MCR22-6_06 ONSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
Features
- 150 A for 2 /C0109s Safe Area
- High dv/dt
- Very Low Forward “On” V oltage at High Current
- Low-Cost TO-226 (TO-92)
- Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (RGK = IK, TJ = /C004240 to +110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR22−6 MCR22−8 VDRM, VRRM 400 600 V On-State Current RMS (180° Conduction Angles, T C = 80°C) IT(RMS) 1.5 A Peak Non-repetitive Surge Current, @TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz) ITSM 15 A Circuit Fusing Considerations (t = 8.3 ms) I2t 0.9 A2s Forward Peak Gate Power (Pulse Width ≤ 1.0 /C0109sec, TA = 25°C) PGM 0.5 W Forward Average Gate Power (t = 8.3 msec, TA = 25°C) PG(AV) 0.1 W Forward Peak Gate Current (Pulse Width ≤ 1.0 /C0109s, TA = 25°C) IFGM 0.2 A Reverse Peak Gate Voltage (Pulse Width ≤ 1.0 /C0109s, TA = 25°C) VRGM 5.0 V Operating Junction Temperature Range @ Rated VRRM and VDRM TJ −40 to +110 °C Storage Temperature Range Tstg −40 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case R/C0113JC 50 °C/W Thermal Resistance, Junction−to−Ambient R/C0113JA 160 °C/W Lead Solder Temperature (Lead Length /C0113 1/16″ from case, 10 S Max) TL +260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SCRs
1.5 AMPERES RMS
Preferred devices are recommended choices for future use and best overall value. TO−92 (TO−226) CASE 029 STYLE 10 PIN ASSIGNMENT Gate Anode Cathode K G A See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
22−x AYWW /C0071 /C0071 MARKING DIAGRAMS MCR22−x = Device Code x = 6 or 8 A = Assembly Location Y = Year WW = Work Week /C0071 = Pb−Free Package (Note: Microdot may be in either location) http://onsemi.com
MCR22−6, MCR22−8 http://onsemi.com ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM; RGK = 1000 /C0087)T C = 25°C TC = 110°C IDRM, IRRM 200 /C0109A /C0109A ON CHARACTERISTICS Peak Forward On−State Voltage (Note 2) (ITM = 1 A Peak) VTM − 1.2 1.7 V Gate Trigger Current (Continuous dc) (Note 3) T C = 25°C (VAK = 6 Vdc, R L = 100 /C0087)T C = −40°C IGT − 200 500 /C0109A Gate Trigger Voltage (Continuous dc) (Note 3) T C = 25°C (VAK = 7 Vdc, R L = 100 /C0087)T C = −40°C VGT − 0.8 1.2 V Gate Non−Trigger Voltage (Note 2) (VAK = 12 Vdc, R L = 100 /C0087)T C = 110°C VGD 0.1 − − V Holding Current (VAK = 12 Vdc, Gate Open) T C = 25°C Initiating Current = 200 mA T C = −40°C IH 2.0 5.0 mA DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage (TC = 110°C) dv/dt − 25 − V//C0109s 2. Pulse Width =1.0 ms, Duty Cycle /C01181%. 3. R GK Current not included in measurement. + Current + Voltage VTM IDRM at VDRM IH Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak on State Voltage IH Holding Current Voltage Current Characteristic of SCR Anode + on state Reverse Blocking Region (off state) Reverse Avalanche Region Anode − Forward Blocking Region IRRM at VRRM (off state)
Figure 9. Device Positioning on Tape
- Maximum alignment deviation between leads not to be greater than 0.2 mm.
- Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
- Component lead to tape adhesion must meet the pull test requirements.
- Maximum non−cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
- Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
- No more than 1 consecutive missing component is permitted.
- A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
- Splices will not interfere with the sprocket feed holes.
MCR22−6, MCR22−8 http://onsemi.com ORDERING & SHIPPING INFORMATION: MCR22 Series Packaging Options, Device Suffix U.S. Europe Equivalent Shipping† Description of TO−92 Tape Orientation MCR22−8RL1 2000 / Tape & Reel Flat side of TO−92 and adhesive tape visible MCR22−8RL1G MCR22−6
5000 Units / Box N/A, Bulk
MCR22−6G MCR22−8 MCR22−8G MCR22−6RLRA 2000 / Tape & Reel Round side of TO−92 and adhesive tape visible MCR22−6RLRAG MCR22−6RLRP 2000 / Tape & Ammo Pack Flat side of TO−92 and adhesive tape visible MCR22−6RLRPG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
MCR22−6, MCR22−8 http://onsemi.com PACKAGE DIMENSIONS CASE 29−11 ISSUE AL TO−92 (TO−226) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE R A P J L B K G H SECTION X−X CV D N N XX SEATING PLANE DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 N 0.080 0.105 2.04 2.66 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 MCR22−6/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative