modes State Diagram Table 5. Explanation of Operational and Transitional Modes State Diagram Sleep Mode Recessive state, driver off. 20 µA pullup current source. Awake Recessive state, driver off. LOW transition reports wake-up. Normal Mode Driver active. 30 kΩ pullup active. HIGH HIGH HIGH to enter Normal mode. to drive LIN bus in recessive.

• Low LIN bus dominant
• High LIN bus recessive Wait Slow Recessive state. Driver off. 30 kΩ pullup active. HIGH HIGH LOW HIGH Slow Driver active. 30 kΩ pullup active. Slew rate slow (10 kbps). HIGH HIGH LOW to enter Slow mode. Once in Slow mode: LOW to drive LIN bus in dominant, HIGH to drive LIN bus in recessive. Report LIN bus level:
• Low LIN bus dominant
• High LIN bus recessive Fast Driver active. 30 kΩ pullup active. Slew rate fast (> 100 kbps). HIGH HIGH LOW to drive LIN bus in dominant, HIGH to drive LIN bus in recessive. Report LIN bus level:
• Low LIN bus dominant
• High LIN bus recessive X = Don’t care. Power-Up Sleep Awake Wait Slow Normal Fast TXD HIGH and EN LOW > t1 (35 µs) TXD HIGH and EN LOW to LIN Bus or WAKE Pin TXD HIGH and EN LOW to HIGH TXD LOW and EN LOW to HIGH TXD LOW and EN TXD HIGH and EN LOW > t1 (35 µs) TXD HIGH EN LOW for t2 < 5.0 µs, then HIGH Wake-Up LOW to HIGH Toggle Function EN LOW for t2 < 5.0 µs, Toggle Function then HIGH EN LOW for t2 < 5.0 µs, then HIGH EN LOW for t2 < 5.0 µs, then HIGH Note Refer to Table 5 for explanation. HIGH (10 x) Fast (10 x) 1.0 to 20 kbps Slow 1.0 to 10 kbps

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Normal mode, optimized for baud rate up to 20 kbps. excellent level of the Normal mode. Figure 16. Radiated Emission in Normal Mode Figure 17. Radiated Emission in Slow Mode

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Important For the most current revision of the package, visit www.freescale.com and do a keyword search on the 98A drawing number below. D SUFFIX EF SUFFIX (PB-FREE) 8-PIN SOIC NARROW BODY PLASTIC PACKAGE 98ASB42564B ISSUE U

Table 6. Reference Documents

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REVISION HISTORY

REVISION DATE DESCRIPTION OF CHANGES 5.0 10/2006 • Implemented Revision History page

• Updated the Freescale format and style
• Added MCZ33661EF/R2 to the part number Ordering Information 6.0 11/2006 • Removed Peak Package Reflow Temperature During Reflow (solder reflow) parameter from MAXIMUM RATINGS on page 4. Added note with instructions from www.freescale.com.

Rev. 6.0 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc., 2006. All rights reserved. How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1-800-521-6274 or +1-480-768-2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7

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