MCT2200 QT | Alldatasheet

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QT) PHOTOTRANSISTOR OPTOCOUPLERS Lee nn al MCT2200 MCT2201 MCT2202 LL PACKAGE DIMENSIONS DESCRIPTION Dp x The MCT2200, MCT2201 and MCT2202 are opto- tb) Ch) (4) |r on eal isolators with phototransistor output. A gallium arsenide 83 6s 15° MAX infrared emitting diode is selectively coupled with an NPN ax £86 silicon phototransistor. MAX 6.10 03 er

838 REF = Minimum current transfer ratio of 100%

= Maximum turn-on, turn-off time — 10 us 254 = = Underwriters Laboratory (UL) recognized File #€90700 a Gro ry) ae ak APPLICATIONS in it = Power supply regulators JL. ‘50 : ® Digital logic inputs as 3 = Appliance sensor systems m0 DIMENSIONS IN men = Industrial controls PACKAGE CODE K ‘ST1603A ANoDE(t} {6)BASE CATH. a a co. 3) {4}emtr. 2079 Equivalent Circuit ABSOLUTE MAXIMUM RATINGS TOTAL PACKAGE INPUT DIODE Storage temperature . see —55°C to 150°C = Forward current... ceceeeeeeeeess 6OMA Operating temperature vessse —55°C to 100°C Reverse voltage . . bees .3.0V Derate linearly from 25° sossses. 3.5MW/P°C — QUTPUT TRANSISTOR Power dissipation at 25°C ambient . 200 mw 1-141

QT PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS ES ELECTRO-OPTICAL CHARACTERISTICS (25°C Unless Otherwise Specified) INDIVIDUAL COMPONENT CHARACTERISTICS Forward voltage Ve 1.3 1.50 v 1-=20mA coefficient a 1.8 mvc ‘Junction capacitance [on 50 pF V.=0V, f=1 MHz Breakdown voltage Collector to emitter BV cco 30 45 Vv [.=1.0 mA, |-=0 Collector to emitter heeo 5 50 nA Vee=10V, =O Collector to emitter 8 pF Voe=0, f=1 MHz ‘TRANSFER CHARACTERISTICS collector to emitter MCT2200 20 60 % TRANSFER CHARACTERISTICS SWITCHING TIMES Non-saturated R.=100 2; I=2 mA; Turn-on time be 6.0 10 us Voc=10V ISOLATION CHARACTERISTICS

foul PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS LS ELECTRICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Otherwise Specified) a “TT aA 128 gs 7 di o Rie 1.0 tc ' 07s /\\ 2 14 A = | z 2 10 | L 2 050 Fy a: y £ oof pe beh, 2 os den : 2 os g 0102 0512 8 10 20 60 100 0 FORWARD CURRENT — Ir (mA) 0 5 , 10 n 5 cies C1686 iF — (MA) Current Forward Current 12 = Ay | lez toma Vee = 03¥ (TT TTT TTT yy Fk 1.0 T 1 LS SHE E oo Le \\ es 8 7 ’ HLA ca div Fs f HEA § LOA os ia? 46S -75 -50 -25 0 +25 +50 +75 +100+125 012345 67 8 $10 11 Ta — (°C) C1680 Ip ~ (mA) 01243 Temperature Forward Current 0) 1.00; — err = owl A ee 3 gE nuit = 0.90] ao Fs Ent § a ane Ai ofA (we el eZ abril Fe ed YAU OB eof OPEN loctan LI! °6 on AS ir=ioma | [1] yo ATHY O00) TH ie = 5ma = oso aaa te = roma || = soll An LI 8 0 rae || rani Ss ot Sean SP F F 0.20) 5 om PH zn HE pore | a | 2 LLL TT 00K iM 10K 100K 1M Kec — BASE RESISTANCE - a Ree — BASE RESISTANCE — (1) C1681 C1682 1-143,

fou PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS mmm ELECTRICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Otherwise Specified) (Cont'd) 12 12 LU ue Te wu a: TLL | i) 513 10 Ai | TNs A LU N a WV ¥ So Th : | |i \\ / 5 { 5 09 7 3 3 g go TIMI IT E h Z if Vee = 10V g 1° il T Ps A Io=2ma Fe Vee = 10V S O7 7 ‘Ru = 1009 2 Ic = 2mA Seay dmc oe os os See Fig. 10) 10K 100K 1M o 10K 100K 1M o Ree — BASE RESISTANCE — () Ree — BASE RESISTANCE — (1) C1683 C1684 12, Vee = 10V -

2 Ry = 1000 Vee © tov

= (See Fig. 10) @ \\<10 — Fs & Re = | EL output & | o8-—\\o a mT Fa 0 5 10 15 20 = lc — (ma) 1685 c12968 PULSE WIDTH = 100 us DUTY CYCLE = 10% INPUT ov i] ! i] ! i] ' OUTPUT I | ' 90% | iA 10% | !ort | 1 ota 1 I ton PY tor C1294 Fig. 11. Switching Time Waveforms