MCR225-8FP ONSEMI | Alldatasheet

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© Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 3

1 Publication Order Number:

MCR225−8FP, MCR225−10FP Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.

  • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability
  • Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability
  • Blocking V oltage to 800 V olts
  • 300 A Surge Current Capability
  • Insulated Package Simplifies Mounting
  • Indicates UL Registered — File #E69369
  • Device Marking: Logo, Device Type, e.g., MCR225−8FP, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage(1) (TJ = −40 to +125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR225−8FP MCR225−10FP VDRM, VRRM 600 800 Volts On-State RMS Current (TC = +70°C) (180° Conduction Angles) IT(RMS) 25 Amps Peak Non−repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TC = +70°C) ITSM 300 Amps Circuit Fusing (t = 8.3 ms) I2t 375 A2s Forward Peak Gate Power (TC = +70°C, Pulse Width /C0118 1.0 μs) PGM 20 Watts Forward Average Gate Power (TC = +70°C, t = 8.3 ms) PG(AV) 0.5 Watt Forward Peak Gate Current (TC = +70°C, Pulse Width /C0118 1.0 μs) IGM 2.0 Amps RMS Isolation Voltage (TA = 25°C, Relative Humidity /C0112 20%) () V(ISO) 1500 Volts Operating Junction Temperature Range TJ −40 to +125 Storage Temperature Range Tstg −40 to +150 (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ISOLATED SCRs

25 AMPERES RMS

Preferred devices are recommended choices for future use and best overall value. Device Package Shipping

ORDERING INFORMATION

MCR225−8FP ISOLATED TO220FP 500/Box http://onsemi.com MCR225−10FP ISOLATED TO220FP 500/Box ISOLATED TO−220 Full Pack CASE 221C STYLE 2 PIN ASSIGNMENT Anode Gate Cathode K G A

MCR225−8FP , MCR225−10FP http://onsemi.com THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.5 °C/W Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VD = Rated VDRM, VRRM; Gate Open) T J = 25°C TJ = 125°C IDRM, IRRM — μA mA ON CHARACTERISTICS Peak Forward On−State Voltage(1) (ITM = 50 A) VTM — — 1.8 Volts Gate Trigger Current (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms) IGT — — 40 mA Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms) VGT — 0.8 1.5 Volts Gate Non-Trigger Voltage (VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C) VGD 0.2 — — Volts Holding Current (VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) IH — 20 40 mA Turn-On Time (ITM = 25 A, IGT = 40 mAdc) tgt — 1.5 — μs Turn-Off Time (VDRM = Rated Voltage) (ITM = 25 A, IR = 25 A) (ITM = 25 A, IR = 25 A, TJ = 125°C) tq μs DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (Gate Open, VD = Rated VDRM, Exponential Waveform) dv/dt — 100 — V/μs (1) Pulse Test: Pulse Width = 1.0 ms, Duty Cycle ≤ 2%.

Figure 1. Average Current Derating Figure 2. Maximum On−State Power Dissipation

1 CYCLE

Figure 3. Maximum Forward Voltage Figure 4. Maximum Non-Repetitive Surge Current Figure 5. Thermal Response

MCR225−8FP , MCR225−10FP http://onsemi.com PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. −Y− −B− −T− Q P A K H Z G L F D 3 PL MBM0.25 (0.010) Y E N S J R C SEATING PLANE DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.680 0.700 17.28 17.78 B 0.388 0.408 9.86 10.36 C 0.175 0.195 4.45 4.95 D 0.025 0.040 0.64 1.01 E 0.340 0.355 8.64 9.01 F 0.140 0.150 3.56 3.81 G 0.100 BSC 2.54 BSC H 0.110 0.155 2.80 3.93 J 0.018 0.028 0.46 0.71 K 0.500 0.550 12.70 13.97 L 0.045 0.070 1.15 1.77 P 0.270 0.290 6.86 7.36 Q 0.480 0.500 12.20 12.70 R 0.090 0.120 2.29 3.04 S 0.105 0.115 2.67 2.92 Z 0.070 0.090 1.78 2.28 123 STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE ISOLATED TO−220 Full Pack CASE 221C−02 ISSUE C ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 MCR225FP/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative