MCR100 YENYO | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
0 . 8 A S C R s Sensitive Gate / Silicon Controlled Rectifiers Main features Symbol Value Unit IB T(RMS) 0.8A A VB DRM B/VB RRM 400 and 600 V I B GT(Q1) 200 uA
DESCRIPTION
These devices are intened to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Weight : 0.22 gram Absolute maximum ratings Symbol Parameter Value Unit IBT(RMS)B RMS on-state current ( 180° conduction angle ) 0.8 A F = 50Hz t = 10ms 7 IB TSM B Non repetitive surge on-state current ( 1/2 Cycle,Sine Wave , Tj initial=25℃ ) F = 60Hz t = 8.3ms 8 A IP Pt IP Pt Value for fusing t p = 10ms 0.24 A P Ps dl/dt Critical rate of rise of on-state current IB G B = 10mA di G = 0.1A/us 30 A/us IB GM B Peak gate current 1 A PB G(AV) B Average gate power dissipation 0.1 W T B stg TB j B Storage junction temperature range Operating junction temperature range -40 to +150 -40 to +110 ℃ Aprit.2008 Rev.1 1/5 A K G KGA TO92
Electrical characteristics (Tj = 25℃, unless otherwise specified) MCR100- Symbol Test conditions 6S 6 8 Unit VDRM,VRRM 400 400 600 V IBGTB(1) MAX. 25 200 200 uA VBGTB VBDB = 7V RL=100 ohm MAX. 0.8 V IH B(2) IT = 50 mA RGK =1kΩ MAX. 5 mA IL IG = 1mA R GK =1kΩ MAX. 10 mA dV/dt (2) VB D B= 67 % VB DRM B RGK =1Kω Tj = 110℃ MIN. 80 75 75 V/us Static characteristics Symbol Test conditions Value Unit VBTB (2) I TM = 1A tp = 380 us Tj = 25℃ MAX. 1.7 V Tj = 25℃ 10 uA IBDRMB IBRRMB VBDRMB=VBRRMB Tj = 110℃ MAX. 0.1 mA Thermal resistance Symbol Parameter Value Unit RBth (j-l)B Junction to lead for DC 80 ℃/W RBth (j-a)B Junction to ambient 150 ℃/W