MCR25D ONSEMI | Alldatasheet

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Technical content

 Semiconductor Components Industries, LLC, 1999 February, 2000 – Rev. 3

1 Publication Order Number:

/C0077/C0067/C0082/C0050/C0053/C0068/C0044 /C0077/C0067/C0082/C0050/C0053/C0077/C0044 /C0077/C0067/C0082/C0050/C0053/C0078 Preferred Device /C0083/C0105/C0108/C0105/C0099/C0111/C0110 /C0067/C0111/C0110/C0116/C0114/C0111/C0108/C0108/C0101/C0100 /C0082/C0101/C0099/C0116/C0105/C0102/C0105/C0101/C0114/C0115 Reverse Blocking Thyristors Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed.

  • Blocking V oltage to 800 V olts
  • On-State Current Rating of 25 Amperes RMS
  • High Surge Current Capability — 300 Amperes
  • Rugged, Economical TO–220AB Package
  • Glass Passivated Junctions for Reliability and Uniformity
  • Minimum and Maximum Values of IGT , VGT , and IH Specified for Ease of Design
  • High Immunity to dv/dt — 100 V/µsec Minimum @ 125°C
  • Device Marking: Logo, Device Type, e.g., MCR25D, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage(1) (TJ = –40 to 125°C, Sine Wave, 50 to

60 Hz, Gate Open) MCR25D

VDRM, VRRM 400 600 800 Volts On-State RMS Current (180° Conduction Angles; TC = 80°C) IT(RMS) 25 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) ITSM 300 A Circuit Fusing Consideration (t = 8.3 ms) I2t 373 A2sec Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) PGM 20.0 Watts Forward Average Gate Power (t = 8.3 ms, TC = 80°C) PG(AV) 0.5 Watt Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) IGM 2.0 A Operating Junction Temperature Range TJ –40 to +125 Storage Temperature Range Tstg –40 to +150 (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. SCRs

25 AMPERES RMS

Preferred devices are recommended choices for future use and best overall value. http://onsemi.com TO–220AB CASE 221A STYLE 3 2 3 PIN ASSIGNMENT Anode Gate Cathode

4 Anode

K G A Device Package Shipping

ORDERING INFORMATION

MCR25D TO220AB 50 Units/Rail MCR25M TO220AB MCR25N TO220AB

50 Units/Rail

MCR25D, MCR25M, MCR25N http://onsemi.com THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance — Junction to Case — Junction to Ambient R θJC R θJA 1.5 62.5 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM , Gate Open) T J = 25°C TJ = 125°C IDRM IRRM — 0.01 2.0 mA ON CHARACTERISTICS Peak Forward On-State Voltage* (ITM = 50 A) VTM — — 1.8 Volts Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω ) IGT 4.0 12 30 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω ) VGT 0.5 0.67 1.0 Volts Holding Current (VD =12 Vdc, Initiating Current = 200 mA, Gate Open)IH 5.0 13 40 mA Latching Current (VD = 12 V, IG = 30 mA) IL — 35 80 mA DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off–State Voltage (VD = 67% of Rated VDRM , Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 100 250 — V/µs Critical Rate of Rise of On–State Current (IPK = 50 A, Pw = 30 µsec, diG/dt = 1 A/µsec, Igt = 50 mA) di/dt — — 50 A/µs *Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

Figure 9. Typical Exponential Static dv/dt Figure 10. Typical Exponential Static dv/dt Versus Junction Temperature. Figure 11. Maximum Non–Repetitive

1 CYCLE

MCR25D, MCR25M, MCR25N http://onsemi.com PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 Q H Z L V G N A K 12 3 D SEATING PLANE–T– C ST U R J TO–220AB CASE 221A–09 ISSUE Z STYLE 3: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE

MCR25D, MCR25M, MCR25N http://onsemi.com Notes

MCR25D, MCR25M, MCR25N http://onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–spanish@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone : 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–asia@hibbertco.com JAPAN : ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–8549 Phone : 81–3–5740–2745 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. MCR25/D NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone : (+1) 303–308–7140 (M–F 1:00pm to 5:00pm Munich Time) Email: ONlit–german@hibbertco.com French Phone : (+1) 303–308–7141 (M–F 1:00pm to 5:00pm Toulouse Time) Email: ONlit–french@hibbertco.com English Phone: (+1) 303–308–7142 (M–F 12:00pm to 5:00pm UK Time) Email: ONlit@hibbertco.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, England, Ireland