MCT6 QT | Alldatasheet
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beers PHOTOTRANSISTOR OPTOCOUPLERS ——— ee MCT6 MCT62 MCT61 PACKAGE DIMENSIONS DESCRIPTION
1 The MCT6X optoisolators have two channels for high
a) hg) 4 density applications. For four channel applications, ad 15 Max two-packages fit into a standard 16-pin DIP socket. Each 6.86 channel is an NPN silicon planar phototransistor optically 635 036 coupled to a gallium arsenide infrared emitting diode. T] mH YF 1 028 rary ey 8.86. 7.62 17 REF
914 REF = Two isolated channels per package
= Two packages fit into a 16 lead DIP socket
8 Choice of 3 current transfer ratios
254 089 TYP = Underwriters Laboratory (U.L.) recognized File E50151 hee ry a laa? OE Genet WIG 388 max 36 = AC Line/Digital Logic—tsolate high voltage transients | SS ost ® Digital Logic/Digital Logic—Eliminate spurious 8M 308 grounds ; 0.89 TYP ® Digital Logic/AC Triac Control—tsolate high voltage oss 2091 transients Ta DIMENSIONS IN mm ™ Twisted ptr ine receiver—Elminte ground loop PACKAGE CODE G feedthroug| - = Telephone/Telegraph line receiver—Isolate high voltage transients ANODE ce “a EMT. = High Frequency Power Supply Feedback Control— Maintain floating ground cara [2h j7cou. = Relay contact monitor—Isolate floating grounds and cata [3] {6}cou. transients E. kK | = Power Supply Monitor—Isolate transients awooe|4] {5]EmIT. ; 2085 Equivalent Circuit ABSOLUTE MAXIMUM RATINGS Storage temperature vssrss+s ~55°C to 150°C INPUT DIODE (each channel) Operating temperature . —55°C to 100°C ~—- Forward current . . . 60 mA Total package power dissipation
DPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS ee ELECTRO-OPTICAL CHARACTERISTICS (25°C Free Air Temperature Unless Otherwise Specified) INDIVIDUAL COMPONENT CHARACTERISTICS CHARACTERISTICS ‘SYMBOL ‘MIN. TYP. ‘MAX. UNITS ‘TEST CONDITION INPUT DIODE Rated forward voltage Ve 1.25 1.50 v 1.=20mA Reverse voltage Va 3.0 25 v Ih=10 pA Reverse current In 001 10 wA Vn=3.0V Junction capacitance Cc, 50 pF V=0V OUTPUT TRANSISTOR (I,=0) Breakdown voltage, collector to emitter BV cro 30 85 Vv I=1.0 mA Breakdown voltage, emitter to collector BV eco 6 13 Vv 1e=100 pA Leakage current, collector to emitter eee 5 100 nA Vec=10V Capacitance collector to emitter Coe 8 pF Vce=0V TRANSFER CHARACTERISTICS ‘CHARACTERISTICS ‘SYMBOL MIN. ‘TYP. MAX. ‘UNITS: ‘TEST CONDITION COUPLED DC current transfer ratio (Ic/l,.)=CTR MCT6 20 % Vee=10 V, = 10 mA MCT61 50 % Vee=5 V, =5 mA MCT62 100 % Vce=5 V, L=5 mA Saturation voltage— collector to emitter Vor gan MCT6, 61, 62 0.2 04 Vv lc=2 MA, |-=16 mA. Sranacrenarcs SMOLIN ‘SWITCHING TIMES, OUTPUT TRANSISTOR Non-saturated rise time, fall time 24 us Ic=2 MA, Vee=10 V, (Note 3) R.=1000 Non-saturated rise time, fall time 15 us lo=2 MA, Vec=10 V, (Note 3) R=1kKO Saturated turn-on time (from 5.0V to 0.8V) 5 us R.=2KQ, | =40 mA Saturated turn-off time (from saturation to 2.0V) 25 ws R.=2KO, |-=40 mA Bandwidth By, 150 kHz l<=2 MA, Vce=10 V, R.=1000 ISOLATION CHARACTERISTICS GHURACTERSTICS SeMsL baa Te CONDITION Isolation voltage BV,.0) 2500 Vows t=1 minute Isolation resistance MCT6X— Reo 10° 10" a Vio=500 VDC Breakdown voltage—channel-to-channel MCT6X 500 VOC Relative humidity=40% f=1 MHz Capacitance between channels 0.4 pF
PPTOTLECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS ee TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Otherwise Specified) a [| 1 135 313 aor ai 5 g
30 Paa 8 050
FORWARD CURRENT — Ir (mA) o 6 10 16 20 lp — (mA) C1679 Current Forward Current z a = | rm wt TTT TT Ty Fa | Baek SCOTT feral Be op) “COCET Er] as dye HE g | 7 | co zoe COO 5 | OAC 0s (a? 4 Temperature Forward Current
OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS TS TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Otherwise Specified) (Cont'd) 12, w Voe = 10v - = (See Fig. 10 @ )<10 | pee zZ JE i = | 5=|5 | evs outPuT % | 08 t gs Fs | 24 if an | Fe S 2 | 0 5 10 18 20 = Ic — (mA) C1685 C1296A PULSE WIDTH = 100 us DUTY CYCLE = 10% INPUT ov | | ' | | 1 OUTPUT | | I 90% | ' 1 10% 1 [ttt I Lt I Fy ton PRY to 1294 Fig. 7. Switching Time Waveforms 1. Normalized CTR degradation = crn Ta 2. The current transfer ratio (1./l,) is the ratio of the detector collector current to the LED input current with Vc. at 10 volts. 3. The frequency at which i- is 3 dB down from the 1 kHz value. 4. Rise time (t, is the time required for the collector current to increase from 10% of its final value to 90%. Fall time (t) is the time required for the collector current to decrease from 90% of its initial value to 10%.