MCT271 QT | Alldatasheet

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foul PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS ES MCT271 PACKAGE DIMENSIONS (6) (5) (4) The MCT271 is a phototransistor-type optically coupled 15° MAX isolator. A gallium arsenide infrared emitting diode is 83 66 selectively coupled with an NPN silicon phototransistor. MAX G10 6.10 03 a f me te

8.89 L - © Controlled Current Transfer Ratio—45% to 90%

838 2.33 (specified conditions) : REF = Maximum Turn-on-time—7 yseconds (specified condition) 254 19 = Maximum Turn-off-time—7 useconds (specified Te | TYP condition) >—— = Underwriters Laboratory (U.L.) recognized—File rn esos ma |_1 MIN xy ® Switching networks | a 1.50 1 ae 124 = Power supply regulators a ® Digital logic inputs

0.40 DIMENSIONS IN mm ™ Microprocessor inputs

PACKAGE CODE K ‘ST1603A ™ Appliance sensor systems ANODE|1} {6]BASE catH| 7 a co. [3] {4]EMAIT. c2073 Equivalent Circuit TOTAL PACKAGE INPUT DIODE Lead temperature Peak forward current Power dissipation @ 25°C eee . 200 mW

QT PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS EE eee ELECTRO-OPTICAL CHARACTERISTICS (25°C Temperature Unless Otherwise Specified) INDIVIDUAL COMPONENT CHARACTERISTICS ‘CHARACTERISTIC ‘SYMBOL ___MIN. TYP. WAX. UNITS TEST CONDITIONS INPUT DIODE Forward voltage Ve 1.20 1.50 v ,=20mA Forward voltage temp. cA coefficient aT -1.8 mvc Reverse voltage Va 3.0 25 v 1=10 pA Junction capacitance Cc 50 pF V,=0 V, f=1 MHz 65 pF Ve=1 V, f=1 MHz Reverse leakage current I 0.35 10 uA Ve=3.0 V ‘OUTPUT TRANSISTOR DC forward current gain he 100 420 Voe=5 V, Ic=100 uA Breakdown voltage Collector to emitter BV ceo 30 45 Vv 1.=1.0 mA, -=0 Collector to base BVcx0 70 130 Vv 1.=10 pA, -=0 Emitter to base BV exo 5 7 Vv 1-=100 pA, k=O Leakage current Collector to emitter loco 5 50 nA Vee=10 V, =O Capacitance Collector to emitter 8 pF Vec=0, f=1 MHZ Collector to base 20 pF Vea=5, f=1 MHz Emitter to base 10 pF Ves=0, f=1 MHz DC CHARACTERISTICS ‘SYMBOL MIN. ‘TYP. ‘MAX. UNITS: ‘TEST CONDITIONS Current transfer ratio, collector to emitter (a) CTR 45 67 90 % 1e=10 MA; Vee=10 V Current transfer ratio, collector to base CTRee 0.15 % 1=10 MA; Vea=10V Saturation voltage Veeisan 0.14 40 Vv 1-=16 mA; l-=2mA TRANSFER CHARACTERISTICS SWITCHING TIMES Non-saturated Turn-on time te 49 7 us R.=1000; k=2 mA; Vec=5 Vo Turn-off time te 45 7 us See Figs. 10, 11 Saturated Turn-on time tn 5.2 us =16 mA; R.=1.9 KO Turn-off time: bon 38 us See Figs. 10, 11 (Approximates a typical TTL interface) Turn-on time ton 49 us 1,=16 mA; R.=4.7 KO. Turn-off time tor 90 us See Figs. 10, 11 (Approximates a typical low power TTL interface)

QT! PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS SSS ELECTRO-OPTICAL CHARACTERISTICS (25°C Temperature Unless Otherwise Specified) (Cont'd) ISOLATION CHARACTERISTICS : TYPICAL ELECTRICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Otherwise Specified) a 2 [| ‘] ~~ 125 3 | | Vce = 0.3V F2 | oF | 8 | o7s a gu | A 5 | | 3 | | 2 re 1 g 050) fF —— Es aA 5) Fa | iJ 2 3 2 os 2 a1oz 0812 6 10 20 80100 0 FORWARD CURRENT — Ir (mA) 0 5 10 15 20 C1686 Ip — (mA) C1679 Current Forward Current =z | Ema | | yoez ogy “SLL ab | ee2oma\\\\ | wh LT TTT cere) SE er | | wELE TTT er Eos \\ acco 3 7 ; 14 eee Ane asenee jaanay 2SEREe gf CoAT § OA o4 Aor 4Geeeeeee -75 -50 -25 0 +25 +50 +75 +100 +125 012346 67890 1 Ta— (°C) C1680 te = (mA) C1243 Temperature Forward Current

QT PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS TYPICAL ELECTRICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Otherwise Specified) (Cont'd) ee 1.00 ees Fowl A NL rr Tool Ae #8 oop | | Dae TL TTT FS ooo / | Neu [vee = 5M ELF oro | MAN | ver 54 I| bf 070 AN TT oma tH 2B eof ANTM, aoa LITT} <5 ooo | P= soma TTT TT E oso | fy five tr = soma | TI = oso LA y_ LL

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8 cool f WET 1 TT S oof FT TT) 2 oz0 Hof 2 oof ELIT TM § oof fi TTT § owt ft oF LTTMIT TTT 0 LAI TT Ti ]OK 100K /M. 10K 100K 1M " Ree — BASE RESISTANCE — ‘a. Ree — BASE RESISTANCE — (12) C1681 C1682 AT a (an OT u fl im Tl al H erat SL NU Fea ZU UIT all) \\ Bo FU AI mall N os + a \\ 2 } Veo ="10v | Zz 0 i t OE AMS : my

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See Fig 10) oon 100K 1M o oS OK 100K 1M o Ree — BASE RESISTANCE — () Ree — BASE RESISTANCE — (2) C1683 C1684 vs. 12, Voc = 10V w Vee = 10v ii | ouTPUT “ 1 I o-2 | Boa oe . 1 gs f ourrut a F 2 oe - fee ' 1 g i ‘on S| Zz a) i ¥ i Lot 1 oss = eit feed on temima creas cresea crest Test Circuit