MCT3A65P100F2

MCT3A65P100F2 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

• 65A, -1000V
• V TM = -1.4V (Max) at I = 65A and 150oC
• 2000A Surge Current Capability
• 2000A/µs di/dt Capability
• MOS Insulated Gate Control
• 100A Gate Turn-Off Capability at 150 oC

Description

The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches, and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss. MCTs allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junc- tion temperatures up to 150 oC with active switching. Formerly developmental type TA49226. Symbols Packaging Part Number Information PART NUMBER PACKAGE BRAND MCT3A65P100F2 TO-247 M65P100F2 MCT3D65P100F2 MO-093AA M65P100F2 NOTE: When ordering, use the entire part number. GATE ANODE CATHODECATHODE (TAB) ANODE CATHODE GATE RETURN GATE (ANODE KELVIN) JEDEC MO-093AA JEDEC STYLE TO-247 CATHODE ANODE GATECATHODE (FLANGE) ANODE GATE RETURN CATHODE (BOTTOM SIDE CATHODE ANODE GATE ANODE GATE RETURN METAL) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1999 File Number 4454.2 [ /Title (MCT3 A65P1 00F2, MCT3 D65P1 00F2) /Sub- ject (65A, 1000V , Type MOS- Con- trolled Thyris- tor (MCT) /Autho r () /Key- words /Cre- ator () /DOCI NFO pdf- mark /Page- Mode /Use- Out- lines /DOC- VIEW PART WITHDRAWN PROCESS OBSOLETE - NO NEW DESIGNS

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified MCT3A65P100F2 MCT3D65P100F2 UNITS Continuous Cathode Current Maximum Temperature for Soldering CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Maximum Pulse Width of 200µs (Half Sine). Assume TJ(Initial) = 90oC and TJ(Final) = TJ(Max) = 150oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Peak Off-State Blocking Current I DRM VKA = -1000V VGA = 15V TC = 150oC- - 3 m A TC = 25oC - - 100 µA Peak Reverse Blocking Current I RRM VK = 5V VGA = 15V TC = 150oC- - 4 m A TC = 25oC - - 100 µA On-State Voltage V TM IK = IK110 VGA = -10V TC = 150oC - 1.25 1.4 V TC = 25oC - 1.35 1.5 V Gate to Anode Leakage Current I GAS VGA =±20V - - 200 nA Input Capacitance C ISS VGA = 15V, VKA = -20V, f = 1MHz - 12 - nF Current Turn-On Delay Time t d(ON)I TC = 150oC L = 200µH IK = IK110 = 65A VKA = -400V VGA = 15V/-10V R G = 2.2Ω Test Circuit (Figure 13) - 125 - ns Current Rise Time t rI -7 0 - n s Current Turn-Off Delay Time t d(OFF)I - 770 - ns Current Fall Time t fI - 1000 1400 ns Turn-On Energy E ON - 2.8 - mJ Turn-Off Energy (Note 2) E OFF -1 5 - m J Thermal Resistance Junction To Case R θJC - - 0.43 oC/W NOTE: 2. Turn-Off Energy Loss (EOFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the cathode current equals zero (IK = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. MCT3A65P100F2, MCT3D65P100F2

Handling Precautions for MCTs MOS Controlled Thyristors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exer- cised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. MCTs can be handled safely if the following basic precau- tions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of V GAM . Exceeding the rated VGA can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open- circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to anode. If gate protection is required an external zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 9) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs cathode current (I AK ) plots are possible using the information shown for a typical unit in Figures 3 to 8. The operating frequency plot (Figure 9) of a typical device shows f MAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f MAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Dead- time (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. t d(OFF)I and td(ON)I are defined in Figure 14. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JMAX . td(OFF) is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON ). The allow- able dissipation (PD) is defined by PD =( TJMAX -TC)/RθJC. The sum of device switching and conduction losses must not exceed P D . A 50% duty factor was used (Figure 9) and the conduction losses (PC) are approximated by PC = (VAK x IAK )/2. EON and EOFF are defined in the switching waveforms shown in Figure 14. EON is the integral of the instantaneous power loss (IAK x VAK ) during turn-on and EOFF is the integral of the instantaneous power loss (IAK x VAK ) during turn-off. All tail losses are included in the calculation for EOFF ; i.e. the cath- ode current equals zero (IK = 0). MCT3A65P100F2, MCT3D65P100F2 ECCOSORBD  is a Trademark of Emerson and Cumming, Inc.

5 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE

TERM. 6 CATHODE A b c D E L ØR 123 45 e Q ØS ØP 12345 BACK VIEW TERM. 6 SYMBOL INCHES MILLIMETERS NOTESMIN MAX MIN MAX A 0.180 0.190 4.58 4.82 - b 0.046 0.051 1.17 1.29 2, 3 b1 0.060 0.070 1.53 1.77 1, 2 b2 0.095 0.105 2.42 2.66 1, 2 c 0.020 0.026 0.51 0.66 1, 2, 3 D 0.800 0.820 20.32 20.82 - E 0.605 0.625 15.37 15.87 - e 0.110 TYP 2.79 TYP 4 e1 0.438 BSC 11.12 BSC 4 J1 0.090 0.105 2.29 2.66 5 L 0.620 0.640 15.75 16.25 - L1 0.145 0.155 3.69 3.93 1 ØP 0.138 0.144 3.51 3.65 - Q 0.210 0.220 5.34 5.58 - ØR 0.195 0.205 4.96 5.20 - ØS 0.260 0.270 6.61 6.85 - NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. MCT3A65P100F2, MCT3D65P100F2

MCT3A65P100F2, MCT3D65P100F2 MO-093AA

5 LEAD JEDEC MO-093AA PLASTIC PACKAGE

TERM. 6 CATHODE A A 1 c H 1 D L E b e ØP Q 123 4 5 75o TERM. 6 SYMBOL INCHES MILLIMETERS NOTESMIN MAX MIN MAX A 0.185 0.195 4.70 4.95 - A1 0.058 0.062 1.48 1.57 - b 0.049 0.053 1.25 1.34 3, 4, 5 b1 0.070 0.080 1.78 2.03 3, 4 c 0.018 0.022 0.46 0.55 3, 4, 5 D 0.800 0.820 20.32 20.82 - E 0.615 0.625 15.63 15.87 2 e 0.110 TYP 2.80 TYP 7 e1 0.438 BSC 11.12 BSC 7 H 1 - 0.330 - 8.38 - J1 0.115 0.125 2.93 3.17 8 L 0.575 0.600 14.61 15.24 - L1 - 0.130 - 3.30 3 ØP 0.159 0.163 4.04 4.14 - Q 0.176 0.186 4.48 4.72 2 NOTES: 1. These dimensions are within allowable dimensions of Rev. A of JEDEC MO-093AA outline dated 2-90. 2. Tab outline optional within boundaries of dimensions E and Q. 3. Lead dimension and finish uncontrolled in L 4. Lead dimension (without solder). 5. Add typically 0.002 inches (0.05mm) for solder coating. 6. Maximum radius of 0.050 inches (1.27mm) on all body edges and corners. 7. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 8. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 9. Controlling dimension: Inch. 10. Revision 1 dated 1-93.