MCT210M | DigiCamel IC Datasheet

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MCT2M_09 FAIRCHILD | Alldatasheet

Document overview

Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 12

Technical content

Features

UL recognized (File # E90700, Vol. 2) IEC60747-5-2 recognized (File # 102497) – Add option V (e.g., MCT2VM)

Applications

Description

The MCT2XXM series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. Schematic Package Outlines Cathode 2 Anode 1 No Connection 3

5 Collector

6 Base

4 Emitter

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 2 MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Units TOTAL DEVICE T STG Storage Temperature -40 to +150 °C T OPR Operating Temperature -40 to +100 °C T SOL Lead Solder Temperature 260 for 10 sec °C P D Total Device Power Dissipation @ T A = 25°C 250 mW Derate above 25°C 2.94 mW/°C EMITTER I F DC/Average Forward Input Current 60 mA V R Reverse Input Voltage 3 V I F (pk) Forward Current – Peak (300µs, 2% Duty Cycle) 3 A P D LED Power Dissipation @ T A = 25°C 120 mW Derate above 25°C 1.41 mW/°C DETECTOR I C Collector Current 50 mA V CEO Collector-Emitter Voltage 30 V P D Detector Power Dissipation @ T A = 25°C 150 mW Derate above 25°C 1.76 mW/°C

Electrical Characteristics

A = 25°C unless otherwise speciﬁed) Individual Component Characteristics *All typical T A = 25°C Isolation Characteristics *All typicals at T A = 25°C Symbol Parameter Test Conditions Device Min. Typ.* Max. Units EMITTER V F Input Forward Voltage I F = 20mA MCT2M MCT2EM MCT271M 1.25 1.50 V T A = 0°C–70°C, I F = 40mA MCT210M 1.33 I R Reverse Leakage Current V R = 3.0V MCT2M MCT2EM MCT271M 0.001 10 µA T A = 0°C–70°C, V R = 6.0V MCT210M DETECTOR BV CEO Collector-Emitter Breakdown Voltage I C = 1.0mA, I F = 0 ALL 30 100 V T A = 0°C–70°C MCT210M BV CBO Collector-Base Breakdown Voltage I C = 10µA, I F = 0 MCT2M MCT2EM MCT271M 70 120 V T A = 0°C–70°C MCT210M 30 BV ECO Emitter-Collector Breakdown Voltage I E = 100µA, I F = 0 MCT2M MCT2EM MCT271M 71 0 V T A = 0°C–70°C MCT210M 6 10 I CEO Collector-Emitter Dark Current V CE = 10V, I F = 0 ALL 1 50 nA V CE = 5V, T A = 0°C–70°C 30 µA I CBO Collector-Base Dark Current V CB = 10V, I F = 0 ALL 20 nA C CE Capacitance V CE = 0V, f = 1MHz ALL 8 pF Symbol Parameter Test Conditions Min Typ* Max Units V ISO Input-Output Isolation Voltage f = 60Hz, t = 1 sec. 7500 Vac(pk) R ISO Isolation Resistance V I-O = 500 VDC 10 Ω C ISO Isolation Capacitance 0.2 2 pF

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 4 MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers (Continued) A = 25°C unless otherwise speciﬁed) Transfer Characteristics *All typicals at T A = 25°C Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit DC CHARACTERISTICS CTR Output Collector Current T A = 0°C–70°C MCT210M 150 % I F = 10mA, V CE = 10V MCT2M MCT2EM MCT271M 45 90 I F = 3.2mA to 32mA, V CE = 0.4V, T A = 0°C–70°C MCT210M 50 V CE(SAT) Collector-Emitter Saturation Voltage I C = 2mA, I F = 16mA MCT2M MCT2EM MCT271M 0.4 V I C = 16mA, I F = 32mA, T A = 0°C–70°C MCT210M AC CHARACTERISTICS t on AC Characteristic Saturated Turn-on Time from 5V to 0.8V I F = 15mA, V CC = 5V, R L = 2k Ω , R B = Open (Fig. 11) MCT2M MCT2EM 1.1 µs I F = 20mA, V CC = 5 V, R L = 2k Ω , R B = 100k Ω ) (Fig. 11) MCT2M MCT2EM 1.3 t off Saturated Turn-off Time from SAT to 2.0 V I F = 15mA, V CC = 5V, R L = 2k Ω , R B = Open (Fig. 11) MCT2M MCT2EM 50 µs I F = 20mA, V CC = 5V, R L = 2k Ω , R B = 100k Ω (Fig. 11) MCT2M MCT2EM t on Turn-on Time I F = 10mA, V CC = 10V, R L = 100 Ω MCT2M MCT2EM 2µ s t off Turn-off Time I F = 10mA, V CC = 10V, R L = 100 Ω MCT2M MCT2EM 2µ s t r Rise Time I F = 10mA, V CC = 10V, RL = 100Ω MCT2M MCT2EM 2µ s tf Fall Time I F = 10mA, VCC = 10V, RL = 100Ω MCT2M MCT2EM 1.5 µs ton Saturated turn-on time I F = 16mA, RL = 1.9kΩ, VCC = 5V (Fig. 11) MCT271M 1.0 µs toff Saturated turn-off time (Approximates a typical TTL interface) 48 µs t on Saturated turn-on time I F = 16mA, RL = 4.7kΩ, VCC = 5 V (Fig. 20) MCT271M 1.0 µs toff Saturated turn-off time (Approximates a typical low power TTL interface) 98 µs t r Saturated rise time I F = 16mA, RL = 560Ω, VCC = 5V) (Fig. 11, 12) MCT210M 1.0 µs tf Saturated fall time 11 µs TPD (HL) Saturated propagation delay – HIGH to LOW IF = 16mA, RL = 2.7kΩ (Fig. 11, 12) MCT210M 1.0 µs TPD (LH) Saturated propagation delay – LOW to HIGH 50 µs tr Non-saturated rise time I C = 2mA, VCC = 5V, RL = 100Ω (Fig. 11) MCT210M 2 µs tf Non-saturated fall time 2 µs ton Non-saturated turn-on time I C = 2mA, VCC = 5V, RL = 100Ω (Fig. 20) MCT271M 2 7 µs toff Non-saturated turn-off time 2 7 µs

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 5 MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers Safety and Insulation Ratings As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classiﬁcations per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classiﬁcation 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 VPR Input to Output Test Voltage, Method b, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC

1594 V peak

Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC

1275 V peak

VIORM Max. Working Insulation Voltage 850 V peak VIOTM Highest Allowable Over Voltage 6000 V peak External Creepage 7 mm External Clearance 7 mm Insulation Thickness 0.5 mm RIO Insulation Resistance at Ts, V IO = 500V 10 9 Ω

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 6 MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers Typical Performance Curves Fig. 2 Normalized CTR vs. Forward Current IF – FORWARD CURRENT (mA) 02468 1 0 1 2 1 41 61 82 0 NORMALIZED C TR 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VCE = 5.0V TA = 25°C Normalized to IF = 10mA Fig. 3 Normalized CTR vs. Ambient Temperature TA – AMBIENT TEMPERATURE (°C) -60 -40 -20 0 20 40 60 80 100 NORMALIZED CTR 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IF = 5mA IF = 10mA IF = 20mA Normalized to IF = 10mA TA = 25°C IF – LED FORWARD CURRENT (mA) VF – FORWARD VOLTAGE (V) Fig. 1 LED Forward Voltage vs. Forward Current 11 0 100 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 TA = 25°C TA = 55°C TA = 100°C Fig. 5 CTR vs. RBE (Saturated) RBE – BASE RESISTANCE (kΩ) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IF = 20mA IF = 10mA IF = 5mA VCE= 0.3V Fig. 4 CTR vs. RBE (Unsaturated) RBE – BASE RESISTANCE (kΩ) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VCE = 5.0V IF = 20mA IF = 10mA IF = 5mA 0.01 0.1 1 10 0.001 0.01 0.1 100 IF = 5mA IF = 20mA IF = 10mA Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current IC – COLLECTOR CURRENT (mA) VCE (SAT) – COLLECTOR-EMITTER SATURATION VOLTAGE (V) IF = 2.5mA TA = 25°C

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 7 MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers Typical Performance Curves (Continued) NORMALIZED t on – (t on(R BE ) / t on(open) Fig. 8 Normalized ton vs. RBE RBE – BASE RESISTANCE (kΩ) 10 100 1000 10000 100000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCC = 10V IC = 2mA RL = 100Ω SWITCHING SPEED ( µs) Fig. 7 Switching Speed vs. Load Resistor R – LOAD RESISTOR (kΩ) 0.1 1 10 100 0.1 100 1000 Toff IF = 10mA VCC = 10V TA = 25°C Tr Ton Tf 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 VCC = 10V IC = 2mA RL = 100Ω NORMALIZED t off – (t off(R BE ) / t off(open) 10 100 1000 10000 100000 RBE – BASE RESISTANCE (kΩ) Fig. 9 Normalized toff vs. RBE Fig. 10 Dark Current vs. Ambient Temperature TA – AMBIENT TEMPERATURE (˚C) 02 0 4 06 08 0 1 0 0 ICEO - COLLECTOR -EMITTER DARK CURRENT (nA) 0.001 0.01 0.1 100 1000 10000 VCE = 10 V TA = 25˚C

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 9 MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers Package Dimensions 8.13–8.89 6.10–6.60 Pin 1 3.28–3.53 2.54 (Bsc)(0.86) 0.41–0.51 1.02–1.78 0.76–1.14 8.13–8.89 6.10–6.60 Pin 1 3.28–3.53 2.54 (Bsc)(0.86) 0.41–0.51 1.02–1.78 0.76–1.14 7.62 (Typ.) 15° (Typ.) 0.20–0.30 0.20–0.30 10.16–10.80 Through Hole 0.4" Lead Spacing Surface Mount Rcommended Pad Layout (1.78) (2.54) (1.52) (7.49) (10.54) (0.76) 8.13–8.89 Note: All dimensions in mm. 6.10–6.60 8.43–9.90 Pin 1 0.25–0.36 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.76–1.14 0.38 (Min.) 3.28–3.53 5.08 (Max.) 0.20–0.30 0.16–0.88 (8.13)

Ordering Information

Order Entry Identiﬁer (Example) Description No sufﬁx MCT2M Standard Through Hole Device (50 units per tube) S MCT2SM Surface Mount Lead Bend SR2 MCT2SR2M Surface Mount; Tape and Reel (1,000 units per reel) T MCT2TM 0.4" Lead Spacing V MCT2VM IEC60747-5-2 TV MCT2TVM IEC60747-5-2, 0.4" Lead Spacing SV MCT2SVM IEC60747-5-2, Surface Mount SR2V MCT2SR2VM IEC60747-5-2, Surface Mount, Tape and Reel (1,000 units per reel) *Note – Parts that do not have the ‘V’ option (see deﬁnition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. Deﬁnitions 1F airchild logo 2D evice number

3 VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table) 4 One digit year code, e.g., ‘7’ 5T wo digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 11 MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers Carrier Tape Specification Reflow Profile 4.0 ± 0.1 Ø 1.5 MIN User Direction of Feed 2.0 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 24.0 ± 0.3 12.0 ± 0.1 0.30 ± 0.05 21.0 ± 0.1 4.5 ± 0.20 0.1 MAX 10.1 ± 0.20 9.1 ± 0.20 Ø 1.5 ± 0.1/-0 300 280 260 240 220 200 180 160 140 120 100 Time (s) 0 60 180120 270 260°C >245°C = 42 Sec Time above 183°C = 90 Sec 360 1.822°C/Sec Ramp up rate

33 Sec

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 12 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries,a n dis not intended to be an exhaustive list of all such trademarks. Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™* Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter® * FPS™ F-PFS™ FRFET® Global Power Resource SM Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™ -3 SuperSOT™ -6 SuperSOT™ -8 SupreMOS™ SyncFET™ Sync-Lock™ ® * TheP ower Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™ * µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ *T rademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, faileda pplications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technicala n dproduct information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 First Production MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers

Product Information

MCT210M specifications and overview.

Summary

Phototransistor Optocouplers

Description

Phototransistor Optocouplers

Source title MCT210M Datasheet(PDF) - Fairchild Semiconductor

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