MCT9001 QT | Alldatasheet

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QT DUAL PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS CECE E ET en ee MCT9001 Ross 4 The MCT9001 is a two channel optocoupler in a 1 MAK standard, end stackable, 8 pin dual-in-line package. This 638 part offers the same packing density as 4 pin aT ox ‘optocouplers, while minimizing component count and tw. insertion costs. KC Pep y tT ab a8 vm inner

914 REF

= Two isolated channels per package 254 ® Two packages fit into a 16 lead DIP socket afin | fr 088 TP = Underwriters Laboratory (UL) recognized File E50151 fi i iy soe Paks WOOO 38 MAX APPLICATIONS —as | 356 ab ® High voltage isolation 17 305 MIN ® Ground loop elimination jc * 0.89 TYP = Transient protection | ase 2081 =| Common mode noise reduction T—aar pIMensions w = AC line to logic interface M mm = Telephone line receiver PACKAGE CODE G = Isolated feedback control = Logic to power interface ANODE or au caTH[2 | {7JEMIT. ANODE[3 | ‘aa COLL. caTH [a | [S]emir. INPUT DIODE (each channel) Collector current eee e eee eee cesses es SOMA Reverse voltage .. beveeeeeees 5.0V__ Input to output breakdown voltage < ++ 2500Vaus Peak forward current Total package power dissipation Derate linearly from 25°C .. see La mWPe

QT. DUAL PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS TS TYPICAL ELECTRICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Otherwise Specified) INDIVIDUAL COMPONENT CHARACTERISTICS CHARACTERISTICS ‘SYMBOL MIN. TP. MAX. UNITS TEST CONDITION INPUT DIODE Forward voltage Ve 1.0 13 v b=10 mA Junction capacitance CG 50 pF Vr=0V; f= 1MHz Reverse leakage current Ih 10 uA Wn=5.0V OUTPUT TRANSISTOR Breakdown voltage Collector to emitter BVcco 55 v 1.=0.5 mA; L=0 Emitter to collector BV eco 7 Vv 1=100 nA Leakage current Collector to emitter lexo 100 nA Vec=24V; h=0 50 HA Vee=24V; T.=85°C Capacitance Collector to emitter 8 PF Vee=0; f= 1MHz TRANSFER CHARACTERISTICS DC CHARACTERISTICS ‘SYMBOL MIN. TYP. MAX. UNITS TEST CONDITION Current transfer ratio CTRa 50 600 % L=5 MA; Ve=5 V Saturated current CT Ree wan 30 % L=8 mA; Va=.4V transfer ratio Saturation voltage Ves oan 0.4 v 1-=8 MA; =2.4 mA TRANSFER CHARACTERISTICS CHARACTERISTICS ‘SYMBOL MIN. TP. MAX. UNITS ‘TEST CONDITION SWITCHING TIMES Non-saturated Rise time t 24 us R.=1000; =2mA; Fall time t 24 ws Va=10V Turn on time te 3.0 HS R=1000; =2mA; Tum off time te 3.0 ws Ve=10V Saturated Turn on time by 24 us k=16 mA; R=1.9K0. Tum off time tr 25.0 us Vae=5V ‘CHARACTERISTICS ‘SYMBOL MIN. TP. MAX. UNITS TEST CONDITION Surge isolation voltage Vico 4000) VDC Relative humidity 550%; oS 104A ‘3000 VAC-ms _1 second Steady state isolation Vico 3500 VDC Relative humidity voltage $50%; ho 10uA

2500 VAC-ms 1 minute

Isolation resistance Riso 10" ‘ohms Vio=500 VDC Isolation capacitance Coo 05 pF_f=1MHz 4.470

QT! DUAL PHOTOTRANSISTOR OPTO: PLER OPTOELECTROMICS cou ———— TYPICAL ELECTRICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Otherwise Specified) ar a “<T SE" M Q N $ o9 a z eal i” 0102 05 1 2 5 10 20 50100 0 FORWARD CURRENT — Ir (mA) o 5 10 15 20 lp — (mA C1679 Current Forward Current 2 = sz | erent | | yeerday oH BE | | “CLEC ~~ \\ | ee E os \\ aCe 2 i ceeee// Aen 8 OO F COO g COA z 2) Y o (oP 4 Temperature Forward Current

QT DUAL PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS Oe _ TYPICAL ELECTRICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Otherwise Specified) (Cont'd) Voe = 10V - ¥ Woes GN Vce = 10V fo | (See Fig. 10 g gr? |—— 5 6 i eve ourPuT Z| oa gs N 2 3 T Fa i | ° 5 10 18 20 = Ie — (ma) C1685 c12964, PULSE WIDTH = 100 us DUTY CYCLE = 10% INPUT ov ! | 1 1 i} 1 ouTPuT | | 1 90% | ! ' 10% 1 !orrot Iota ' Fy ton MY tor C1294 Fig. 7. Switching Time Waveforms