MCR68 DIGITRON | Alldatasheet
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phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130115 MCR68 SERIES SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive off-state voltage(1) (TJ = -40 to +125°C, gate open) MCR68-1 MCR68-2 MCR68-3 V DRM VRRM 100 V Peak discharge current (2) ITM 300 A On-state RMS current (180° conduction angles, TC = 85°C) IT(RMS) 12 A Average on-state current (180° conduction angles, TC = 85°C) IT(AV) 8.0 A Peak non-repetitive surge current (half-cycle, sine wave, 60Hz, TJ = 125°C) ITSM 100 A Circuit fusing consideration (t = 8.3ms) I2t 40 A2s Forward peak gate current (pulse width ≤ 1.0µs, TC = 85°C) IGM 2.0 A Forward peak gate power (pulse width ≤ 1.0µs, TC = 85°C) PGM 20 W Forward average gate power (t = 8.3ms, TC = 85°C) PG(AV) 0.5 W Operating junction temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C Mounting torque - 8.0 In. lb. Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Note 2: Ratings apply for tw = 1ms, THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case RӨJC 2.0 °C/W Thermal resistance, junction to ambient RӨJA 60 °C/W Maximum lead temperature for soldering purposes 1/8” from case for 10s TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak forward or reverse blocking current (VAK = Rated VDRM or VRRM, gate open) TJ = 25°C TJ = 125°C IDRM, IRRM 2.0 µA mA ON CHARACTERISTICS Peak forward on-state voltage (ITM = 24A)(3) (ITM = 300A, tw = 1ms)(4) VTM 6.0 2.2 V Gate trigger current (continuous dc) (VD = 12V, RL = 100Ω) IGT 2.0 7.0 30 mA Gate trigger voltage (continuous dc) (VD = 12V, RL = 100Ω) VGT 0.65 1.5 V Gate non-trigger voltage D = 12V, RL = 100Ω, TJ = 125°C) VGD 0.2 0.40 - V
phone +1.908.245-7200 MCR68 SERIES SILICON CONTROLLED RECTIFIERS Holding current (VD = 12V, gate open, initiating current = 200mA) IH 3.0 50 mA Latching current (VD = 12V, IG = 150mA) IL 60 mA Gate controlled turn-on time(5) (VD = rated VDRM, IG = 150mA) (ITM = 24A peak) tgt 1.0 - µs DYNAMIC CHARACTERISTICS Critical rate of rise of off-state voltage D = rated VDRM, exponential waveform, gate open, TJ = 125°C) dv/dt - V/µs Critical rate of rise of on-state current G = 150mA, TJ = 125°C) di/dt
75 A/µs
Note 3: Pulse width ≤ 300µs, duty cycle ≤ 2%. Note 4: Ratings apply for tw = 1ms. Note 5: The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance. MECHANICAL CHARACTERISTICS Case TO-220AB Marking Alpha-numeric Pin out See below fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130115
phone +1.908.245-7200 MCR68 SERIES SILICON CONTROLLED RECTIFIERS fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130115
phone +1.908.245-7200 MCR68 SERIES SILICON CONTROLLED RECTIFIERS fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130115