MCR8DSM ONSEMI | Alldatasheet

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Technical content

Features

  • Small Size
  • Passivated Die for Reliability and Uniformity
  • Low Level Triggering and Holding Characteristics
  • Available in Two Package Styles Surface Mount Lead Form − Case 369C Miniature Plastic Package − Straight Leads − Case 369
  • Epoxy Meets UL 94 V−0 @ 0.125 in
  • ESD Ratings: Human Body Model, 3B /C0117 8000 V Machine Model, C /C0117 400 V
  • Pb−Free Packages are Available MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR8DSM MCR8DSN VDRM, VRRM 600 800 V On−State RMS Current (180° Conduction Angles; T C = 90°C) IT(RMS) 8.0 A Average On−State Current (180° Conduction Angles; TC = 90°C) IT(AV) 5.1 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) ITSM 90 A Circuit Fusing Consideration (t = 8.3 msec) I2t 34 A2sec Forward Peak Gate Power (Pulse Width ≤ 1.0 /C0109sec, TC = 90°C) PGM 5.0 W Forward Average Gate Power (t = 8.3 msec, TC = 90°C) PG(AV) 0.5 W Forward Peak Gate Current (Pulse Width ≤ 1.0 /C0109sec, TC = 90°C) IGM 2.0 A Operating Junction Temperature Range TJ −40 to 110 °C Storage Temperature Range Tstg −40 to 150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. V DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. SCRs

8 AMPERES RMS

600 − 800 VOLTS Preferred devices are recommended choices for future use and best overall value. K G A PIN ASSIGNMENT Anode Gate Cathode

4 Anode

Y = Year WW = Work Week CR8DSx = Device Code x= M or N G = Pb−Free Package

4 YWW

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

MCR8DSM, MCR8DSN http://onsemi.com THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 2) R/C0113JC R/C0113JA R/C0113JA 2.2 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM; RGK = 1.0 k/C0087) (Note 3) T J = 25°C TJ = 110°C IDRM IRRM − 500 /C0109A ON CHARACTERISTICS Peak Reverse Gate Blocking Voltage (IGR = 10 /C0109A) VGRM 10 12.5 18 V Peak Reverse Gate Blocking Current (VGR = 10 V) IRGM − − 1.2 /C0109A Peak Forward On−State Voltage (Note 4) (ITM = 16 A) VTM − 1.4 1.8 V Gate Trigger Current (Continuous dc) (Note 5) (VD = 12 V, RL = 100 /C0087)T J = 25°C TJ = −40°C IGT 5.0 200 300 /C0109A Gate Trigger Voltage (Continuous dc) (Note 5) (VD = 12 V, RL = 100 /C0087)T J = 25°C TJ = −40°C TJ = 110°C VGT 0.45 0.2 0.65 1.0 1.5 V Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open) T J = 25°C TJ = −40°C IH 0.5 1.0 6.0 mA Latching Current (VD = 12 V, IG = 2.0 mA) T J = 25°C TJ = −40°C IL 0.5 1.0 6.0 mA Total Turn−On Time (Source Voltage = 12 V, RS = 6.0 k/C0087, IT = 16 A(pk), RGK = 1.0 k/C0087) (VD = Rated VDRM, Rise Time = 20kns, Pulse Width = 10 /C0109s) tgt − 2.0 5.0 /C0109s DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage (VD = 0.67 X Rated VDRM, Exponential Waveform, RGK = 1.0 k/C0087, TJ = 110°C) dv/dt 2.0 10 − V//C0109s 2. Surface mounted on minimum recommended pad size. 3. Ratings apply for negative gate voltage or RGK = 1.0 k/C0087. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 4. Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. 5. R GK current not included in measurements. Device Package Shipping† MCR8DSMT4 DPAK 2500 / Tape & Reel MCR8DSMT4G DPAK (Pb−Free) MCR8DSNT4 DPAK MCR8DSNT4G DPAK (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Figure 1. Average Current Derating Figure 2. On−State Power Dissipation

MCR8DSM, MCR8DSN http://onsemi.com PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O D A K B RV S F L G 2 PL M0.13 (0.005) T E C U J H −T− SEATING PLANE Z DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.180 0.215 4.57 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 123 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 /C0466mm inches/C0467SCALE 3:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 MCR8DSM/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.