MCR703A ONSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

  • Small Size
  • Passivated Die Surface for Reliability and Uniformity
  • Low Level Triggering and Holding Characteristics
  • Recommend Electrical Replacement for C106
  • Surface Mount Package − Case 369C
  • To Obtain “DPAK” in Straight Lead Version (Shipped in Sleeves): Add ’1’ Suffix to Device Number, i.e., MCR706A1
  • Epoxy Meets UL 94 V−0 @ 0.125 in
  • ESD Ratings: Human Body Model, 3B /C0117 8000 V Machine Model, C /C0117 400 V
  • Pb−Free Packages are Available MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Max Unit Peak Repetitive Off−State Voltage (Note 1) (TC = −40 to +110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR703A MCR706A MCR708A VDRM, VRRM 100 400 600 V Peak Non-Repetitive Off−State Voltage (Sine Wave, 50 to 60 Hz, Gate Open, T C = −40 to +110°C) MCR703A MCR706A MCR708A VRSM 150 450 650 V On−State RMS Current (180° Conduction Angles; T C = 90°C) IT(RMS) 4.0 A Average On−State Current (180° Conduction Angles) T C = −40 to +90°C TC = +100°C IT(AV) 2.6 1.6 A Non-Repetitive Surge Current (1/2 Sine Wave, 60 Hz, TJ = 110°C) (1/2 Sine Wave, 1.5 ms, TJ = 110°C) ITSM A Circuit Fusing (t = 8.3 msec) I2t 2.6 A2sec Forward Peak Gate Power (Pulse Width ≤ 1.0 /C0109sec, TC = 90°C) PGM 0.5 W Forward Average Gate Power (t = 8.3 msec, TC = 90°C) PG(AV) 0.1 W Forward Peak Gate Current (Pulse Width ≤ 1.0 /C0109sec, TC = 90°C) IGM 0.2 A Operating Junction Temperature Range TJ −40 to +110 °C Storage Temperature Range Tstg −40 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. SCRs

4.0 AMPERES RMS

100 − 600 VOLTS K G A PIN ASSIGNMENT Anode Cathode Gate

4 Anode

Preferred devices are recommended choices for future use and best overall value. DPAK CASE 369C STYLE 2 MARKING DIAGRAMS 1 2 YWW CR 70xAG DPAK−3 CASE 369D STYLE 21 2 3 YWW CR 70xAG See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com Y = Year WW = Work Week 70xA = Device Code x = 3, 6 or 8 G = Pb−Free Package

http://onsemi.com THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case R/C0113JC 8.33 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) R/C0113JA 80 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C 2. Case 369C when surface mounted on minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM; RGK = 1 K/C0087)T C = 25°C TC = 110°C IDRM, IRRM 200 /C0109A ON CHARACTERISTICS Peak Forward “On” Voltage (ITM = 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle) VTM − − 2.2 V Gate Trigger Current (Continuous dc) (Note 3) (VAK = 12 Vdc, RL = 24 /C0087) TC = 25°C TC = −40°C IGT 300 /C0109A Gate Trigger Voltage (Continuous dc) (Note 3) T C = 25°C (VAK = 12 Vdc, RL = 24 /C0087)T C = −40°C VGT − 0.8 1.0 V Gate Non-Trigger Voltage (Note 3) (VAK = 12 Vdc, RL = 100 /C0087, TC = 110°C) VGD 0.2 − − V Holding Current (VAK = 12 Vdc, Gate Open) TC = 25°C (Initiating Current = 200 mA) TC = −40°C IH 5.0 mA Peak Reverse Gate Blocking Voltage (IGR = 10 /C0109A) VRGM 10 12.5 18 V Peak Reverse Gate Blocking Current (VGR = 10 V) IRGM − − 1.2 /C0109A Total Turn-On Time (Source Voltage = 12 V, RS = 6 k/C0087) (ITM = 8.2 A, IGT = 2 mA, Rated VDRM) (Rise Time = 20 ns, Pulse Width = 10 /C0109s) tgt − 2.0 − /C0109s DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage (VD = Rated VDRM, RGK = 1 k/C0087, Exponential Waveform, T C = 110°C) dv/dt − 10 − V//C0109s Repetitive Critical Rate of Rise of On−State Current (Cf = 60 Hz, IPK = 30 A, PW = 100 /C0109s, diG/dt = 1 A//C0109s) di/dt − − 100 A//C0109s 3. R GK current not included in measurement. Device Package Type Package Shipping† MCR703AT4 DPAK 369C 2500 Tape & Reel MCR703AT4G DPAK 369C (Pb−Free)

2500 Tape & Reel

MCR706AT4 DPAK 369C 2500 Tape & Reel MCR706AT4G DPAK 369C (Pb−Free) MCR708A DPAK 369C 2500 Tape & Reel MCR708AG DPAK 369C (Pb−Free) MCR708A1 DPAK−3 369D 75 Units / Rail MCR708A1G DPAK−3 369D (Pb−Free)

75 Units / Rail

MCR708AT4 DPAK 369C 2500 Tape & Reel MCR708AT4G DPAK 369C (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

http://onsemi.com PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O D A K B RV S F L G 2 PL M0.13 (0.005) T E C U J H −T− SEATING PLANE Z DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.180 0.215 4.57 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 12 3 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 /C0466mm inches/C0467SCALE 3:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN

http://onsemi.com PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B 123 V S A K −T− SEATING PLANE R B F G D 3 PL M0.13 (0.005) T C E J H DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 G 0.090 BSC 2.29 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Z STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 MCR703A/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative