MCT5210

MCT5210 QT | Alldatasheet

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QT | HIGH-PERFORMANCE AlGaAs OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS OO OO MCT5210 MCT5211 en PACKAGE DIMENSIONS aaa The MCT-521X are high performance CMOS/LSTTL logic z >> compatible phototransistor type optically coupled isolator 83 ‘15° MAX products. They are constructed using a very low MAX 685 degradation and high-efficiency AlGaAs, infrared emitter, : 03 coupled to a photoefficient high gain NPN Ome f 02 phototransistor in a six pin dual-in-line package. This Mag _ oh package provides a minimum of 5300 VAC Withstand 889 1 as F Test Insulation, and 5000 V/s common mode transient 838 238 rejection. The MCT-5211 is well suited for CMOS to LSTT/TTL 254, 19 interfaces, for it offers 250% CTReesxy with 1 mA of LED i a TYP input current. When an LED input current of 1.6 mA is Co Vas supplied data rates to 20K bits/s are possible. Le aa + MAX The MCT-5210 can easily interface LSTTL to LSTTL/TTL, = and with use of an external base to emitter resistor data yan i rates of 100 K bits/s can be achieved. atl 150 056 124

040 DIMENSIONS IN mm @ High CTReca Comparable to Darlingtons

PACKAGE CODE K STI603A ™ CTR guaranteed 0°C to 70°C © High common mode transient rejection—5 kV/us = Data rates up to 50 kbits/s (NRZ) = Underwriters Laboratory (UL) recognized file #€90700 camulah Igloo = CMOS to CMOS/LSTTL logic isolation LSTTL to CMOS/LSTTL logic isolation = RS-232 line receiver [3] 14]EMIT. ™ Telephone ring detector ™ AC line voltage sensing 2079 Equivalent Circuit ABSOLUTE MAXIMUM RATINGS TOTAL PACKAGE INPUT DIODE Operating temperature ... -». ~55°C to 100°C Reverse voltage nee we eeeeee ee BV Derate linearly from 25°C ceccees 2.67 MW/°C

QT HIGH PERFORMANCE AlGaAs OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS Leen Forward voltage ve 1315 V_k=SmA 1 coefficient voltage Junction capacitance c 18 PF _V;=OV, f=1 MHz OUTPUT TRANSISTOR oO gain Pream 350 — Vee=0.4V, ke=2mA 89 Collector to emitter BVeco 90S V__k=1.0mAb=0 Collector to emitter been 100 AA Vee=10V, =0, Rac=1 MOD Capacitance c Collector to emitter 10 PF Vec=0, f=1 MHZ Collector to base 80 PF Veg=0, f=1 MHz Emitter to base 15 PF Vaa=0,f=1 MHz " (T,=0°C to 70°C Unless Otherwise Specified) Saturated current, MCTS210__60__350 % _b=3.0mA,Va=04V 2 Transfer ratio CTRess MCTS211 100 300 % _W=1.6mA,Va=04V 3001 (Collector to emitter) 75250 % _W=1.0mA,Va=04V Current transfer ratio MCTS210 70 400 %__4=3.0mMA, Va=5.0V 5 (Collectorto emitter) © CTRa~——«MCTS211 150 350 % _W=1.6MA, Veae=5.0V ao Current transter ratio MCTS210 02 09 % __b=3.0MA,Va=a3V 6 (Collector to base) CTR MCTS211._— «03 (0.75 % _W=1.6MA,Va=43V 7 2 (Collector to emitter) moTs211 0204 V__b=.6mA la=16mA *Alltypicals T,=25°C

QT HIGH PERFORMANCE AlGaAs OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS a EE eel SWITCHING CHARACTERISTICS (1,=25°C Uniess Otherwise Specified) CHARACTERISTICS SYMBOL DEVICE MIN TYP MAX UNITS TEST CONDITIONS FIG. NOTE 10 uS R.=330 0, Rec=o 1.=3.0mA MCT-5210 12 us R.=3.3 K, Ree=39K Voc=5.0V 20 us R.=750 2, Rec= =1.6 mA 12 3 Propagation delay H-L tre MCT-5211 25 us R.=4.7 K, Re=91K Veo=5.0 V 13 40 ws RE15K, Reso 1=1.0 mA 45 us R=10K, R= 160K Vec=5.0V 10 Bs R.=330 0, Ree= oo -=3.0 mA MCT-5210 12 us R.=3.3 K, Ree=39K Vec=5.0 V 20 us R.=750 2, Ree=2 =1.6 mA Propagation delay LH tay MCT-S211 25 us R=ATK, Re=91K Ve=50V 12 4 40 ws R=15K,Re=e =1.0mA 13 45 us _R.=10K, Re=160K Vec=5.0 V ISOLATION CHARACTERISTICS (1,=0°C Unless Otherwise Specified) ‘CHARACTERISTICS ‘SYMBOL MIN __TYP___MAX __ UNITS ‘TEST CONDITIONS FIG. NOTE Common mode transient cM, 5000 vis Vow=50 Vee: RL=750 0 Rejection - output high =0 14 Common mode transient cM 5000 vwius — Vew=50,, RL=750 0 Rejection - output low 1=1.6 mA ‘Common mode coupling Com 02 pF 14 5 capacitor Package capacitance Go 07 PF Vio=0, f= 1 MHz é input/output Withstand insulation Veo 5300 Vaceue, 7 CO oon No WA, ir test voltage Ve 7500 Ven best MA, 1 minute insulation resistance Rao 10" Ohms Vio=500V 1. DC Current Transfer Ratio (CTRc«) is defined as the transistor collector current (I-<) divided by the input LED current (1,) x 100%, at a ‘specified voltage between the collector and emitter (Vex). 2. The collector base Current Transfer Ratio (CTR) is defined as the collector base photocurrent (I-a) divided by the input LED current (1,) time 100%. 3. Referring to Figure 13 the tex propagation delay is measured from the rising edge of the data input (A) to the rising edge of the rising ‘edge of the data output (B). 4, Referring to Figure 13 the tr», propagation delay is measured from the falling edge of data input (A) to the falling edge of the data output (B). 5. Cow's the capacitance between the LED (input assembly) to the base of the phototransistor. 6. C.o is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pins 4, 5, 6 connected). 7. Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6, and 7 are shorted together.

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ot LUT TTT TTT) $ osL oP Conn orn 10 412 14 16 18 20 01 10 10 100 Ve — FORWARD VOLTAGE — V ip—FORWARD CURRENT—mA C1835 C1836 Forward Current Ratio vs, Forward Current up Tee <« COLL = ab ism e COPeeeeey gis Voe=0.4V I oP Siete ss | Fe ee es Beet as | i 5“ | 8 10 — ra eee ooo «eT ts | oo A es S10 PEERS ge Be 07 ~ cal al es | Seo Loa 3 ees oss |_| . Anan OO aM cep one, | 912345678910 vs. TEMPERATURE "C1697 Vee — COLLECTOR EMITTER — hoe Fig. 3. Normalized CTR Fig. 4. DC Characteristics vs. Temperature MCT5210 < [ | Te (mA) ro ooo ooo € 30 A AA zt | 1 |r . goo UN ZC 5 (3 g. SSS AAR Ee 20 — 40 85 a Pt+ysfs Boao S45 —_- 3 28 oe Fag Py 1S aay ah 2 eS Sts Be aero TT ad A a eb vo Ah a edd s BRK pe Saas Sees = Os ESR o 1 2 3 4 5 6 7 O71 1.0 10 100 Vce — COLLECTOR EMITTER aheo ip — FORWARD CURRENT Bho Fig. 5. DC Characteristics MCT5211 Fig. 6. Collector Base Photocurrent vs. Forward Current 1-170

QT HIGH-PERFORMANCE AlGaAs OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS EOE OOO TYPICAL ELECTRO-OPTICAL CHARACTERISTICS (T,=25°C Unless Otherwise Specitied) (Cont'd) 50) a Ee ae ty SS é 40 ain a ——— E - Pot es wa a ae a eo oe ee A 33, ae gi |e re 88,0 some 4) a ——— Re |e # ee SS ed a , Jee eee g | a c a an 20 0 2 s0 75 100 o 1 2 3 4 5 6 Ta = AMBIENT TEMPERATURE — °C. Vce—COLLECTOR-EMITTER—V o1e8s ibe Fig. 7. Normalized Collector Base Fig. 8. Transistor DC Characteristics Photocurrent vs. Temperature ae « CELT TTT TT Te mal a a V olf 6 dt Pepe eee qe Eft ts | Sift Pn eee So SSS See to ge ee Spr es | 8° LL 4 1 4 8 CARRERE ES Ey -==—=====555) oi TITi ti TTT) Oe ah REM TrER. * oe—BASE EMITTER VOLTAGE—v a oe = Vce — COLLECTOR EMITTER Sites G1e7 vs. Temperature Base Emitter Voltage 100 === q far2ec Poa COOCeeeeeee 3 00 TTA oo 05 0 ees 5 100 a2 MLL 3 AS

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QT HIGH-PERFORMANCE AlGaAs OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS ed TYPICAL ELECTRO-OPTICAL CHARACTERISTICS (T,=25°C Unless Otherwise Specified) (Cont'd) Vee =5.0V Veco = 50V Re McTs21x “Q Rae RL GF oS . ey ; LSTTL gq > cmos 74L805 74014 TYPICAL SWITCHING TIME Ta = 25°C We | A | Ree | tm [tun | Oat] INPUT A APA ed beabedte) roles T 15] = | 40 [ao] 325] 10/39 | 10 | 180 [a8 | as] 1 | tev Neur 16120 750 = | 20 | 20 | 25 | | (a =I h6[20 [a7 91 | 25 | 2s | 20 ourrure ~ gona Tate fie Tie oe fols1 13s [39 12 | 12] 4 | ©1850 Fig. 13. Switching Speed Test Circuit ‘oo | & e000 m= 7s0n fC ee 8 > 5000] i = 1.6 mA. z Vox = 2.0 V. i toto a0m 334m yore ey HG & fren -[ \\s = 000 wi} 2 le PY sv 85 | | |_| | ft | 4 JS] Seen ata 7 ¥ Lomten 8 SF wo SSL LT | LL TTT 1000 2000 3000 4000 6000 6000 Vom—COMMON MODE TRANSIENT AMPLITUDE—V C1852 Fig. 14. Common Mode Transient Rejection & Test Circuit