MCT2 QT | Alldatasheet
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QT! PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS SY MCT2 —_.1 OE PACKAGE DIMENSIONS oo 2 — The MCT2 is a NPN silicon planar phototransistor fh) Ch) (4) => optically coupled to a gallium arsenide infrared emitting 15° MAX diode. 83 6.96 kK ame | 7S wa Fa] 1k Tr © AC line/digital logic isolator REF ® Digital logic/digital logic isolator = Telephone/telegraph line receiver 254 19 = Twisted pair line receiver wel] {"1e = High frequency power supply feedback control ws City 4a 53 ™ Relay contact monitor Weta 4 MAX ®™ Power supply monitor et = UL recognized—File £90700 MIN # =| 150 056 124
40 DIMENSIONS IN mm
PACKAGE CODE K ‘ST1603A ANODE(I} 16)BASE oi | a co. [3] {4]EMAIT. 2079 Equivalent Circuit ABSOLUTE MAXIMUM RATINGS TOTAL PACKAGE OUTPUT TRANSISTOR INPUT DIODE ( ; n Peak forward current (1 us pulse, 300 pps) 6... eee BOA Power dissipation 25°C ambient -<. 200 mW Derate linearly from 25°C ... 2.6 mw/°C
fou PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS SS ELECTRO-OPTICAL CHARACTERISTICS (25°C Free Air Temperature Unless Otherwise Specified) INDIVIDUAL COMPONENT CHARACTERISTICS INPUT DIODE Forward voltage ve 125150 V__=20mA Reverse voltage Va 30 25 Vi h=10 nA Junction capacitance c 50 PF V=0V, F=1 MHz Reverse leakage current h O10 pA __Va=3.0V DC forward current gain Dee 250 Vee=5 V, 1e=100 wA Collector to emitter breakdown volt BVcco 3085 V___k=1,0mA, 1-=0 Collector to base breakdown voltage BVcso 70 165 Vi c=10 uA, -=0 Emitter to collector breakdown voltage BVeco 7 14 V__k=100 nA, .=0 Collector to emitter, leakage current leo 5 50 MA_—“Vee=10V, =O Collector to base leakage current lees 01 20 MA Vag=10V,b=0 Capacitance collector to Cozo emitter 8 PF Vec=0 Capacitance collector to Coro base 20 PF Ves=10V Capacitance emitter to base Cosa 40 PF Vu=0 TRANSFER CHARACTERISTICS (CHARACTERISTICS ‘SYMBOL MIN. ‘TYP. MAX. UNITS ‘TEST CONDITIONS. COUPLED OC collector current transfer CTR 20 60 % — Vee=10V, = 10 MA, Note 1 ratio DC base current transfer ratio CTRes 35 9% Ves=10V, = 10 mA Collector-emitter, saturation voltage Vex(sat) 0.24 04 V___k=2.0mA, -=16 mA ‘AC CHARACTERISTICS ‘SYMBOL MIN. TYP. MAX. UNITS "TEST CONDITIONS Bandwidth (see note 2) By 150 KH, l=2 mA, Ve=10V, R.=1000 ‘SWITCHING TIMES Saturated ton (from 5 V to 0.8 V) t.. (SAT) 10 wS R=2KO,b=15 MA, Voo=5V toff (from SAT to 2.0 V) (SAT) 30 HS _Re=open (Fig. 10 and Fig. 11) Saturated ton (from 5 V to 0.8 V) t,. (SAT) i) HS R=2KM,L=20MA, Voo=5V toff (from SAT to 2.0 V) ty (SAT) 27 uS —_ Re=100 KN (Fig. 10 and Fig. 11) Non-saturated Base Rise Time t 300 MS R=1KM, Veo=10V Fall Time a 300 ns
QT PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS ELECTRO-OPTICAL CHARACTERISTICS 25°C Free Air Temperature Unless Otherwise Specified) (Cont'd) ISOLATION CHARACTERISTICS TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Otherwise Specified) eT] LF aes gis i i 2 10 2 050 @ aa 5 0102 05 1 2 5 10 20 50100 O FORWARD CURRENT — Ir (mA) 0 5 10 15 20 Current Forward Current = Peed | sie (occeee9 45 Bi | EH | “CCT Pea EE 10 * BERBEEn/B7 a TLE FG E as N aC 8 bs eae 4aaee 8 (aan? 4aeeee gos Co 0. & Ta — (°C) C1680 ip (ma) 1243 Temperature Forward Current
QT PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS EE TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Otherwise Specified) (Cont'd) 7 ool ALN err ol Hoo § 0.90 na & 0.90 — Tt § oso {A FE oso {| WAT [vee =o34 Ele onl Cy | ves EF orf NE oom HTT CB eof PALS aoa LITT) <B soll | fie = soma TTT = sof Afi = roma [ITH = osof At TUT 8 col AIT TIL) 8 of CET S020 form id 8 oof ft Tin 2 ott Po 2 20 Ef me 5 or Wp 5 ox hd Pn comes | 2 EEL 10K 100K 1M 10K 100K 1M Ree — BASE RESISTANCE — (1) Ree — BASE RESISTANCE — (1) C1681 C1682 LA Th > | aw COCA i CHIN aan ai a 1 | € q OTL A : ill IN 3 8 a N
2 ATs | 2” om
= Ie = 2mA = Vec = 10V.
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10K 100K 1M o 10K 100K 1M o Ree — BASE RESISTANCE — () Rae — BASE RESISTANCE — (2) C1683 C1684 12, _ - (See Fig. 10) 2 }s'9 —_ ri = al | . g i | outeut % |! 08 - Ng Z 2 os I z a g oO 5 10 15 20 = lo—ima) 61685 cr296a 1-126
QT PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS eed TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Otherwise Specified) (Cont'd) PULSE WIDTH = 100 us DUTY CYCLE = 10% INPUT ov | | | | I ' OUTPUT I I t 80% | tf 10% | 1d i} ot i} Fy ton PRY to C1294 Fig. 11. Switching Time Waveforms 1. The current transfer ratio (1./l-) is the ratio of the detector collector current to the LED input current with Ver at 10 volts. 2. The frequency at which i, is 3 dB down from the 1 kHz value. 3. Rise time (t,) is the time required for the collector current to increase from 10% of its final value, to 90%. Fall time (t) is the time required for the collector current to decrease from 90% of its inital value, to 10%.