MCTV35P60F1D INTERSIL | Alldatasheet
Document overview
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Technical content
Features
- 35A, -600V
- V TM = -1.35V (Max) at I = 35A and +150oC
- 800A Surge Current Capability
- 800A/µs di/dt Capability
- MOS Insulated Gate Control
- 50A Gate Turn-Off Capability at +150 oC
- Anti-Parallel Diode
Description
The MCT is an MOS Controlled Thyristor designed for switch- ing currents on and off by negative and positive pulsed control of an insulated MOS gate. It is designed for use in motor con- trols, inverters, line switches and other power switching appli- cations. The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss. MCTs allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junction temperatures up to +150 oC with active switching. This device features a discrete anti-parallel diode that shunts current around the MCT in the reverse direction without introducing carriers into the depletion region. Formerly developmental type TA9789 (MCT) and TA49054 (diode). PART NUMBER INFORMATION PART NUMBER PACKAGE BRAND MCTV35P60F1D TO-247 M35P60F1D NOTE: When ordering, use the entire part number. April 1999 Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified MCTV35P60F1D UNITS Continuous Cathode Current (See Figure 2) A A (0.063" (1.6mm) from case for 10s) 260 oC NOTE: 1. Maximum Pulse Width of 250µs (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC File Number 3694.4 PART WITHDRAWN PROCESS OBSOLETE - NO NEW DESIGNS