MCT5211M

MCT5201M_0810 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

CE(SAT) comparable to Darlingtons CTR guaranteed 0°C to 70°C High common mode transient rejection 5kV/µs Data rates up to 150kbits/s (NRZ) Underwriters Laboratory (UL) recognized, file #E90700, volume 2 IEC60747-5-2 approved (ordering option V)

Applications

CMOS to CMOS/LSTTL logic isolation LSTTL to CMOS/LSTTL logic isolation RS-232 line receiver Telephone ring detector AC line voltage sensing Switching power supply

Description

The MCT52XXM series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package. The MCT52XXM is well suited for CMOS to LSTT/TTL interfaces, offering 250% CTR CE(SAT) with 1mA of LED input current. When an LED input current of 1.6mA is supplied data rates to 20K bits/s are possible. The MCT52XXM can easily interface LSTTL to LSTTL/ TTL, and with use of an external base to emitter resistor data rates of 100K bits/s can be achieved. Schematic

5 COL

4 EMITTER

©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0 2 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameters Value Units TOTAL DEVICE T STG Storage Temperature -55 to +150 °C T OPR Operating Temperature -40 to +100 °C T SOL Lead Solder Temperature 260 for 10 sec °C P D Total Device Power Dissipation @ 25°C (LED plus detector) 260 mW Derate Linearly From 25°C 3.5 mW/°C EMITTER I F Continuous Forward Current 50 mA V R Reverse Input Voltage 6 V I F (pk) Forward Current - Peak (1 µs pulse, 300 pps) 3.0 A P D LED Power Dissipation 75 mW Derate Linearly From 25°C 1.0 mW/°C DETECTOR I C Continuous Collector Current 150 mA P D Detector Power Dissipation 150 mW Derate Linearly from 25°C 2.0 mW/°C

©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0 3 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

Electrical Characteristics

A = 25°C unless otherwise specified) Individual Component Characteristics Isolation Characteristics *All typical T A = 25°C Symbol Parameters Test Conditions Device Min. Typ.* Max. Units EMITTER V F Input Forward Voltage I F = 5mA All 1.25 1.5 V V F T A Forward Voltage Temp. Coefficient I F = 2mA All -1.75 mV/°C V R Reverse Voltage I R = 10µA All 6 V C J Junction Capacitance V F = 0V, f = 1.0MHz All 18 pF DETECTOR BV CEO Collector-Emitter Breakdown Voltage I C = 1.0mA, I F = 0 All 30 100 V BV CBO Collector-Base Breakdown Voltage I C = 10µA, I F = 0 All 30 120 V BV EBO Emitter-Base Breakdown Voltage I E = 10µA, I F = 0 All 5 10 V I CER Collector-Emitter Dark Current V CE = 10V, I F = 0, R BE = 1M Ω All 1 100 nA C CE Capacitance, Collector to Emitter V CE = 0, f = 1MHz All 10 pF C CB Capacitance, Collector to Base V CB = 0, f = 1MHz All 80 pF C EB Capacitance, Emitter to Base V EB = 0, f = 1MHz All 15 pF Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units V ISO Input-Output Isolation Voltage (10) f = 60Hz, t = 1 sec. All 7500 Vac(peak) R ISO Isolation Resistance (10) V I-O = 500 VDC, T A = 25°C All 10 Ω C ISO Isolation Capacitance (9) V I-O = 0, f = 1 MHz All 0.4 0.6 pF CM H Common Mode Transient V CM = 50 V P-P1 , R L = 750 Ω I F = 0 MCT5210M/11M 5000 V/µs Rejection – Output HIGH V CM = 50 V P-P , R L = 1K Ω I F = 0 MCT5201M CM L Common Mode Transient V CM = 50 V P-P1 , R L = 750 Ω I F =1.6mA MCT5210M/11M 5000 V/µs Rejection – Output LOW V CM = 50 V P-P1 , R L = 1K Ω I F = 5mA MCT5201M

©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0 4 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers (Continued) A = 25°C unless otherwise specified) Transfer Characteristics *All typicals at T A = 25°C Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units DC CHARACTERISTICS CTR CE(SAT) Saturated Current Transfer Ratio (1) (Collector to Emitter) I F = 5mA, V CE = 0.4V MCT5201M 120 % I F = 3.0mA, V CE = 0.4V MCT5210M 60 I F = 1.6mA, V CE = 0.4V MCT5211M 100 I F = 1.0mA, V CE = 0.4V 75 CTR (CE) Current Transfer Ratio (Collector to Emitter) (1) I F = 3.0mA, V CE = 5.0V MCT5210M 70 % I F = 1.6mA, V CE = 5.0V MCT5211M 150 I F = 1.0mA, V CE = 5.0V 110 CTR (CB) Current Transfer Ratio Collector to Base (2) I F = 5mA, VCB = 4.3V MCT5201M 0.28 % IF = 3.0mA, VCE = 4.3V MCT5210M 0.2 IF = 1.6mA, VCE = 4.3V MCT5211M 0.3 IF = 1.0mA, VCE = 4.3V 0.25 VCE(SAT) Saturation Voltage I F = 5mA, ICE = 6mA MCT5201M 0.4 V IF = 3.0mA, ICE = 1.8mA MCT5210M 0.4 IF = 1.6mA, ICE = 1.6mA MCT5211M 0.4 AC CHARACTERISTICS TPHL Propagation Delay HIGH-to-LOW(3) RL = 330 Ω, RBE = ∞ IF = 3.0mA, VCC = 5.0V MCT5210M 10 µs RL = 3.3 kΩ, RBE = 39kΩ 7 RL = 750 Ω, RBE = ∞ IF = 1.6mA, VCC = 5.0V MCT5211M 14 RL = 4.7 kΩ, RBE = 91kΩ 15 RL = 1.5 kΩ, RBE = ∞ IF = 1.0mA, VCC = 5.0V RL = 10 kΩ, RBE = 160kΩ 24 VCE = 0.4V, VCC = 5V, RL = fig. 13, RBE = 330kΩ IF = 5mA MCT5201M 3 30 TPLH Propagation Delay LOW-to-HIGH(4) RL = 330 Ω, RBE = ∞ IF = 3.0mA, VCC = 5.0V MCT5210M 0.4 µs RL = 3.3 kΩ, RBE = 39kΩ 8 RL = 750 Ω, RBE = ∞ IF = 1.6mA, VCC = 5.0V MCT5211M 2.5 RL = 4.7 kΩ, RBE = 91kΩ 11 RL = 1.5 kΩ, RBE = ∞ IF = 1.0mA, VCC = 5.0V RL = 10 kΩ, RBE = 160kΩ 16 VCE = 0.4V, VCC = 5V, RL = fig. 13, RBE = 330kΩ IF = 5mA MCT5201M 12 13 td Delay Time(5) VCE = 0.4V, RBE = 330kΩ, RL = 1 kΩ, VCC = 5V IF = 5mA MCT5201M 1.1 15 µs tr Rise Time(6) VCE = 0.4V, RBE = 330kΩ, RL = 1 kΩ, VCC = 5V IF = 5mA MCT5201M 2.5 20 µs ts Storage Time(7) VCE = 0.4V, RBE = 330 kΩ, RL = 1 kΩ, VCC = 5V IF = 5mA MCT5201M 10 13 µs tf Fall Time(8) VCE = 0.4V, RBE = 330 kΩ, RL = 1 kΩ, VCC = 5V IF = 5mA MCT5201M 16 30 µs

©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0 5 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers Notes: 1. DC Current Transfer Ratio (CTR CE) is defined as the transistor collector current (ICE) divided by the input LED current (IF) x 100%, at a specified voltage between the collector and emitter (VCE). 2. The collector base Current Transfer Ratio (CTR CB) is defined as the transistor collector base photocurrent(ICB) divided by the input LED current (IF) time 100%. 3. Referring to Figure 14 the T PHL propagation delay is measured from the 50% point of the rising edge of the data input pulse to the 1.3V point on the falling edge of the output pulse. 4. Referring to Figure 14 the T PLH propagation delay is measured from the 50% point of the falling edge of data input pulse to the 1.3V point on the rising edge of the output pulse. 5. Delay time (t d) is measured from 50% of rising edge of LED current to 90% of Vo falling edge. 6. Rise time (t r) is measured from 90% to 10% of Vo falling edge. 7. Storage time (t s) is measured from 50% of falling edge of LED current to 10% of Vo rising edge. 8. Fall time (t f) is measured from 10% to 90% of Vo rising edge. 9. C ISO is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pin 4, 5, 6 connected). 10. Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted together.

©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0 6 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers Typical Performance Curves Fig. 1 LED Forward Voltage vs. Forward Current Fig. 2 Normalized Current Transfer Ratio vs. Forward Current Fig. 3 Normalized CTR vs. Temperature Fig. 4 Normalized Collector vs. Collector - Emitter Voltage Fig. 5 Normalized Collector Base Photocurrent Ratio vs. Forward Current Fig. 6 Normalized Collector - Base Current vs. Temperature 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.1 1 10 VF - FORWARD VOLTAGE (V) 0.1 0.01 0.001 0.0001 100 0.1 0.01 0.1 0.01 0.001 NORMALIZED CURRENT TRANSFER RATIO NORMALIZED ICB - COLLECTOR BASE PHOTO CURRENT NORMALIZED - COLLECTOR BASE CURRENT NORMALIZED ICE - COLLECTOR - EMITTER CURRENT NORMALIZED CURRENT TRANSFER RATIOIF - LED FORWARD CURRENT (mA) TA - AMBIENT TEMPERATURE (°C) TA - AMBIENT TEMPERATURE (°C)IF - FORWARD CURRENT (mA) VCE - COLLECTOR - EMITTER VOLTAGE (V) IF - FORWARD CURRENT (mA) 100 0.1 -20 0 20 40 60 -60 -40 -20 0 20 40 60 80 100 0.1 1 10 0.1 1 100 10 11 0 TA = -40°C TA = 25°C TA = 100°C IF = 2mA IF = 1mA IF = 0.5mA IF = 0.2mA : Normalized to: IF = 5mA VCE = 5V TA = 25°C IF = 0.2 mA IF = 0.5 mA IF = 1 mA IF = 2 mA IF = 5 mA IF = 10 mA Normalized to: IF = 5mA VCB = 4.3V TA = 25°C Normalized to: IF = 5mA VCB = 4.3V TA = 25°C IF = 0.2 mA IF = 0.5 mA IF = 1 mA IF = 2 mA IF = 5 mA IF = 10 mA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Normalized to: IF = 5mA VCE = 5V TA = 25°C -40 -20 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Normalized to: IF = 5mA VCE = 5V TA = 25°C IF = 10mA IF = 5mA

©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0 7 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers Typical Performance Curves (Continued) Fig. 7 Collector-Emitter Dark Current vs. Ambient Temperature Fig. 8 Switching Time vs. Ambient Temperature Fig. 9 Switching Time vs. Ambient Temperature Fig. 10 Switching Time vs. Ambient Temperature Fig. 11 Switching Time vs. Ambient Temperature Fig. 12 Switching Time vs. Base-Emitter Resistance 01 0 2 0 3 0 4 0 5 06 07 08 0 9 0 10000 1000 100 0.1 ICEO - DARK CURRENT (nA) TA - AMBIENT TEMPERATURE (°C) T A - AMBIENT TEMPERATURE (°C) 100 120-40 -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (°C) 120-40 -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (°C) 120-20-40 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (°C) BASE-EMITTER RESISTANCE - R BE (kΩ) -40 -20 0 20 40 60 80 100 120 IF = 0mA VCE = 10V SWITCHING TIME - t (µs) SWITCHING TIME - t (µs) SWITCHING TIME - t (µs) SWITCHING TIME - t (µs) SWITCHING TIME - t (µs) 10 100 1000 10000 100 tPHL tPLH tf ts tr td IF = 10mA VCC = 5V RL = 1K RBE = 330K Refer to Figure 13 for switching time circuit tPHL tPLH tf ts tr td IF = 10mA VCC = 5V RL = 1K RBE = 100K Refer to Figure 13 for switching time circuit tPHL tPLH tf ts tr td IF = 5mA VCC = 5V RL = 1K RBE = 330K Refer to Figure 13 for switching time circuit tPHL tPLH tf ts tr td IF = 5mA VCC = 5V RL = 1K RBE = 100K Refer to Figure 13 for switching time circuit t VCC = 5V TA = 25°C tPHL, IF = 3mA, RL = 3.3K t t PLH, IF = 1mA, RL = 10K tPHL, IF = 1mA, RL = 10K PHL, IF = 1.6mA, RL = 4.7K tPLH IF = 1.6mA RL = 4.7K tPLH IF = 3mA RL = 3.3K

©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0 9 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers Package Dimensions Through Hole Surface Mount 0.4" Lead Spacing Recommended Pad Layout for Surface Mount Leadform Note: All dimensions are in inches (millimeters) 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.390 (9.90) 0.332 (8.43) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.320 (8.13) 0.035 (0.88) 0.006 (0.16) 0.012 (0.30) 0.008 (0.20) 0.200 (5.08) 0.115 (2.93) 0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] PIN 1 ID SEATING PLANE 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.320 (8.13) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.012 (0.30) Pin 1 ID SEATING PLANE 0.350 (8.89) PIN 1 ID 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.070 (1.77) SEATING PLANE 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.100 (2.54) 0.015 (0.38) 0.012 (0.30) 0.008 (0.21) 0.425 (10.80) 0.400 (10.16) 0.070 (1.78) 0.060 (1.52) 0.030 (0.76) 0.100 (2.54) 0.305 (7.75) 0.425 (10.79)

©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0 10 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

Ordering Information

Order Entry Identifier (Example) Description No suffix MCT5201M Standard Through Hole Device (50 units per tube) S MCT5201SM Surface Mount Lead Bend SR2 MCT5201SR2M Surface Mount; Tape and Reel (1,000 units per reel) T MCT5201TM 0.4" Lead Spacing V MCT5201VM IEC60747-5-2 TV MCT5201TVM IEC60747-5-2, 0.4" Lead Spacing SV MCT5201SVM IEC60747-5-2, Surface Mount SR2V MCT5201SR2VM IEC60747-5-2, Surface Mount, Tape and Reel (1,000 units per reel) *Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. Definitions 1F airchild logo 2D evice number

3 VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table) 4 One digit year code, e.g., ‘7’ 5T wo digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0 11 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers Carrier Tape Specification Reflow Profile 4.0 ± 0.1 Ø 1.5 MIN User Direction of Feed 2.0 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 24.0 ± 0.3 12.0 ± 0.1 0.30 ± 0.05 21.0 ± 0.1 4.5 ± 0.20 0.1 MAX 10.1 ± 0.20 9.1 ± 0.20 Ø 1.5 ± 0.1/-0 300 280 260 240 220 200 180 160 140 120 100 Time (s) 0 60 180120 270 260°C >245°C = 42 Sec Time above 183°C = 90 Sec 360 1.822°C/Sec Ramp up rate

33 Sec

©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0 12 TRADEMARKS Thef ollowing includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EZSWITCH™ * Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter®* FPS™ FRFET Global Power Resource SM Green FPS™ Green FPS™e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC OPTOPLANAR® PDP-SPM™ Power220® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™ -6 SuperSOT™ -8 SupreMOS™ SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC Ultra FRFET™ UniFET™ VCX™ *E Z S W ITCH™ and FlashWriter ® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHERDOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I33 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers