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MCT2, MCT2E OPTOCOUPLERS SOES023 – MARCH 1983 – REVISED OCTOBER 1995 1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS /C0068 Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon npn Phototransistor /C0068 High Direct-Current Transfer Ratio /C0068 Base Lead Provided for Conventional Transistor Biasing /C0068 High-Voltage Electrical Isolation . . . 1.5-kV, or 3.55-kV Rating /C0068 Plastic Dual-In-Line Package /C0068 High-Speed Switching: tr = 5 µs, tf = 5 µs Typical /C0068 Designed to be Interchangeable with General Instruments MCT2 and MCT2E absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)† Continuous power dissipation at (or below) 25°C free-air temperature: † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. This value applies when the base-emitter diode is open-circulated. 2. Derate linearly to 100 °C free-air temperature at the rate of 2.67 mW/°C. 3. Derate linearly to 100 °C free-air temperature at the rate of 3.33 mW/°C. Copyright  1995, Texas Instruments IncorporatedPRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. ANODE CATHODE NC BASE COLLECTOR EMITTER MCT2 OR MCT2E ...PACKAGE (TOP VIEW) NC – No internal connection

MCT2, MCT2E OPTOCOUPLERS SOES023 – MARCH 1983 – REVISED OCTOBER 1995

2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

electrical characteristics at 25°C free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CBO Collector-base breakdown voltage IC = 10 µA, IE = 0, IF = 0 70 V V(BR)CEO Collector-emitter breakdown voltage IC =1 mA, IB = 0, IF = 0 30 V V(BRECO) Emitter-collector breakdown voltage IE = 100 µA, IB = 0, IF = 0 7 V IR Input diode static reverse current VR = 3 V 10 µA IC(on) On-state collector current Phototransistor operation VCE = 10 V, IB = 0, IF = 10 mA 2 5 mA C(on) Photodiode operationVCB = 10 V, IE = 0, IF = 10 mA 20 µA IC(off) Off-state collector current Phototransistor operation VCE = 10 V, IB = 0, IF = 0 1 50 nA C(off) Photodiode operationVCB = 10 V, IE = 0, IF = 0 0.1 20 nA H FE Transistor static forward current transfer ratio VCE = 5 V, IC 100 µA MCT2 250 H FE Transistor static forward current transfer ratio IC = 100 µA, IF = 0 MCT2E 100 300 VF Input diode static forward voltage IF = 20 mA 1.25 1.5 V VCE(sat) Collector-emitter saturation voltage IC = 2 mA, IB = 0, IF = 16 mA 0.25 4 V rIO Input-to-output internal resistance Vin-out = ±1.5 kV for MCT2, ±3.55 kV for MCT2E, See Note 4 1011 Ω C io Input-to-output capacitance Vin-out = 0, See Note 4 f = 1 MHz, 1 pF NOTE 4: These parameters are measured between both input diode leads shorted together and all the phototransistor leads shorted together. switching characteristics PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tr Rise time Phototransistor operation VCC = 10 V,IC(on) = 2 mA, 5 µs tf Fall time Phototransistor operation CC , R L = 100 Ω , C(on) , See Test Circuit A of Figure 1 5 µs tr Rise time Photodiode operation VCC = 10 V,IC (on) 20 µA, 1 µs tf Fall time Photodiode operation CC R L = 1 kΩ , C(on) µ See Test Circuit B of Figure 1 1 µs

B. The output waveform is monitored on an oscilloscope with the following characteristics: tr ≤ 12 ns, Rin ≥ 1 MΩ, C in ≤ 20 pF. Figure 1. Switching Times

MCT2, MCT2E OPTOCOUPLERS SOES023 – MARCH 1983 – REVISED OCTOBER 1995

4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

0.04 0.01 0.1 0.1 0.4 1 4 10 40 100 – Collector Current – mA COLLECTOR CURRENT vs INPUT-DIODE FORWARD CURRENT 0.4 100 IC IF – Input-Diode Forward Current – mA VCE = 10 V IB = 0 TA = 25°C Figure 2 Figure 3 0 2 4 6 8 10 12 COLLECTOR CURRENT vs COLLECTOR-EMITTER VOLTAGE 14 16 18 20 – Collector Current – mAIC VCE – Collector-Emitter Voltage – V Max Continuous Power Dissipation IF = 40 mA IF = 30 mA IF = 20 mA IF = 20 mA IB = 0 TA = 25°C See Note A NOTE A: Pulse operation of input diode is required for operation beyond limits shown by dotted lines. 0.8 0.4 0.2 1.2 1.4 1.6 0.6 –75 –50 –25 0 25 50 75 100 125 TA – Free-Air Temperature – °C VCE = 0.4 V to 10 V IB = 0 IF = 10 mA See Note B NOTE B: These parameters were measured using pulse techniques, tw = 1 ms, duty cycle ≤ 2 %. ON-STATE COLLECTOR CURRENT (RELATIVE TO VALUE AT 25°C) vs FREE-AIR TEMPERATURE (Relative to Value at On-State Collector Current A °= 25 C)T Figure 4

operated in high-humidity conditions. Unit weight is approximately 0.52 grams.

6 Places

B. Pin 1 identified by index dot.

  1. Anode (part of the infrared-emitting diode)
  2. Cathode (part of the infrared-emitting diode)
  3. Emitter (part of the phototransistor)
  4. Collector (part of the phototransistor)
  5. Base (part of the phototransistor)

D. The dimensions given fall within JEDEC MO-001 AM dimensions. E. All linear dimensions are given in millimeters and parenthetically given in inches. Figure 5. Mechanical Information

Orderable Device Status(1) Package Type Package Drawing Pins Package Qty Eco Plan(2) Lead/Ball FinishMSL Peak Temp (3) MCT2 OBSOLETE PDIP N 6 TBD Call TI Call TI MCT2E OBSOLETE PDIP N 6 TBD Call TI Call TI (1)The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontentfor the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS):TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br):TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. PACKAGE OPTION ADDENDUM www.ti.com 8-Apr-2005 Addendum-Page 1

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