MCR100 DIGITRON | Alldatasheet

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phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130109 MCR100 SERIES SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive off-state voltage(1) (TJ = -40 to +110°C, sine wave, 50 to 60Hz, gate open) MCR100-3 MCR100-4 MCR100-5 MCR100-6 MCR100-7 MCR100-8 V DRM VRRM 100 200 300 400 500 600 V On-state RMS current (180° conduction angles, TC = 80°C) IT(RMS) 0.8 A Peak non-repetitive surge current (half-cycle, sine wave, 60Hz, T J = 25°C) ITSM 10 A Circuit fusing consideration (t = 8.3ms) I2t 0.415 A2s Forward peak gate power (pulse width ≤ 1.0µs, TA = 25°C) PGM 0.1 W Forward average gate power (t = 8.3ms, TA = 25°C) PG(AV) 0.10 W Forward peak gate current (pulse width ≤ 1.0µs, TA = 25°C) IGM 1.0 A Reverse peak gate voltage (pulse width ≤ 1.0µs, TA = 25°C) VGRM 5.0 V Operating junction temperature range @ rated VRRM and VDRM TJ -40 to +110 °C Storage temperature range Tstg -40 to +150 °C Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case RӨJC 75 °C/W Thermal resistance, junction to ambient RӨJA 200 °C/W Lead solder temperature (lead length < 1/16” from case, 10s max) T L 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak forward or reverse blocking current(2) (VAK = Rated VDRM or VRRM, RGK = 1kΩ) TC = 25°C TC = 110°C IDRM, IRRM 100 µA ON CHARACTERISTICS Peak forward on-state voltage* (ITM = 1.0A peak, @ TA = 25°C) VTM 1.7 V Gate trigger current (continuous dc)(3) (VAK = 7V, RL = 100Ω, TC = 25°C) IGT 200 µA Holding current (2) (VAK = 7V, initiating current = 20mA) TC = 25°C TC = -40°C IH 0.5 5.0 mA Latch current (VAK = 7V, Ig = 200µA) TC = 25°C TC = -40°C IL 0.6 mA

phone +1.908.245-7200 MCR100 SERIES SILICON CONTROLLED RECTIFIERS Characteristic Symbol Min Typ Max Unit Gate trigger voltage (continuous dc) (3) (VAK = 7V, RL = 100Ω) TC = 25°C TC = -40°C VGT 0.62 0.8 1.2 V DYNAMIC CHARACTERISTICS Critical rate of rise of off-state voltage D = rated VDRM, exponential waveform, RGK = 1000Ω, TJ = 110°C) dv/dt - V/µs Critical rate of rise of on-state current (IPK = 20A, PW = 10µsec, diG/dt = Igt = 20mA) di/dt

50 A/µs

Note 2: RGK = 1000Ω included in measurement. Note 3: Does not include RGK in measurement. * Pulse test: pulse width ≤ 1.0ms, duty cycle ≤ 1%. MECHANICAL CHARACTERISTICS Case TO-92 Marking Alpha-numeric Pin out See below fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130109

phone +1.908.245-7200 MCR100 SERIES SILICON CONTROLLED RECTIFIERS fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130109