MCR218 ONSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Glass-Passivated Junctions
  • Blocking V oltage to 400 V olts
  • TO-220 Construction − Low Thermal Resistance, High Heat Dissipation and Durability
  • Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = /C004240 to 125°C, Gate Open) MCR218−2 MCR218−4 MCR218−6 VDRM, VRRM 200 400 V On-State RMS Current (180° Conduction Angles; T C = 70°C) IT(RMS) 8.0 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) ITSM 100 A Circuit Fusing Considerations (t = 8.3 ms) I2t 26 A2s Forward Peak Gate Power (Pulse Width ≤ 1.0 /C0109s, TC = 70°C) PGM 5.0 W Forward Average Gate Power (t = 8.3 ms, TC = 70°C) PG(AV) 0.5 W Forward Peak Gate Current (Pulse Width ≤ 1.0 /C0109s, TC = 70°C) IGM 2.0 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. V DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SCRs

8 AMPERES RMS

ORDERING INFORMATION

MCR218−2 TO220AB 500 Units/Bulk MCR218−4 TO220AB MCR218−6 TO220AB

500 Units/Bulk

C G A TO−220AB CASE 221A−07 STYLE 3 2 3 http://onsemi.com MARKING DIAGRAM A = Assembly Location Y = Year WW = Work Week MCR218x = Device Code x = 2, 4 or 6 G = Pb−Free Package AKA = Diode Polarity MCR218−2G TO220AB (Pb−Free) MCR218−4G TO220AB (Pb−Free) MCR218−6G TO220AB (Pb−Free) Preferred devices are recommended choices for future use and best overall value. AY WW MCR218x−G AKA

MCR218−2, MCR218−4, MCR218−6 http://onsemi.com THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case R/C0113JC 2.0 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) T J = 25°C TJ = 125°C IDRM, IRRM 2.0 /C0109A mA ON CHARACTERISTICS Peak Forward On-State Voltage (Note 2) (ITM = 16 A Peak) VTM − 1.5 1.8 V Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ohms) IGT − 10 25 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ohms) VGT − − 1.5 V Gate Non−Trigger Voltage (Rated 12 V, RL = 100 Ohms, TJ = 125°C) VGD 0.2 − − V Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) IH − 16 30 mA DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt − 100 − V//C0109s 2. Pulse Test: Pulse Width = 1.0 ms, Duty Cycle ≤ 2%. + Current + Voltage VTM IDRM at VDRM IH Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current Voltage Current Characteristic of SCR Anode + on state Reverse Blocking Region (off state) Reverse Avalanche Region Anode − Forward Blocking Region IRRM at VRRM (off state)

MCR218−2, MCR218−4, MCR218−6 http://onsemi.com PACKAGE DIMENSIONS TO−220AB CASE 221A−07 ISSUE AA STYLE 3: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 A K L V G D N Z H Q FB 123 −T− SEATING PLANE S R J U T C ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 MCR218/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.