MCT5200 FAIRCHILD | Alldatasheet

Document overview

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  • PDF pages: 11

Technical content

Features

  • High CTR CE(SAT) comparable to Darlingtons
  • CTR guaranteed 0°C to 70°C
  • High common mode transient rejection 5kV/µs
  • Data rates up to 150 kbits/s (NRZ)
  • Underwriters Laboratory (UL) recognized (file #E90700)
  • VDE recognized (file #94766) – Add option 300 (e.g., MCT5211.300)

Applications

  • CMOS to CMOS/LSTTL logic isolation
  • LSTTL to CMOS/LSTTL logic isolation
  • RS-232 line receiver
  • Telephone ring detector
  • AC line voltage sensing
  • Switching power supply Parameters Symbol Device Value Units TOTAL DEVICE Storage Temperature T STG All -55 to +150 °C Operating Temperature T OPR All -55 to +100 °C Lead Solder Temperature T SOL All 260 for 10 sec °C Total Device Power Dissipation @ 25°C (LED plus detector) P D All 260 mW Derate Linearly From 25°C 3.5 mW/°C EMITTER Continuous Forward Current I F All 50 mA Reverse Input Voltage V R All 6 V Forward Current - Peak (1 µs pulse, 300 pps) I F (pk) All 3.0 A LED Power Dissipation P D All 75 mW Derate Linearly From 25°C All 1.0 mW/°C DETECTOR Continuous Collector Current I C All 150 mA Detector Power Dissipation P D All 150 mW Derate Linearly from 25°C All 2.0 mW/°C SCHEMATIC

5 COL

4 EMITTER

PHOTOTRANSISTOR OPTOCOUPLERS Page 2 of 11 © 2003 Fairchild Semiconductor Corporation MCT5200 MCT5201 MCT5210 MCT5211 **All typical T A =25°C

ELECTRICAL CHARACTERISTICS

A = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameters Test Conditions Symbol Device Min Typ Max Units EMITTER Input Forward Voltage (I F = 5 mA) V F All 1.25 1.5 V Forward Voltage Temp. Coefficient (I F = 2 mA) V F T A All -1.75 mV/ Reverse Voltage (I R = 10 µA) V R All 6 V Junction Capacitance (V F = 0 V, f = 1.0 MHz) C J All 18 pF DETECTOR Collector-Emitter Breakdown Voltage (I C = 1.0 mA, I F = 0) BV CEO All 30 100 V Collector-Base Breakdown Voltage (I C = 10 µA, I F = 0) BV CBO All 30 120 V Emitter-Base Breakdown Voltage (I C = 10 µA, I F = 0) BV EBO All 5 10 V Collector-Emitter Dark Current (V CE = 10V, I F = 0, R BE = 1M Ω CER All 1 100 nA Capacitance Collector to Emitter (V CE = 0, f = 1 MHz) C CE All 10 pF Collector to Base (V CB = 0, f = 1 MHz) C CB All 80 pF Emitter to Base (V EB = 0, f = 1 MHz) C EB All 15 pF ISOLATION CHARACTERISTICS Characteristic Test Conditions Symbol Device Min Typ Max Units Input-Output Isolation Voltage (10) (f = 60Hz, t = 1 min.) V ISO All 5300 Vac(rms) Isolation Resistance (10) V I-O = 500 VDC, T A = 25°CR ISO All 10 Ω Isolation Capacitance (9) V I-O = 0, f = 1 MHz C ISO All 0.7 pF Common Mode Transient V CM = 50 V P-P1 , R L = 750 Ω , I F = 0 CM H MCT5210/11

5000 V/µs

Rejection – Output High V CM = 50 V P-P , R L = 1K Ω , I F = 0 MCT5200/01 Common Mode Transient V CM = 50 V P-P1 , R L = 750 Ω , I F =1.6mA CM L MCT5210/11 Rejection – Output Low V CM = 50 V P-P1 , R L = 1K Ω , I F = 5 mA MCT5200/01

© 2003 Fairchild Semiconductor Corporation LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 MCT5211 TRANSFER CHARACTERISTICS A = 0°C to 70°C Unless otherwise specified.) DC Characteristics Test Conditions Symbol Device Min Typ** Max Units Saturated Current Transfer Ratio (1) (Collector to Emitter) I F = 10 mA, V CE = 0.4 V CTR CE(SAT) MCT5200 75 I F = 5 mA, V CE = 0.4 V MCT5201 120 I F = 3.0 mA, V CE = 0.4 V MCT5210 60 I F = 1.6 mA, V CE = 0.4 V MCT5211 100 I F = 1.0 mA, V CE = 0.4 V 75 Current Transfer Ratio (Collector to Emitter) (1) I F = 3.0 mA, V CE = 5.0 V CTR (CE) MCT5210 70 F = 1.6 mA, V CE = 5.0 V MCT5211 150 I F = 1.0 mA, V CE = 5.0 V 110 Current Transfer Ratio Collector to Base(2) I F = 10 mA, V CB = 4.3 V CTR (CB) MCT5200 0.2 I F = 5 mA, V CB = 4.3 V MCT5201 0.28 I F = 3.0 mA, V CE = 4.3 V MCT5210 0.2 IF = 1.6 mA, VCE = 4.3 V MCT5211 0.3 IF = 1.0 mA, VCE = 4.3 V 0.25 Saturation Voltage IF = 10 mA, ICE = 7.5 mA VCE(SAT) MCT5200 0.4 VIF = 5 mA, ICE = 6 mA MCT5201 0.4 IF = 3.0 mA, ICE = 1.8 mA MCT5210 0.4 IF = 1.6 mA, ICE = 1.6 mA MCT5211 0.4 AC Characteristics Test Conditions Symbol Device Min Typ Max Units Propagation Delay High to Low(3) RL = 330 Ω, RBE = ∞ IF = 3.0 mA TPHL MCT5210 10 µs RL = 3.3 kΩ, RBE = 39 kΩ VCC = 5.0 V 7 RL = 750 Ω, RBE = ∞ IF = 1.6mA MCT5211 RL = 4.7 kΩ, RBE = 91 kΩ VCC = 5.0V 15 RL = 1.5 kΩ, RBE = ∞ IF = 1.0mA 17 RL = 10 kΩ, RBE = 160 kΩ VCC = 5.0V 24 VCE = 0.4V, VCC = 5V, RL = fig. 13, RBE = 330 kΩ IF = 10mA MCT5200 1.6 12 IF = 5mA MCT5201 3 30 Propagation Delay Low to High(4) RL = 330 Ω, RBE = ∞ IF = 3.0 mA TPLH MCT5210 0.4 µs RL = 3.3 kΩ, RBE = 39 kΩ VCC = 5.0 V 8 RL = 750 Ω, RBE = ∞ IF = 1.6mA MCT5211 2.5 RL = 4.7 kΩ, RBE = 91 kΩ VCC = 5.0V 11 RL = 1.5 kΩ, RBE = ∞ IF = 1.0mA 7 RL = 10 kΩ, RBE = 160 kΩ VCC = 5.0 V 16 VCE = 0.4V, VCC = 5V, RL = fig. 13, RBE = 330 kΩ IF = 10mA MCT5200 18 20 IF = 5mA MCT5201 12 13 Delay Time(5) VCE = 0.4V, RBE = 330 kΩ, RL = 1 kΩ, VCC = 5V IF = 10mA td MCT5200 0.5 7 µsIF = 5mA MCT5201 1.1 15 Rise Time(6) VCE = 0.4V, RBE = 330 kΩ, RL = 1 kΩ, VCC = 5V IF = 10mA tr MCT5200 1.3 6 µsIF = 5mA MCT5201 2.5 20

PHOTOTRANSISTOR OPTOCOUPLERS Page 4 of 11© 2003 Fairchild Semiconductor Corporation MCT5200 MCT5201 MCT5210 MCT5211 All typicals at TA = 25°C Notes 1. DC Current Transfer Ratio (CTR CE) is defined as the transistor collector current (ICE) divided by the input LED current (IF) x 100%, at a specified voltage between the collector and emitter (VCE). 2. The collector base Current Transfer Ratio (CTR CB) is defined as the transistor collector base photocurrent(ICB) divided by the input LED current (IF) time 100%. 3. Referring to Figure 14 the T PHL propagation delay is measured from the 50% point of the rising edge of the data input pulse to the 1.3V point on the falling edge of the output pulse. 4. Referring to Figure 14 the T PLH propagation delay is measured from the 50% point of the falling edge of data input pulse to the 1.3V point on the rising edge of the output pulse. 5. Delay time (t d) is measured from 50% of rising edge of LED current to 90% of Vo falling edge. 6. Rise time (t r) is measured from 90% to 10% of Vo falling edge. 7. Storage time (t s) is measured from 50% of falling edge of LED current to 10% of Vo rising edge. 8. Fall time (t f) is measured from 10% to 90% of Vo rising edge. 9. C ISO is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pin 4, 5, 6 connected). 10. Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted together. Storage Time(7) VCE = 0.4V, RBE = 330 kΩ, RL = 1 kΩ, VCC = 5V IF = 10mA ts MCT5200 15 18 µsIF = 5mA MCT5201 10 13 Fall Time(8) VCE = 0.4V, RBE = 330 kΩ, RL = 1 kΩ, VCC = 5V IF = 10mA tf MCT5200 16 30 µsIF = 5mA MCT5201 16 30 TRANSFER CHARACTERISTICS (TA = 0°C to 70°C Unless otherwise specified.) (Continued) DC Characteristics Test Conditions Symbol Device Min Typ Max Units

6/10/03Page 5 of 11© 2003 Fairchild Semiconductor Corporation LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 MCT5211 TYPICAL PERFORMANCE GRAPHS Fig. 1 LED Forward Voltage vs. Forward Current Fig. 2 Normalized Current Transfer Ratio vs. Forward Current Fig. 3 Normalized CTR vs. Temperature Fig. 4 Normalized Collector vs. Collector - Emitter Voltage Fig. 5 Normalized Collector Base Photocurrent Ratio vs. Forward Current Fig. 6 Normalized Collector - Base Current vs. Temperature 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.1 1 10 VF - FORWARD VOLTAGE (V) 1.6 10 0.1 0.01 0.001 0.0001 1.2 1.4 1.0 0.8 0.6 0.4 0.2 0.0 100 0.1 0.01 0.1 0.01 0.001 NORMALIZED CTRCE NORMALIZED ICB - COLLECTOR BASE PHOTO CURRENT NORMALIZED - COLLECTOR BASE CURRENT NORMALIZED ICE - COLLECTOR - EMITTER CURRENT 1.2 1.0 0.8 0.6 0.4 0.2 NORMALIZED CTRCE IF - LED FORWARD CURRENT (mA) TA - AMBIENT TEMPERATURE - °C TA - AMBIENT TEMPERATURE - °CIF - FORWARD CURRENT - mA VCE - COLLECTOR - EMITTER VOLTAGE - V IF - FORWARD CURRENT (mA) 100 0.1 -60 -40 -20 0 20 40 60 80 100 -60 -40 -20 0 20 40 60 80 100 0.1 1 10 0.1 1 100 10 11 0 100 TA = -55°C TA = 25°C TA = 100°C Normalized to: IF = 5mA VCE = 5V TA = 25°C Normalized to: IF = 5mA VCE = 5V TA = 25°C IF = 1mA IF = 10mA IF = 2mA IF = 5mA IF = 0.5 mA IF = 0.2 mA Normalized to: I F = 5mA VCE = 5V TA = 25°C IF = 0.2 mA IF = 0.5 mA IF = 1 mA IF = 2 mA IF = 5 mA IF = 10 mA Normalized to: IF = 5mA VCB = 4.3V TA = 25°C Normalized to: IF = 5mA VCB = 4.3V TA = 25°C IF = 0.2 mA IF = 0.5 mA IF = 1 mA IF = 2 mA IF = 5 mA IF = 10 mA

PHOTOTRANSISTOR OPTOCOUPLERS Page 6 of 11© 2003 Fairchild Semiconductor Corporation MCT5200 MCT5201 MCT5210 MCT5211 TYPICAL PERFORMANCE GRAPHS (Continued) Fig. 7 Collector-Emitter Dark Current vs. Ambient Temperature Fig. 8 Switching Time vs. Ambient Temperature Fig. 9 Switching Time vs. Ambient Temperature Fig. 10 Switching Time vs. Ambient Temperature Fig. 11 Switching Time vs. Ambient Temperature Fig. 12 Turn-on Time vs. Base-Emitter Resistance 0 1 02 03 04 05 06 07 08 0 9 0 10000 1000 100 0.1 ICEO - DARK CURRENT (nA) TA - AMBIENT TEMPERATURE (°C) T A - AMBIENT TEMPERATURE (°C) 100 -60 -40 -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (°C) -60 -40 -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (°C) -60 -40 -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (°C) BASE RESISTANCE - R BE (kΩ) -60 -40 -20 0 20 40 60 80 100 IF = 0mA VCE = 10V SWITCHING TIME - t(µs) SWITCHING TIME - t(µs) SWITCHING TIME - t(µs) SWITCHING TIME - t(µs) SWITCHING TIME - tPHL, tPLH (µs) IF = 10mA VCC = 5V RL = 1K RBE = 330K tPLH tPLH tPLH tPLH tPHL tPHL tPHL tPHL ts ts ts ts tf tf tf tf tr tr tr tr td td td td Refer to Figure 13 for switching time circuit Refer to Figure 13 for switching time circuitIF = 10mA VCC = 5V RL = 1K RBE = 100K IF = 5mA VCC = 5V RL = 1K RBE = 330K Refer to Figure 13 for switching time circuit Refer to Figure 13 for switching time circuitIF = 5mA VCC = 5V RL = 1K RBE = 100K 10 100 1000 10000 100 VCC = 5V VCE = 0.4V TA = 25°C tPLH, IF=3mA, RL=3.3K tPLH, IF=1.6mA, RL=4.7K tPLH, IF=1mA, RL=10K tPHL, IF=1mA, RL=10K tPHL, IF=1.6mA, RL=4.7K tPHL, IF=3mA, RL=3.3K

PHOTOTRANSISTOR OPTOCOUPLERS Page 8 of 11© 2003 Fairchild Semiconductor Corporation MCT5200 MCT5201 MCT5210 MCT5211 Package Dimensions (Through Hole) Package Dimensions (Surface Mount) Package Dimensions (0.4” Lead Spacing) Recommended Pad Layout for Surface Mount Leadform 0.100 (2.54) TYP 0.020 (0.51) MIN 0.350 (8.89) 0.330 (8.38) 0.270 (6.86) 0.240 (6.10) PIN 1 ID. 0.022 (0.56) 0.016 (0.41) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.115 (2.92) 0.300 (7.62) TYP0° to 15° 0.154 (3.90) 0.100 (2.54) SE ATING PL ANE 0.016 (0.40) 0.008 (0.20) Lead Coplanarity : 0.004 (0.10) MAX 0.270 (6.86) 0.240 (6.10) 0.350 (8.89) 0.330 (8.38) 0.300 (7.62) TYP 0.405 (10.30) MAX 0.315 (8.00) MIN 0.016 (0.40) MIN PIN 1 ID. 0.016 (0.41) 0.008 (0.20) 0.100 (2.54) TYP 0.022 (0.56) 0.016 (0.41) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.165 (4.18) 0.020 (0.51) MIN SEATING PLANE 0.016 (0.40) 0.008 (0.20) 0.070 (1.78) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.154 (3.90) 0.100 (2.54) 0.200 (5.08) 0.135 (3.43) 0.004 (0.10) MIN 0.270 (6.86) 0.240 (6.10) 0.400 (10.16) TYP 0.016 (0.41) 0.100 (2.54) TYP 0.070 (1.78) 0.060 (1.52) 0.030 (0.76) 0.100 (2.54) 0.295 (7.49) 0.415 (10.54) Note All dimensions are in inches (millimeters)

6/10/03Page 9 of 11© 2003 Fairchild Semiconductor Corporation LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 MCT5211

ORDERING INFORMATION

Option Order Entry Identifier Description S .S Surface Mount Lead Bend SD .SD Surface Mount; Tape and Reel W .W 0.4" Lead Spacing 300 .300 VDE 0884 300W .300W VDE 0884, 0.4" Lead Spacing 3S .3S VDE 0884, Surface Mount 3SD .3SD VDE 0884, Surface Mount, Tape and Reel MCT5200 V XX YY K 43 5 Definitions

1 Fairchild logo

2 Device number

3 VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table) 4 Two digit year code, e.g., ‘03’

5 Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

PHOTOTRANSISTOR OPTOCOUPLERS Page 10 of 11© 2003 Fairchild Semiconductor Corporation MCT5200 MCT5201 MCT5210 MCT5211 NOTE All dimensions are in inches (millimeters) Reflow Profile (Black Package, No Suffix) Carrier Tape Specifications 4.0 ± 0.1 Ø 1.55 ± 0.05 User Direction of Feed 4.0 ± 0.1 1.75 ± 0.10 7.5 ± 0.1 16.0 ± 0.3 12.0 ± 0.1 0.30 ± 0.05 13.2 ± 0.2 4.85 ± 0.20 0.1 MAX 10.30 ± 0.20 9.55 ± 0.20 Ø 1.6 ± 0.1

  • Peak reflow temperature: 225° C (package surface temperature)
  • Time of temperature higher than 183° C for 60–150 seconds
  • One time soldering reflow is recommended 215°C, 10–30 s 225°C peak Time (Minute) 300 250 200 150 100 T emperature (°C) Time above 183° C, 60–150 sec Ramp up = 3 °C/sec

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. Page 11 of 11© 2003 Fairchild Semiconductor Corporation LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 MCT5211