MCR69_04 ONSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Glass-Passivated Junctions for Greater Parameter Stability and Reliability
  • Center-Gate Geometry for Uniform Current Spreading Enabling High Discharge Current
  • Small Rugged, Thermowatt Package Constructed for Low Thermal Resistance and Maximum Power Dissipation and Durability
  • High Capacitor Discharge Current, 750 Amps
  • Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = 40 to +125°C, Gate Open) MCR69−2 MCR69−3 VDRM, VRRM 100 V Peak Discharge Current (Note 2) ITM 750 A On-State RMS Current (180° Conduction Angles; TC = 85°C) IT(RMS) 25 A Average On-State Current (180° Conduction Angles; TC = 85°C) IT(AV) 16 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) ITSM 300 A Circuit Fusing Considerations (t = 8.3 ms)I2t 375 A2s Forward Peak Gate Current IGM 2.0 A Forward Peak Gate Power PGM 20 W Forward Average Gate Power (t = 8.3 ms, TC = 85°C) PG(AV) 0.5 W Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Mounting Torque − 8.0 in. lb. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. V DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Ratings apply for t w = 1 ms. See Figure 1 for ITM capability for various duration of an exponentially decaying current waveform, tw is defined as 5 time constants of an exponentially decaying current pulse. 3. Test Conditions: IG = 150 mA, VD = Rated VDRM , ITM = Rated Value, TJ = 125°C. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SCRs

25 AMPERES RMS

Device Package Shipping †

ORDERING INFORMATION

MCR69−2 TO220AB 500/Box K G A TO−220AB CASE 221A STYLE 3 2 3 PIN ASSIGNMENT Anode Gate Cathode

4 Anode

MCR69−3 TO220AB 500/Box MCR69−3G TO220AB (Pb−Free) 500/Box MCR69−2G TO220AB (Pb−Free) 500/Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com MARKING DIAGRAM MCR69x A = Assembly Location Y = Year WW = Work Week MCR69 = Device Code x = 2 or 3 AKA = Location Code AKA AYWW

MCR69−2, MCR69−3 http://onsemi.com THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case R JC 1.5 °C/W Thermal Resistance, Junction−to−Ambient R JA 60 °C/W Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 SecondsTL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM , Gate Open) T J = 25°C TJ = 125°C IDRM , IRRM 2.0 A mA ON CHARACTERISTICS Peak Forward On-State Voltage (ITM = 50 A) (Note 4) (ITM = 750 A, tw = 1 ms) (Note 5) VTM 6.0 1.8 V Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) IGT 2.0 7.0 30 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) VGT − 0.65 1.5 V Gate Non−Trigger Voltage (VD = 12 Vdc, RL = 100 , TJ = 125°C) VGD 0.2 0.40 − V Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open) IH 3.0 15 50 mA Latching Current (VD = 12 Vdc, IG = 150 mA) IL − − 60 mA Gate Controlled Turn-On Time (Note 6) (VD = Rated VDRM , IG = 150 mA) (ITM = 50 A Peak) tgt − 1.0 − s DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM , Gate Open, Exponential Waveform, TJ = 125°C) dv/dt 10 − − V/s Critical Rate-of-Rise of On-State Current IG = 150 mA T J = 125°C di/dt − − 100 A/s 4. Pulse duration 300 s, duty cycle 2%. 5. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined as 5 time constants of an exponentially decaying current pulse. 6. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.

MCR69−2, MCR69−3 http://onsemi.com PACKAGE DIMENSIONS TO−220AB CASE 221A−07 ISSUE AA STYLE 3: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 A K L V G D N Z H Q FB 123 −T− SEATING PLANE S R J U T C

MCR69−2, MCR69−3 http://onsemi.com ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone : 81−3−5773−3850 MCR69/D LITERATURE FULFILLMENT : Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone : 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.