MCR8D DIGITRON | Alldatasheet
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phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130108 MCR8D, MCR8M, MCR8N SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive off-state voltage(1) Peak repetitive reverse voltage (TJ = -40 to +125°C) MCR8D MCR8M MCR8N V DRM VRRM 400 600 800 V On-state RMS current (all conduction angles) IT(RMS) 8 A Peak non-repetitive surge current (one half-cycle, 60Hz, TJ = 125°C) ITSM 80 A Circuit fusing (t = 8.3ms) I2t 26.5 A2s Peak gate power (pulse width ≤ 1.0µs, TC = 80°C) PGM 5 W Average gate power (t = 8.3ms, TC = 80°C) PG(AV) 0.5 W Peak gate current (pulse width ≤ 1.0µs, TC = 80°C) IGM 2 A Operating temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case RӨJC 2.0 °C/W Thermal resistance, junction to ambient RӨJA 62.5 °C/W Maximum lead temperature for soldering purposes 1/8” from case for 10s T L 260 °C Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak forward blocking current Peak reverse blocking current (VAK = Rated VDRM or VRRM, gate open) TJ = 25°C TJ = 125°C IDRM IRRM 0.01 2.0 mA ON CHARACTERISTICS Peak on-state voltage * TM = 16A) VTM 1.8 V Gate trigger current (continuous dc) (VD = 12V, RL = 100Ω) IGT 2.0 7.0 15 mA Gate trigger voltage (continuous dc) (VD = 12V, RL = 100Ω) VGT 0.5 0.65 1.0 V Holding current (anode voltage = 12V) IH 4.0 22 30 mA DYNAMIC CHARACTERISTICS Critical rate of rise of off-state voltage (VD = rated VDRM, exponential waveform, gate open, TJ = 125°C) dv/dt 200 - V/µs * Pulse width ≤ 2.0ms, duty cycle ≤ 2%.
phone +1.908.245-7200 MCR8D, MCR8M, MCR8N SILICON CONTROLLED RECTIFIERS MECHANICAL CHARACTERISTICS Case TO-220AB Marking Alpha-numeric Pin out See below fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130108