MCR8SD DIGITRON | Alldatasheet
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Technical content
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phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20121228 MCR8SD, MCR8SM, MCR8SN SILICON CONTROLLED RECTIFIERS MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive off-state voltage(1) Peak repetitive reverse voltage (TJ = -40 to +110°C, sine wave, 50 to 60Hz, gate open) MCR8SD MCR8SM MCR8SN VDRM VRRM 400 600 800 V On-state RMS current (180° conduction angles, TC = 80°C) IT(RMS) 8 A Peak non-repetitive surge current (one half-cycle, sine wave, 60Hz, T J = 110°C) ITSM 80 A Circuit fusing (t = 8.3ms) I2t 26.5 A2s Forward peak gate power (pulse width ≤ 1.0µs, TC = 80°C) PGM 5 W Forward average gate power (t = 8.3ms, TC = 80°C) PG(AV) 0.5 W Forward peak gate current (pulse width ≤ 1.0µs, TC = 80°C) IGM 2 A Operating temperature range TJ -40 to +110 °C Storage temperature range Tstg -40 to +150 °C Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case RӨJC 2.2 °C/W Thermal resistance, junction to ambient RӨJA 62.5 °C/W Maximum lead temperature for soldering purposes 1/8” from case for 10s TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak forward blocking current or reverse blocking current(2) (VD = Rated VDRM or VRRM, RGK = 1kΩ) TJ = 25°C TJ = 110°C IDRM, IRRM 500 µA ON CHARACTERISTICS Peak on-state voltage(3) (ITM = 16A) VTM 1.8 V Gate trigger current (continuous dc) (4) (VD = 12V, RL = 100Ω) IGT 5.0 200 µA Holding current (4) (VD = 12V, gate open, initiating current = 200mA) IH 0.5 6.0 mA Latch current (4) (VD = 12V, IG = 200µA) IL 0.6 8.0 mA Gate trigger voltage (continuous dc) (4) (VD = 12V, RL = 100Ω) TJ = 25°C TJ = -40°C VGT 0.3 0.65 1.0 1.5 V * Pulse width ≤ 2.0ms, duty cycle ≤ 2%.
phone +1.908.245-7200 MCR8SD, MCR8SM, MCR8SN SILICON CONTROLLED RECTIFIERS DYNAMIC CHARACTERISTICS Critical rate of rise of off-state voltage (VD = 67% VDRM, RGK = 1KΩ, CGK = 0.1µF, TJ = 110°C) dv/dt 5.0 - V/µs Critical rate of rise of on-state current PK = 50A, PW = 40µsec, diG/dt = 1 A/µsec, Igt = 10mA) di/dt
100 A/µs
Note 2: RGK = 1000 ohms included in measurement. Note 3: Indicates pulse test: pulse width ≤ 2.0ms, duty cycle ≤ 2%. Note 4: Does not include RGK in measurement. MECHANICAL CHARACTERISTICS Case TO-220AB Marking Alpha-numeric Pin out See below Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20121228
phone +1.908.245-7200 MCR8SD, MCR8SM, MCR8SN SILICON CONTROLLED RECTIFIERS fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20121228
phone +1.908.245-7200 MCR8SD, MCR8SM, MCR8SN SILICON CONTROLLED RECTIFIERS fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20121228