MCR729-5 MOTOROLA | Alldatasheet
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MOTOROLA SC (DIODES/OPTO) 25E D MM 6367255 0081147 O ml 7T- ass MCRG49AP1-10 ©: (See 2N2574).- - Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors 9 v MCR729-5 « «fast switching, high-voltage Silicon Controlled Rectifiers especially designed for thru pulse modulator applications in radar and other similar equipment. © High-Voltage: VpRM = 300 to 800 Volts MCR729-10 ‘© Turn-On Times: in Nanosecond Range © Repetitive Pulse Current to 100 Amps © Stable Switching Characteristics Over an Operating Temperature Range From SCR: 788 to + 108°C 5 AMPERES RMS @ Pulse Repetition Rates as High as 10,000 pps 300 thru 800 VOLTS a pop —ox CASE 63-03 (10-64) . ‘STYLE 1 MAXIMUM RATINGS (Ty = 105°C unless otherwise noted.) RM haractoristlo Symbol [Value [unit | Peak Repetitive Forward Blocking Voltage, Note 1 VDRM Volts MCR729-5 300 6 400 7 500 8 600 J 700 10 800 | Peak Repattive Reverse Blocking Voltage, Nott | Vanm | 60 | Vote | | ForwordCurrentaMs ims) | | Amos [ Average ForwardPowor Pay || Watts | Peak Repetitive On-Stete Control (PW = ins) Tam | 100 | Amps [Peak Forward GatePower TP | 20 ats | Averege Forward GatoPowor TPA) | ot | watt | Peak Forward Gate Curent te || As | Peak Forward GeteVolge Lem | to | vot | Peak Reverso GatoVoltago Tam || vot | Opereting Junction TomperaturaRenge | ta | eto tos] | [Storage Temperature Renge Tat (| -85to +tg0 [sud tove ivi Note 1. Ratings apply for zero or negative gate voltages. Dovices shall not have a positive bias to the gate concurrently with a negative potential on ‘the anode. Devices should not be tested with a constant current source for forward and reverse blocking voltages such that the applied woage exceeds the rllags, CEE ne an ee ee a Re sn a pa oe Cee MOTOROLA THYRISTOR DEVICE DATA : 3-286
MOTOROLA SC (DIODES/OPTO) 25E D M@@ b3b7255 0061168 2 mm MCR729-5 thru MCR729-10 |e ge-/5 > T. AS-/ ELECTRICAL CHARACTERISTICS (Tc = 26°C unless otherwise mtoted.) [earastorsnic TT Symbot tain [tye [Max [unit | Peak Forward or Reverse Blocking Current 1ORM: [RRM (Rated VpaM oF VanM, gate open) To = 105°C Gate Trigger Current (Continuous de) let 10 (Vp = 7 Vdo, Ri. = 100 ohms) Gate Trigger Voltage (Continuous dc) Ver Volts (Vp = 7 Vdc, Ry = 100 ohms) Holding Current. (Vp = 7 Vdc, gate open) Forward On Voltage Vim Volts (itm = 5A, PW <1 ms, Duty Cycle < 1%) Dynamlo Forward On Voltage vIM Volts (0.6 us after 60% pt, Ig = 200 mA, Vp = Rated VoRM: !F{puise) = 80 Amps) Turn-On Time (tg +t) ton {Ig = 200 mA, Vp = Rated Voam) {itm = 30 Amps peak) 200 (iTM_= 100 Amps peak) 400 Turn-On Time Variation =600 (To = +28°C to +105°C and —68°C to +25°C, It = 30 A) Pulse Turn-Off Time (e(pulso) = 30 Amps, lreverse ~ 0) inductive charging circuit) Forward Voltage Application Rate (Linear Rate of Rise) dvidt Vins (Vp = Rated VoRM, gate open, Tc = 105°C) [Thermal Resistance Wuneionto Gan Si wae PP ee | P| MOTOROLA THYRISTOR DEVICE DATA 3-287