MCT5200

MCT5200 QT | Alldatasheet

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QT HIGH-PERFORMANCE AlGaAs OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS HEEL ead MCT5200 MCT5201 “ PACKAGE DIMENSIONS | DESCRIPTION aoa The MCT520x are high performance logic compatible b = phototransistor type optically coupled isolator products. 15° MAX They are constructed using a very low degradation and 83 686 high-efficiency AlGaAs, 890 nm infrared emitter, coupled MAX 6.10 03 toa high speed NPN phototransistor, in a six-pin dual-in- rr] line package. They provide a very high current transfer OmAmE! 1 ratio (CTR), high switching speed and 5300 VAC RMS bd L =a withstand test voltage performance. The critical circuit 889 bad - design parameters of CTR and CTR.» are guaranteed 838 ‘REF over a temperature range of 0-70°C resulting in guaranteed switching propagation delays when ase 13 interfaced to LSTTL logic. ve || TVP The MCT5201 has a minimum saturated CTR of 120% for i a LED input current of 5 mA. Maximum LSTTL interface Eee 406 53 propagation delays of 30 ys are guaranteed with the use Lena f + MAX of an external 330K resistor between the base and eo emitter. The MCT5200 is specified for a minimum 254 4 saturated CTR of 75% for an input current of 10 mA. MIN = fe ate 150 056 124 040 DIMENSIONS IN mm © High CTR. an comparable to Darlingtons PACKAGE CODE K ‘STI603A ™ Guaranteed switching speed with LSTTL load = Performance guaranteed over 0°C to 70°C = High common mode rejection—5 kV/us = Data rates up to 150 kbits/s (NRZ) = Underwriters Laboratory (UL) recognized file #E90700 = LSTTL digital logic isolation car isleou = IEEE 488 isolated inputs = Switching power supply (3) {4]eMIT. ® High speed industrial interfaces § Isolated microprocessor inputs 2073 Equivalent Circuit TOTAL PACKAGE INPUT DIODE

QT HIGH-PERFORMANCE AlGaAs OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS LEE INDIVIDUAL COMPONENT CHARACTERISTICS (1,=25°C Unless Otherwise Specified) INPUT DIODE Forward voltage v 13 15 v W=5mA 1 Forward voltage _ m - coefficient AV IAT. 1.9 mvrC -=2mA 1 Junction c 18 pr M=OV, fat MHz capacitance 112 Ve=1V, f=1 MHz OUTPUT TRANSISTOR DC forward Vee=0.4 V, current gain Decisan 400 - la=6 mA a9 Breakdown voltage Collector to emitter BV eco 30 45 v [.=1.0 mA, =0 Collector to base BV 30 70 Vv 1=10 nA, = Emitter to base BVis0 5 7 v [=10 pA Leakage Collector to emitter lean 5 100 MA Vee=10V, b=0, R= 1 MO 1" Capacitance Collector to emitter c 8 PF Vec=0, f=1 MHz Collector to base 20 PF Vas=5,f=1 MHz 12 Emitter to base 7 PF Va=0,f=1 MHz TRANSFER CHARACTERISTICS (Over Recommended Temperature, T,=0°C to 70°C Unless Otherwise Specified) ‘Saturated current, _ Z raoirneeneel CTR, —MCTS200___ 75180 % __b=10 MA, Voe=0.4V 234 4 (collector to emitter) MCTS201 120-225 % b=5.0MAVa=04V 2,3,5 Gurrenttranster ratio Crp MCT5200 200 % _L=10 MA, Vea=5.0V 1 (Collector to emitter) “_"McTs201 300 % _b=5mMA, Va=5.0V Gurrenttransterratio Gra _MCTS200_ 02 03 % b= 10 MA, Veg=4.3V 2 (collector to base) MCTS201 0.28 0.5 % _b=5.0MA, Va=4.3V 67 Saturation voltage V MCTS200 0204 VV b=10mA,la=7.5mA (Collector to emitter) “en MCTs201 02 04 VV __h=SMA,la=6mA *Alltypicals T,=25°C

QT HIGH-PERFORMANCE AlGaAs OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS EE EO SWITCHING CHARACTERISTICS (Over Recommended Temperature, T.=0°C to 70°C Unless Otherwise Specified) ‘AC CHARACTERISTICS SYMBOL MIN. ‘TYP.* MAX. UNITS: ‘TEST CONDITIONS FIG. NOTE MCT-5200 Delay time & 3 7 us Rise time L 2 6 us 1,=10 MA, Voe=0.4 V 34 2 1 ¥ " Storage time t 1 8 us Vec=5.0V 56 us Fall time t 17 30 >| 1-=10 MA, Vor=0.4 V Propagation delay L+H to HS 13 20 uS Rue=330K MCT-5201 Delay time & 7 15 us 1,=5 MA, Ve=0.4V Rise time x 6 20 HS .=1.0 K, Ree=330 K 13,18 34 Storage time t 8 13 us Vur50V 56 HS Fall time t 19 30 z =5 MA, Va=0.4V Propagation delayH*L_ tna 12 30 HSV SOV, R=(Fig. 18) 7 Propagation delay LH ten 8 13 us Rec =330 K *All typicals T,=25°C ISOLATION CHARACTERISTICS (1,=25°C Unless Otherwise Specified) ‘CHARACTERISTICS SYMBOL MIN. ‘TYP. MAX. UNITS: TEST CONDITIONS FIG. NOTE ‘Common mode = rejection— cM, 5000 vius yous 17 output high .=1 KD, b= ‘Common mode Veu=50V, rejection— cm, 5000 vius = 50V eo _ output low R.=1 KN, b=5 mA Common mode coupling capacitor bid 02 PF 8 Package capacitance ote input/output Co 07 pF Vio=0, f= 1 MHz 9 Withstand insulation Ves 5300 Vics) hot uA, 1 minute 10 8 test voltage Vio 7500 Vices bot wA, 1 minute 10 8 Insulation resistance Reso 10" Ohms Vio=500 V 1. DC current transfer ratio (CTR) is defined as the transistor collector current (lc) divided by input LED current (,)x 100%, ata specified voltage collector to emitter (Vee). 2. Current transter ratio is defined as the collector to base photocurrent (I) divided by the input LED current (I, times 100%. 3. Switching delay time (t) is measured for 50% of LED current to 90% falling edge of V 4. Rise time (t) is measured from the 90% to 10% of V. falling edge. 5. Storage time (t,) is measured from 50% of falling edge of LED current to 10% of rise edge of Vo. 6. Fall time (t) is measured from the 10% to 90% of the rising edge of Vo. 7. The tay propagation delay is measured from 50% point on the falling edge of the input pulse to the 1.3 V point on the rising edge of the output pulse. The tmx propagation delay is measured from 50% point on the rising edge of input to 1.3 V point on falling edge of output pulse. 8. Device considered a two terminal device: Pins 1, 2, and 3 are shorted together. Pins 4, 5, and 6 are shorted together.

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