MCTV65P100F1 INTERSIL | Alldatasheet
Document overview
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Technical content
Features
- 65A, -1000V
- V TM ≤ -1.4V at I = 65A and +150oC
- 2000A Surge Current Capability
- 2000A/µs di/dt Capability
- MOS Insulated Gate Control
- 100A Gate Turn-Off Capability at +150 oC
Description
The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive voltage control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss. MCTs allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junc- tion temperatures up to +150 oC with active switching. Formerly TA9900. PART NUMBER INFORMATION PART NUMBER PACKAGE BRAND MCTV65P100F1 TO-247 M65P100F1 MCTA65P100F1 MO-093AA M65P100F1 NOTE: When ordering, use the entire part number. April 1999 Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified MCTV65P100F1 MCTA65P100F1 UNITS Continuous Cathode Current (See Figure 2) IK25 IK90 A A (0.063" (1.6mm) from case for 10s) TL 260 oC NOTE: 1. Maximum Pulse Width of 200µs (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC File Number 3516.5 PART WITHDRAWN PROCESS OBSOLETE - NO NEW DESIGNS