MCRP8PA-6V FS | Alldatasheet

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DESCRIPTION

The MCRP8PA-6V SCR provide high dv/dt rate with strong resistance to electromagnetic interface. They are especially recommended for use on residual current circuit breaker, straight hair, igniter etc. MAIN FEATURES Symbol Value Unit IT(RMS) 0.8 A IGT 30~80 A VDRM /VRRM 600 V ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Storage junction temperature range Tstg -40-150 Operating junction temperature range Tj -40-110 Repetitive peak off-state voltage VDRM 600 V Repetitive peak reverse voltage VRRM 600 V RMS on-state current IT(RMS) 0.8 A Non repetitive surge peak on-state current (tp=10ms) ITSM 8 A I2t value for fusing (tp=10ms) I2t 0.32 A 2s Critical rate of rise of on-state current dI/dt 50 A/ s Peak gate current (tp=20 s, Tj=110 ) IGM 0.2 A Peak gate power (tp=20 s, Tj=110 ) PGM 0.5 W Average gate power dissipation(Tj=110 ) P G(AV) 0.1 W G(3) A(2) K(1) SOT-23 SEMICONDUCTOR TECHNICAL DATA MCRP8PA-6V 2022. 04. 06 1/4Revision No : 0 Silicon Planar PNPN Thyristor (0.8A SCR) (TC=65℃)

ELECTRICAL CHARACTERISTICS (Tj =25°C unless otherwise specified) Symbol Test Condition Value Unit MIN. TYP . MAX. IGT VD=12V RL=33 80 A VGT - 0.6 0.8 V VGD VD=VDRM Tj=110 0.2 - - V IL IG=1.2 IGT - - 6 mA IH IT=0.05A - - 5 mA dV/dt V D=2/3VDRM Tj=110 RGK=1K 100 - - V/ s STATIC CHARACTERISTICS Symbol Parameter Value(MAX) Unit VTM I T=1.1A tp=380 s T j=25 1.5 V IDRM VD=VDRM VR=VRRM Tj=25 5 A IRRM Tj=110 100 A THERMAL RESISTANCES t i n U e u l a Vr e t e m a r a Pl o b m y S Rth(j-c) junction to case 75 /W

ORDERING INFORMATION

SCR 30~80uA 6 V V: SOT-23 2022. 04. 06 2/4Revision No : 0 MCRP8PA-6V 30 -

MillimetersRef. A B C D E F G H 2.25 0.30 2.55 0.50 0.089 0.115 0.075 0.012 0.100 0.020 0.038 0.13 0.005 0.30 0.55 0.012 0.052 2.92 1.90 1.33 0.022 2.82 3.02 1.80 2.00 0.40 2.40 0.08 1.20 0.15 1.40 0.42 0.094 0.111 0.119 0.071 0.079 0.016 0.047 0.055 0.035 0.041 0.003 0.006 0.017 SOT-23 C B G D F 2022. 04. 06 3/4Revision No : 0 MCRP8PA-6V 0.90 0.96 1.05 Inches

FIG.1 Maximum power dissi pation versus RMS on-state curr ent FIG.2: RMS on-state curren t versus case temperature IT(RMS) (A)P(w) 0.2 IT(RMS) (A) Tc ( )0 0 25 50 75 100 125 0.4 0.6 0.8 1.0 1.2 0.2 0.4 0.6 0.8 1.0 1.2 =180° SOT-23 FIG.3: Surge peak on-state current versus number of cycles FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corres ponging value of I t (dI/dt < 50A/ us) FIG.4: On-state characteristics (maximum values) 1 10 100 1000 Number of cycles0 ITSM (A) ITM (A) VTM (V) 0 1 2 3 4 5 0.1 Tj=25 Tj=Tjmax 0.01 0.1 1 10 100 0.1 ITSM (A), I t (A s) -40 0 40 80 120 IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25 ) 0.0 0.5 1.5 2.0 3.0 2 2 IH&IL 1.0 2.5 Tj( ) IGT tp(ms) I t ITSM One cycle tp=10ms 2022. 04. 06 4/4Revision No : 0 MCRP8PA-6V Typical Characteristics