MCT210

MCT210 QT | Alldatasheet

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fou PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS SS MCT210 5 oo on NX The MCT210 incorporates a NPN silicon planar th) th) phototransistor optically coupled to a gallium arsenide t 15° MAX infrared emitting diode. The MCT210 has a specified 83 696 minimum CTR of 50%, saturated, and 150%, unsaturated. MAX § 15, ‘L a= FEATURES | ; 02 Ame) ! a

8.89 LL - = TTL compatible 1-10 gate loads

8.38 2.33 ® High CTR with transistor output MCT210—150% min. REF ™ Specified CTR over temperature range = Good logic load characteristics 254 19 Vo.=0.4 V@ 1.6 mA to 16mA Tye |. "| TvP output sinking (la) a ® UL recognized (File #E90700) bt ty 4m 53 a 2.54 y _,MIN i # Digital logic isolation | 150 = Line receivers ass 124 = Feedback control circuits

0 DIMENSIONS IN ™ Monitoring circuits

ANoDE{I] {6]BASE CATH. a ho (3) {4}EMIT. 2073 Equivalent Circuit ABSOLUTE MAXIMUM RATINGS TOTAL PACKAGE INPUT DIODE Lead temperature Peak forward current Derate linearly from 25°C. cose. 2.67 mWPC

QT PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS Leen el ELECTRO-OPTICAL CHARACTERISTICS (0° to +70°C Temperature Unless Otherwise Specified) INDIVIDUAL COMPONENT CHARACTERISTICS ‘CHARACTERISTIC ‘SYMBOL MIN. TYP. MAX. UNITS TEST CONDITIONS INPUT DIODE Forward voltage ve 1.25 1.50 v b=40 mA Forward voltage temp. AV -1.8 mvc coefficient aT Reverse breakdown voltage BV, 60 15 Vv h=10 ZA Junction capacitance G 50 pF Vs=0V, f=1 MHz 65 pF V=1V,f=1 MHz Reverse leakage current te Ot 40 vA __Vi=6.0V OUTPUT TRANSISTOR DC forward current gain Dee 400 Vec=5 V, [= 10 mA Breakdown voltage Collector to emitter BVico 30 45 v L=1.0 MA, b=0 Collector to base BVes0 30 Vv 1e=10 pA, L=0 Emitter to collector BVeco 6 8 v 1=100 pA, =O Leakage current Collector to emitter lexo 5 50 nA Vee=5V, l-=0, Tr= 425°C

30 BA Va=5V,1=0

Collector to emitter 8 pF Vee=0, f= 1 MHz Collector to base 20 PF Vea=5, f=1 MHz Emitter to base 10 pF Vee=0, f= 1 MHz ‘DG CHARACTERISTIC ‘SYMBOL __MIN. TYP. __MAX. UNITS TEST CONDITIONS. Current transfer ratio, leah collector to emitter MCT210 (a) 50 70 % Voc=0.4V, k=3.2 mA t032mA 150 225 % Vee=5.0V, = 10 mA Current transfer ratio, lealle 06 % Ves=5.0 V, =10 mA collector to base Saturation voltage Voom collector to emitter 02 04 v 1=16 mA, |}=32 mA

QT. PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS Nee ELECTRO-OPTICAL CHARACTERISTICS (Q° to +70°C Temperature Unless Otherwise Specified) (Cont'd) TRANSFER CHARACTERISTICS (Cont'd) SWITCHING TIMES Non-saturated Rise time t 4 us R.=100 2, =2 mA, Vecn5V Fall time t 5 us See Figs. 15 and 16 Saturated Rise time t 25 BS R.=560 2, |=16 mA Fall time t 25 BS See Figs. 15 and 16 Propagation delay High to low Trop 2 us R.=2.7K, =16 MA Low to high Trows 10 us See Figs. 15 and 16 ISOLATION CHARACTERISTICS Steady state isolation Ve 7500 VAC-PEAK host yA, 1 minute

5300 VAG-AMS lot yA, 1 minute

isolation resistance Ra To" 8x10" ‘ohms Vio=500VDG, 24256 Isolation capacitance Cn 10 pF___f=1MHz TYPICAL ELECTRICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Otherwise Specified) av 7 °° Bas (| oo Daal 3 : cae Av Lol Fas —T oY Zanes) i LJ _ SSH Ba 7 SE H

5 Sot TT TT]

3° i en n/t 2 [e (ESS os 1S), ‘FRA al g" 7 A et peel troy os? sw a tom OAR i] FORWARD CURRENT ~ Ip ima oat ow 2 tet ge to808 rose Ver Wont eee Forward Current Collector to Emitter Voltage

foul PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS ee ——— TYPICAL ELECTRICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Otherwise Specified) (Cont'd) » » [TTT TT TTT yy | 8 HH wl LL op TT TT Pes 6 He Lt | COCO | NA ae | ‘ | Ta a ed al feet 24 7 a i itt ye lt ee eeny/4eeee 2 He | LTT Try TT Hartt] ‘ / | A \\oaay eens ‘ ee | COA oc (oP 4eeeeeeee 2 Forward Current Collector to Emitter Voltage « wo — Spy oT of HT N sneer eee zs \\ [eatin a) ie 3 , Seo a) 5 pee eee Fa Ih aa /Mcmaclimsl . Sl ASS Meee (saat caine atioeel iil oro tie titty] “ er Voltage vs. Base to Emitter Resistance Base to Emitter Resistance EN TRE] See OCR i” pt TN ; To ; ttt SS 5 “LETTS Fig. 7. Current Transfer Ratio Fig. 8. Current Transfer Ratio (saturated) vs. Temperature (unsaturated) vs. Temperature

QT PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS er TYPICAL ELECTRICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Otherwise Specified) (Cont'd) as eee "poe Ee rel oot Re Le DoHHR HH a amen - Lge Fe Tt eau " peAl ett . Pao Fig. 9. Collector to Emitter Fig. 10 Collector to Emitter Leakage Saturation Voltage vs. Temperature Current vs. Temperature 3 > cr Gaeta ene tA ——— Let | | = Current vs. Temperature |, Drive (saturated) AAT TT 7 His nr wet see TTL Mi et ee 2 TIT a i DUI eH 3 THE i FSI Ae aalipcaipee eat Fey i cae ERR EEE ie Resistance (non-saturated) Resistance (non-saturated)

fou PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS Henne el TYPICAL ELECTRICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Uniess Otherwise Specified) (Cont'd) curt yi TEP * mR atunateos i i ~ i : me Fig. 18 Switching Time Waveforms Fig. 16 Switching Time Test Circuits tye Fig. 17. Typical TTLintertace at Operating Temperatures of 0°to 70°C